Atomic-scale surface control and second-harmonic generation in GdxY1−xCa4O(BO3)3 thin films grown by combinatorial laser molecular-beam epitaxy

2001 ◽  
Vol 79 (12) ◽  
pp. 1783-1785 ◽  
Author(s):  
T.-W. Kim ◽  
N. Arai ◽  
H. Koinuma ◽  
Y. Matsumoto ◽  
M. Yoshimura ◽  
...  
1997 ◽  
Vol 40 (5) ◽  
pp. 522-527 ◽  
Author(s):  
Huisheng Wang ◽  
Kun Ma ◽  
Yanwei Liu ◽  
Zhiqiang Peng ◽  
Dafu Cui ◽  
...  

The main advantage of molecular beam epitaxy (MBE) is the control and management of the parameters of atomic and molecular fluxes, as well as the characteristics of growing layers during growth. A constructively simple and fairly universal method for diagnosing the struc-tural perfection of semiconductor films during their synthesis in an MBE device for second harmonic generation (SH) using a repetitively pulsed YAG: Nd laser is presented.


1993 ◽  
Vol 29 (7) ◽  
pp. 981-986 ◽  
Author(s):  
G. S'heeren ◽  
A. Persoons ◽  
H. Bolink ◽  
M. Heylen ◽  
M. Van Beylen ◽  
...  

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