Electric-Field-Induced Second-Harmonic Generation Demonstrates Different Interface Properties of Molecular Beam Epitaxy Grown MgO on Si

2014 ◽  
Vol 118 (4) ◽  
pp. 1919-1924 ◽  
Author(s):  
Maarten K. Vanbel ◽  
Chen-Yi Su ◽  
Jean-Pierre Locquet ◽  
Thierry Verbiest
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electric Field ◽  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Molecular Beam ◽  
Second Harmonic ◽  
Interface Properties

scholarly journals Nonlinear optical diagnostics crystal structure of semiconductor films in molecular beam epitaxy

2021 ◽  
Keyword(s):  
Crystal Structure ◽  
Molecular Beam Epitaxy ◽  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Nonlinear Optical ◽  
Molecular Beam ◽  
Second Harmonic ◽  
Universal Method ◽  
Semiconductor Films ◽  
Control And Management

The main advantage of molecular beam epitaxy (MBE) is the control and management of the parameters of atomic and molecular fluxes, as well as the characteristics of growing layers during growth. A constructively simple and fairly universal method for diagnosing the struc-tural perfection of semiconductor films during their synthesis in an MBE device for second harmonic generation (SH) using a repetitively pulsed YAG: Nd laser is presented.

DC-electric-field-induced optical second harmonic generation at the smooth metal-electrolyte interface

1995 ◽  
Vol 336 (1-2) ◽  
pp. 225-231 ◽  
Author(s):  
O.A. Aktsipetrov ◽  
A.V. Melnikov ◽  
T.V. Murzina ◽  
A.A. Nikulin ◽  
A.N. Rubtsov
Keyword(s):  
Electric Field ◽  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Electrolyte Interface ◽  
Optical Second Harmonic Generation ◽  
Dc Electric Field
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