Anisotropic second-harmonic generation of electric quadrupolar origin in copper phthalocyanine films epitaxially grown by molecular-beam epitaxy

1996 ◽  
Vol 53 (19) ◽  
pp. 12663-12665 ◽  
Author(s):  
Hajime Hoshi ◽  
Toshiki Yamada ◽  
Ken Ishikawa ◽  
Hideo Takezoe ◽  
Atsuo Fukuda

The main advantage of molecular beam epitaxy (MBE) is the control and management of the parameters of atomic and molecular fluxes, as well as the characteristics of growing layers during growth. A constructively simple and fairly universal method for diagnosing the struc-tural perfection of semiconductor films during their synthesis in an MBE device for second harmonic generation (SH) using a repetitively pulsed YAG: Nd laser is presented.


1993 ◽  
Vol 48 (19) ◽  
pp. 14488-14495 ◽  
Author(s):  
K. Kumagai ◽  
G. Mizutani ◽  
H. Tsukioka ◽  
T. Yamauchi ◽  
S. Ushioda

Sign in / Sign up

Export Citation Format

Share Document