scholarly journals Room temperature and low-field resonant enhancement of spin Seebeck effect in partially compensated magnets

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
R. Ramos ◽  
T. Hioki ◽  
Y. Hashimoto ◽  
T. Kikkawa ◽  
P. Frey ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Room Temperature ◽  
Seebeck Effect ◽  
Chemical Doping ◽  
Resonant Enhancement ◽  
Spintronic Devices ◽  
Spin Seebeck Effect ◽  
Potential Applications ◽  
Order Of Magnitude ◽  
Magnetic Ion

AbstractResonant enhancement of spin Seebeck effect (SSE) due to phonons was recently discovered in Y$${}_{3}$$3Fe$${}_{5}$$5O$${}_{12}$$12 (YIG). This effect is explained by hybridization between the magnon and phonon dispersions. However, this effect was observed at low temperatures and high magnetic fields, limiting the scope for applications. Here we report observation of phonon-resonant enhancement of SSE at room temperature and low magnetic field. We observe in Lu$${}_{2}$$2BiFe$${}_{4}$$4GaO$${}_{12}$$12 an enhancement 700% greater than that in a YIG film and at very low magnetic fields around 10$${}^{-1}$$−1 T, almost one order of magnitude lower than that of YIG. The result can be explained by the change in the magnon dispersion induced by magnetic compensation due to the presence of non-magnetic ion substitutions. Our study provides a way to tune the magnon response in a crystal by chemical doping, with potential applications for spintronic devices.

Seebeck and Spin Seebeck effect in Gd-doped GaN thin films for Thermoelectric Devices and Applications

2011 ◽  
Vol 1329 ◽  
Author(s):  
Bahadir Kucukgok ◽  
Liqin Su ◽  
Elisa N. Hurwitz ◽  
Andrew Melton ◽  
Liu Zhiqiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Power ◽  
Room Temperature ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Seebeck Effect ◽  
Ferromagnetic Behavior ◽  
Successful Development ◽  
Spintronic Devices ◽  
Spin Seebeck Effect

ABSTRACTGaN-based dilute magnetic semiconductors (DMS) have recently been investigated for use in spintronic devices. In particular, Gd-doped GaN has shown very promising room temperature ferromagnetic behavior and potential for use in spintronics applications. III-Nitride materials have recently had their thermoelectric properties investigated; however this work has not been extended to Nitride-based DMS. Understanding the spin-calorimetric characteristics of GaN-based DMS is important to the successful development of low-power spintronic devices. In this paper the Seebeck and spin-Seebeck effect in MOCVD grown Gd-doped GaN (Gd: GaN) are investigated.

scholarly journals Giant room temperature elastocaloric effect in metal-free thin-film perovskites

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Cheng Li ◽  
Yu Hui Huang ◽  
Jian-Jun Wang ◽  
Bo Wang ◽  
Yong Jun Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Room Temperature ◽  
Entropy Change ◽  
Stress Change ◽  
Chemical Doping ◽  
Metal Free ◽  
Organic Ferroelectrics ◽  
Potential Applications ◽  
Unit Stress

AbstractSolid-state refrigeration which is environmentally benign has attracted considerable attention. Mechanocaloric (mC) materials, in which the phase transitions can be induced by mechanical stresses, represent one of the most promising types of solid-state caloric materials. Herein, we have developed a thermodynamic phenomenological model and predicted extraordinarily large elastocaloric (eC) strengths for the (111)-oriented metal-free perovskite ferroelectric [MDABCO](NH4)I3 thin-films. The predicted room temperature isothermal eC ΔSeC/Δσ (eC entropy change under unit stress change) and adiabatic eC ΔTeC/Δσ (eC temperature change under unit stress change) for [MDABCO](NH4)I3 are −60.0 J K−1 kg−1 GPa−1 and 17.9 K GPa−1, respectively, which are 20 times higher than the traditional ferroelectric oxides such as BaTiO3 thin films. We have also demonstrated that the eC performance can be improved by reducing the Young’s modulus or enhancing the thermal expansion coefficient (which could be realized through chemical doping, etc.). We expect these discoveries to spur further interest in the potential applications of metal-free organic ferroelectrics materials towards next-generation eC refrigeration devices.

Spin Seebeck effect in the antiferromagnet nickel oxide at room temperature

2017 ◽  
Vol 111 (17) ◽  
pp. 172405 ◽  
Author(s):  
J. Holanda ◽  
D. S. Maior ◽  
O. Alves Santos ◽  
L. H. Vilela-Leão ◽  
J. B. S. Mendes ◽  
...  
Keyword(s):  
Nickel Oxide ◽  
Room Temperature ◽  
Seebeck Effect ◽  
Spin Seebeck Effect

scholarly journals Spin Seebeck effect and ballistic transport of quasi-acoustic magnons in room-temperature yttrium iron garnet films

2018 ◽  
Vol 51 (23) ◽  
pp. 234003 ◽  
Author(s):  
Timo B Noack ◽  
Halyna Yu Musiienko-Shmarova ◽  
Thomas Langner ◽  
Frank Heussner ◽  
Viktor Lauer ◽  
...  
Keyword(s):  
Yttrium Iron Garnet ◽  
Room Temperature ◽  
Ballistic Transport ◽  
Seebeck Effect ◽  
Yttrium Iron ◽  
Garnet Films ◽  
Spin Seebeck Effect ◽  
Iron Garnet

scholarly journals Electric detection of the spin-Seebeck effect in Ni and Fe thin films at room temperature

2010 ◽  
Vol 200 (6) ◽  
pp. 062020 ◽  
Author(s):  
T Ota ◽  
K Uchida ◽  
Y Kitamura ◽  
T Yoshino ◽  
H Nakayama ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Seebeck Effect ◽  
Spin Seebeck Effect ◽  
Electric Detection

scholarly journals Enhanced room-temperature spin Seebeck effect in a YIG/C60/Pt layered heterostructure

AIP Advances ◽  
2018 ◽  
Vol 8 (5) ◽  
pp. 055906 ◽  
Author(s):  
R. Das ◽  
V. Kalappattil ◽  
R. Geng ◽  
H. Luong ◽  
M. Pham ◽  
...  
Keyword(s):  
Room Temperature ◽  
Seebeck Effect ◽  
Spin Seebeck Effect

Coexistence of intrinsic room-temperature ferromagnetism and piezoelectricity in monolayer BiCrX3 (X = S, Se, Te)

2021 ◽  
Author(s):  
Guang Song ◽  
Chengfeng Zhang ◽  
Zhengzhong Zhang ◽  
Guannan Li ◽  
Zhongwen Li ◽  
...  
Keyword(s):  
Room Temperature ◽  
2D Materials ◽  
Room Temperature Ferromagnetism ◽  
Two Dimensional ◽  
Spintronic Devices ◽  
Potential Applications ◽  
Intrinsic Ferromagnetism

Two-dimensional (2D) materials with intrinsic ferromagnetism and piezoelectricity have received growing attention due to their potential applications in nanoscale spintronic devices. However, their applications are highly limited by the low...

Electric-Field-Control of Non-Volatile Magnetization Switching in Multiferroic CoFeB/(011)-PMN-PT Heterostructures

2016 ◽  
Vol 848 ◽  
pp. 675-681 ◽  
Author(s):  
Yuan Jun Yang ◽  
Bin Hong ◽  
Meng Meng Yang ◽  
Liang Xin Wang ◽  
Hao He ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Electric Field ◽  
Electric Fields ◽  
Room Temperature ◽  
Domain Switching ◽  
Magnetization Switching ◽  
Ultra Low Power ◽  
Spintronic Devices ◽  
Magnetic States ◽  
Pulse Electric

The giant converse magnetoelectric coupling (GME) was observed in the multiferroic Co40Fe40B20/(011)-0.7Pb (Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures at room temperature in this investigation. A tunability of magnetization by electric field along the [100] direction was up to-66.7% at-10 Oe bias magnetic fields. Moreover, the non-volatile magnetization switching was found after removal of bipolar electric field. The corresponding remanent magnetic states even without the assistance of bias magnetic fields were stable and could be modulated synchronously by a sequence of pulse electric fields. The 90o rotation of easy axis and non-symmetrical ferroelastic domain switching contributed to the above results. This work is of great significance in designing ultra-low power and non-volatile magnetoelectric memories and other spintronic devices at room temperature.

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