Defect States below the Conduction Band Edge of HfO2 Grown on InP by Atomic Layer Deposition

2015 ◽  
Vol 119 (11) ◽  
pp. 6001-6008 ◽  
Author(s):  
Yu-Seon Kang ◽  
Dae-Kyoung Kim ◽  
Hang-Kyu Kang ◽  
Sangwan Cho ◽  
Sungho Choi ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Conduction Band ◽  
Atomic Layer ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Defect States ◽  
Layer Deposition

Determining the Conduction Band-Edge Potential of Solar-Cell-Relevant Nb2O5 Fabricated by Atomic Layer Deposition

Langmuir ◽  
2017 ◽  
Vol 33 (37) ◽  
pp. 9298-9306 ◽  
Author(s):  
William L. Hoffeditz ◽  
Michael J. Pellin ◽  
Omar K. Farha ◽  
Joseph T. Hupp
Keyword(s):  
Solar Cell ◽  
Atomic Layer Deposition ◽  
Conduction Band ◽  
Atomic Layer ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Layer Deposition

ALD Deposited Al2 O3 Films on 6H-SiC(0001) after Annealing in Hydrogen Atmosphere

2005 ◽  
Vol 483-485 ◽  
pp. 559-562 ◽  
Author(s):  
Kun Yuan Gao ◽  
Thomas Seyller ◽  
Konstantin V. Emtsev ◽  
Lothar Ley ◽  
Florin Ciobanu ◽  
...  
Keyword(s):  
Conduction Band ◽  
Photoelectron Spectroscopy ◽  
Depth Profiling ◽  
Atomic Layer ◽  
Hydrogen Atmosphere ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Strong Increase ◽  
Admittance Spectroscopy ◽  
Spectroscopy Measurement

Atomic Layer Deposited Al2O3 films on hydrogen-terminated 6H-SiC(0001) were annealed in hydrogen atmosphere and characterized by admittance spectroscopy measurement and photoelectron spectroscopy (PES). The resultant density of interface trap (Dit) from admittance spectroscopy measurement is reduced near mid gap, but increases strongly towards the conduction band edge. Systematic PES measurements show that hydrogen annealing introduces Si4+ as a new component besides Si0 and Si+. Using different electron escape depths for photon electrons, depth profiling of Si in its different oxidation states was performed. The result indicates the formation of a top SiO2 layer and a rougher interfacial layer containing more Si+ and Si4+ which could be responsible for the strong increase of Dit just below the conduction band edge.

Surface passivation of a photonic crystal band-edge laser by atomic layer deposition of SiO2and its application for biosensing

Nanoscale ◽  
2015 ◽  
Vol 7 (8) ◽  
pp. 3565-3571 ◽  
Author(s):  
Hyungrae Cha ◽  
Jeongkug Lee ◽  
Luke R. Jordan ◽  
Si Hoon Lee ◽  
Sang-Hyun Oh ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Atomic Layer Deposition ◽  
Surface Passivation ◽  
Atomic Layer ◽  
Band Edge ◽  
Layer Deposition

Engineering Band-Edge High-κ/Metal Gate n-MOSFETs with Cap Layers Containing Group IIA and IIIB Elements by Atomic Layer Deposition

2019 ◽  
Vol 19 (1) ◽  
pp. 253-261 ◽  
Author(s):  
Hemanth Jagannathan ◽  
Lisa F. Edge ◽  
Paul Jamison ◽  
Ryosuke Iijima ◽  
Vijay Narayanan ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Band Edge ◽  
Metal Gate ◽  
Layer Deposition

scholarly journals Enhanced band-edge photoluminescence from ZnO-passivated ZnO nanoflowers by atomic layer deposition

2013 ◽  
Vol 8 (1) ◽  
pp. 105 ◽  
Author(s):  
Zhi Wei Ai ◽  
Yun Wu ◽  
Hao Wu ◽  
Ti Wang ◽  
Chao Chen ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Band Edge ◽  
Layer Deposition

Enhanced Free Exciton and Direct Band-Edge Emissions at Room Temperature in Ultrathin ZnO Films Grown on Si Nanopillars by Atomic Layer Deposition

2011 ◽  
Vol 3 (11) ◽  
pp. 4415-4419 ◽  
Author(s):  
Yuan-Ming Chang ◽  
Jiann Shieh ◽  
Pei-Yuan Chu ◽  
Hsin-Yi Lee ◽  
Chih-Ming Lin ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Free Exciton ◽  
Atomic Layer ◽  
Band Edge ◽  
Zno Films ◽  
Layer Deposition ◽  
Direct Band
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