Nonlinear optical diagnostics crystal structure of semiconductor films
in molecular beam epitaxy
Keyword(s):
The main advantage of molecular beam epitaxy (MBE) is the control and management of the parameters of atomic and molecular fluxes, as well as the characteristics of growing layers during growth. A constructively simple and fairly universal method for diagnosing the struc-tural perfection of semiconductor films during their synthesis in an MBE device for second harmonic generation (SH) using a repetitively pulsed YAG: Nd laser is presented.
2014 ◽
Vol 118
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pp. 1919-1924
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1997 ◽
Vol 107
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pp. 1687-1691
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1996 ◽
Vol 53
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pp. 12663-12665
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2004 ◽
Vol 22
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pp. 1558
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