Optical second-harmonic generation of modulation doped Ga0.8Al0.2As film grown by molecular beam epitaxy

1988 ◽  
Vol 28 (4) ◽  
pp. 663

The main advantage of molecular beam epitaxy (MBE) is the control and management of the parameters of atomic and molecular fluxes, as well as the characteristics of growing layers during growth. A constructively simple and fairly universal method for diagnosing the struc-tural perfection of semiconductor films during their synthesis in an MBE device for second harmonic generation (SH) using a repetitively pulsed YAG: Nd laser is presented.


1988 ◽  
Vol 24 (6) ◽  
pp. 308 ◽  
Author(s):  
R.H. Tredgold ◽  
M.C.J. Young ◽  
R. Jones ◽  
P. Hodge ◽  
P. Kolinsky ◽  
...  

1995 ◽  
Vol 336 (1-2) ◽  
pp. 225-231 ◽  
Author(s):  
O.A. Aktsipetrov ◽  
A.V. Melnikov ◽  
T.V. Murzina ◽  
A.A. Nikulin ◽  
A.N. Rubtsov

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