scholarly journals Optimizing Solute–Water van der Waals Interactions To Reproduce Solvation Free Energies

2012 ◽  
Vol 116 (15) ◽  
pp. 4524-4534 ◽  
Author(s):  
Paul S. Nerenberg ◽  
Brian Jo ◽  
Clare So ◽  
Ajay Tripathy ◽  
Teresa Head-Gordon

1990 ◽  
Vol 45 (5) ◽  
pp. 430-435 ◽  
Author(s):  
Jonathan M. Keske ◽  
J. Malcolm Bruce ◽  
P. Leslie Dutton

Abstract A new method of analysis of the factor contributing to solvation of small molecules is described. Approximations of the energetic contributions to the entry of a molecule into water have been derived from partition coefficient data of solutes and selected derivatives from a multiplicity of solvents. These include taking separate account energy of the cost of introduction of a molecular cavity in water, the strength of solute-water dipolar interactions, and the strengths of hydrogen bond formation with water of the lone pairs and hydroxylic hydrogens associated with the molecule. In this report the solvation-free energies of benzoquinone and hydroquinone in water are described. We also consider the solvation of the sem iquinone anion and show it to be fundamentally different from that of either the quinone or hydroquinone; this is discussed as a potentiality for selective binding (“solvation”) of quinone, sem iquinone and hydroquinone in sites of redox catalysis such as those found in the photosynthetic reaction center.



2000 ◽  
Vol 65 (12) ◽  
pp. 1950-1958 ◽  
Author(s):  
Michal Hušák ◽  
Bohumil Kratochvíl ◽  
Ivana Císařová ◽  
Alexandr Jegorov

Two isomorphous clathrates formed by dihydrocyclosporin A or cyclosporin V with tert-butyl methyl ether are reported and compared with the structures of related P21-symmetry cyclosporin clathrates. The cyclosporin molecules in both structures are associated via van der Waals interactions forming cavities occupied by solvent molecules (cyclosporin : tert-butyl methyl ether is 1 : 2).



2005 ◽  
Vol 70 (11) ◽  
pp. 1769-1786 ◽  
Author(s):  
Luc A. Vannier ◽  
Chunxiang Yao ◽  
František Tureček

A computational study at correlated levels of theory is reported to address the structures and energetics of transient radicals produced by hydrogen atom abstraction from C-1, C-2, C-3, C-4, C-5, O-1, O-3, and O-5 positions in 2-deoxyribofuranose in the gas phase and in aqueous solution. In general, the carbon-centered radicals are found to be thermodynamically and kinetically more stable than the oxygen-centered ones. The most stable gas-phase radical, 2-deoxyribofuranos-5-yl (5), is produced by H-atom abstraction from C-5 and stabilized by an intramolecular hydrogen bond between the O-5 hydroxy group and O-1. The order of radical stabilities is altered in aqueous solution due to different solvation free energies. These prefer conformers that lack intramolecular hydrogen bonds and expose O-H bonds to the solvent. Carbon-centered deoxyribose radicals can undergo competitive dissociations by loss of H atoms, OH radical, or by ring cleavages that all require threshold dissociation or transition state energies >100 kJ mol-1. This points to largely non-specific dissociations of 2-deoxyribose radicals when produced by exothermic hydrogen atom abstraction from the saccharide molecule. Oxygen-centered 2-deoxyribose radicals show only marginal thermodynamic and kinetic stability and are expected to readily fragment upon formation.



2021 ◽  
Vol 154 (12) ◽  
pp. 124306
Author(s):  
Tao Lu ◽  
Daniel A. Obenchain ◽  
Jiaqi Zhang ◽  
Jens-Uwe Grabow ◽  
Gang Feng


2021 ◽  
Vol 418 ◽  
pp. 129307
Author(s):  
Florence H. Vermeire ◽  
William H. Green


2021 ◽  
Vol 8 (1) ◽  
Author(s):  
Woonbae Sohn ◽  
Ki Chang Kwon ◽  
Jun Min Suh ◽  
Tae Hyung Lee ◽  
Kwang Chul Roh ◽  
...  

AbstractTwo-dimensional MoS2 film can grow on oxide substrates including Al2O3 and SiO2. However, it cannot grow usually on non-oxide substrates such as a bare Si wafer using chemical vapor deposition. To address this issue, we prepared as-synthesized and transferred MoS2 (AS-MoS2 and TR-MoS2) films on SiO2/Si substrates and studied the effect of the SiO2 layer on the atomic and electronic structure of the MoS2 films using spherical aberration-corrected scanning transition electron microscopy (STEM) and electron energy loss spectroscopy (EELS). The interlayer distance between MoS2 layers film showed a change at the AS-MoS2/SiO2 interface, which is attributed to the formation of S–O chemical bonding at the interface, whereas the TR-MoS2/SiO2 interface showed only van der Waals interactions. Through STEM and EELS studies, we confirmed that there exists a bonding state in addition to the van der Waals force, which is the dominant interaction between MoS2 and SiO2. The formation of S–O bonding at the AS-MoS2/SiO2 interface layer suggests that the sulfur atoms at the termination layer in the MoS2 films are bonded to the oxygen atoms of the SiO2 layer during chemical vapor deposition. Our results indicate that the S–O bonding feature promotes the growth of MoS2 thin films on oxide growth templates.



2019 ◽  
Vol 3 (7) ◽  
pp. 1462-1470 ◽  
Author(s):  
Weiwei Wei ◽  
Rohit L. Vekariy ◽  
Chuanting You ◽  
Yafei He ◽  
Ping Liu ◽  
...  

Highly dense thin films assembled from cellulose nanofibers and reduced graphene oxide via van der Waals interactions to realize ultrahigh volumetric double-layer capacitances.



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