scholarly journals Tunable rainbow light trapping in ultrathin resonator arrays

2020 ◽  
Vol 9 (1) ◽  
Author(s):  
Katelyn Dixon ◽  
Arthur O. Montazeri ◽  
Moein Shayegannia ◽  
Edward S. Barnard ◽  
Stefano Cabrini ◽  
...  

AbstractRainbow light trapping in plasmonic devices allows for field enhancement of multiple wavelengths within a single device. However, many of these devices lack precise control over spatial and spectral enhancement profiles and cannot provide extremely high localised field strengths. Here we present a versatile, analytical design paradigm for rainbow trapping in nanogroove arrays by utilising both the groove-width and groove-length as tuning parameters. We couple this design technique with fabrication through multilayer thin-film deposition and focused ion beam milling, which enables the realisation of unprecedented feature sizes down to 5 nm and corresponding extreme normalised local field enhancements up to 103. We demonstrate rainbow trapping within the devices through hyperspectral microscopy and show agreement between the experimental results and simulation. The combination of expeditious design and precise fabrication underpins the implementation of these nanogroove arrays for manifold applications in sensing and nanoscale optics.

2008 ◽  
Vol 10 (7) ◽  
pp. 941-949 ◽  
Author(s):  
Jun-Sik Cho ◽  
Younggun Han ◽  
Jerome J. Cuomo

1993 ◽  
Vol 316 ◽  
Author(s):  
BERTILO E. KEMPF

ABSTRACTTitanium metal is sputtered by ion beams using a Kaufman-type ion source with carbondioxide as working gas. Deposition takes place on watercooled substrates of silicon and InP. The films obtained are amorphous; they adhere excellently. SEM-pictures reveal a featureless dense fracture and a smooth surface. Despite a carbon content of 9 at % the films are highly transparent in the visible and near infrared wavelength range. Refractive indices center around 2.15 at values typically found for amorphous TiO2. The electrical properties are characterized by dielectric constant of ε = 26 ± 3, leakage current densities at breakdown of jL = 3.65 . 10-3 A/cm2 and breakdown fields EB > 1 MeV/cm.


2000 ◽  
Vol 28 (5) ◽  
pp. 1545-1548 ◽  
Author(s):  
T. Sonegawa ◽  
K. Ohtomo ◽  
Weihua Jiang ◽  
K. Yatsui

2020 ◽  
Vol 38 (6) ◽  
pp. 063412
Author(s):  
Martin Becker ◽  
Sebastian L. Benz ◽  
Limei Chen ◽  
Angelika Polity ◽  
Peter J. Klar ◽  
...  

2012 ◽  
Vol 157-158 ◽  
pp. 1320-1323
Author(s):  
Branko Škorić ◽  
D. Kakaš ◽  
G. Favato ◽  
A. Miletić ◽  
M. Arsenovic

In this paper, we present the results of a study of TiN thin films which are deposited by a Physical Vapour Deposition (PVD) and Ion Beam Assisted Deposition (IBAD). In the present investigation the subsequent ion implantation was provided with N2+ ions. The ion implantation was applied to enhance the mechanical properties of surface. The thin film deposition process exerts a number of effects such as crystallographic orientation, morphology, topography, densification of the films.. A variety of analytic techniques were used for characterization, such as scratch test, calo test, Scanning electron microscopy (SEM), Atomic Force Microscope (AFM), X-ray diffraction (XRD) and Energy Dispersive X-ray analysis (EDAX).


1990 ◽  
Vol 41 (3) ◽  
pp. 259-267 ◽  
Author(s):  
Reese Puckett ◽  
Lawrence Stelmack ◽  
Stephen Michel ◽  
Michael J. O'Connell ◽  
Paul Natishan

Author(s):  
Tatsuya Fujii ◽  
Takahiro Namazu ◽  
Koichi Sudoh ◽  
Shouichi Sakakihara ◽  
Shozo Inoue

In this paper, the effect of surface damage induced by focused ion beam (FIB) fabrication on the mechanical properties of silicon (Si) nanowires (NWs) was investigated. Uniaxial tensile testing of the NWs was performed using a reusable on-chip tensile test device with 1000 pairs of comb structures working as an electrostatic force actuator, a capacitive displacement sensor, and a force sensor. Si NWs were made from silicon-on-nothing (SON) membranes that were produced by deep reactive ion etching hole fabrication and ultrahigh vacuum annealing. Micro probe manipulation and film deposition functions in a FIB system were used to bond SON membranes to the device's sample stage and then to directly fabricate Si NWs on the device. All the NWs showed brittle fracture in ambient air. The Young's modulus of 57 nm-wide NW was 107.4 GPa, which was increased to 144.2 GPa with increasing the width to 221 nm. The fracture strength ranged from 3.9 GPa to 7.3 GPa. By assuming the thickness of FIB-induced damage layer, the Young's modulus of the layer was estimated to be 96.2 GPa, which was in good agreement with the literature value for amorphous Si.


2001 ◽  
Vol 40 (Part 1, No. 2B) ◽  
pp. 1026-1029 ◽  
Author(s):  
Weihua Jiang ◽  
Koji Ide ◽  
Shinji Kitayama ◽  
Tsuneo Suzuki ◽  
Kiyoshi Yatsui

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