Design and Fabrication of Three-Dimensional Chiral Nanostructures Based on Stepwise Glancing Angle Deposition Technology

Langmuir ◽  
2013 ◽  
Vol 29 (3) ◽  
pp. 867-872 ◽  
Author(s):  
Yidong Hou ◽  
Shuhong Li ◽  
Yarong Su ◽  
Xia Huang ◽  
Yu Liu ◽  
...  
2000 ◽  
Vol 616 ◽  
Author(s):  
T. Smy ◽  
D. Vick ◽  
M. J. Brett ◽  
S. K. Dew ◽  
A. T. Wu ◽  
...  

AbstractA new fully three dimensional (3D) ballistic deposition simulator 3D-FILMS has been developed for the modeling of thin film deposition and structure. The simulator may be implemented using the memory resources available to workstations. In order to illustrate the capabilities of 3D-FILMS, we apply it to the growth of engineered porous thin films produced by the technique of GLancing Angle Deposition (GLAD).


2019 ◽  
Vol 8 (2) ◽  
pp. 305-315
Author(s):  
Tobias Ott ◽  
Diego Roldán ◽  
Claudia Redenbach ◽  
Katja Schladitz ◽  
Michael Godehardt ◽  
...  

Abstract. Thin tantalum films generated by glancing angle deposition serve as functional optical layers, for instance as absorption layers for ultrathin infrared sensors. They consist of nano-rods whose dimensions and distribution influence the optical properties of the thin film. Serial sectioning by a focused ion beam combined with scanning electron microscopy of the slices generates stacks of highly resolved images of this nanostructure. Dedicated image processing reconstructs the spatial structure from this stack such that 3-D image analysis yields geometric information that can be related to the optical performance.


2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Lung-Chien Chen ◽  
Ching-Ho Tien ◽  
Liu Xuguang ◽  
Xu Bingshe

This study investigates an aluminum nitride (AlN) nanorod structure sputtered by glancing angle deposition (GLAD) and its application as a buffer layer for GaN-based light-emitting diodes (LEDs) that are fabricated on sapphire substrates. The ray tracing method is adopted with a three-dimensional model in TracePro software. Simulation results indicate that the zigzag AlN nanorod structure is an optimal buffer layer in a GaN-based LED. Furthermore, the light output power of a GaN-based LED with a zigzag AlN nanorod structure improves to as much as 28.6% at a forward current of 20 mA over that of the GaN-based LED with a normal AlN buffer layer.


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