scholarly journals Nonlinear optical diagnostics crystal structure of semiconductor films in molecular beam epitaxy

The main advantage of molecular beam epitaxy (MBE) is the control and management of the parameters of atomic and molecular fluxes, as well as the characteristics of growing layers during growth. A constructively simple and fairly universal method for diagnosing the struc-tural perfection of semiconductor films during their synthesis in an MBE device for second harmonic generation (SH) using a repetitively pulsed YAG: Nd laser is presented.

1999 ◽  
Vol 579 ◽  
Author(s):  
Sergey N. Rashkeev ◽  
Walter R. L. Lambrecht

ABSTRACTWe present our implementation of the length-gauge formalism of Sipe and coworkers (Phys. Rev. B 48, 11705 (1993); ibid 52, 14636 (1995)) using the linearized muffin-tin orbital (LMTO) method and discuss its application to the calculation of second order response functions. The importance of gap corrections beyond LDA is discussed. As primary application, we discuss the second harmonic generation (SHG) coefficients of the SiC polytypes and of the chalcopyrites of both the II-IV-V2 and I-III-VI2 families. These examples illustrate the relation of the second order response function to the modification of the crystal structure and chemical substitutions.


CrystEngComm ◽  
2020 ◽  
Vol 22 (20) ◽  
pp. 3526-3530 ◽  
Author(s):  
Yang Wang ◽  
Mengjia Luo ◽  
Pei Zhao ◽  
Xiangli Che ◽  
Yunzhen Cao ◽  
...  

The crystal structure and second-harmonic generation response of the new nonlinear optical material, Sr4Pb1.5Sb5O5Se8, were examined.


2016 ◽  
Vol 45 (25) ◽  
pp. 10459-10465 ◽  
Author(s):  
Sheng-Ping Guo ◽  
Yang Chi ◽  
Bin-Wen Liu ◽  
Guo-Cong Guo

A novel pentanary selenide (K3I)[InB12(InSe4)3] (P6322) features InSe4 tetrahedron consolidated B12 icosahedron and 1-D chain constructed by InSe6 octahedron and B12Se12 cluster. It is an indirect semiconductor with the energy gap of 1.15 eV and second harmonic generation-active.


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