scholarly journals Giant voltage-induced modification of magnetism in micron-scale ferromagnetic metals by hydrogen charging

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Xinglong Ye ◽  
Harish K. Singh ◽  
Hongbin Zhang ◽  
Holger Geßwein ◽  
Mohammed Reda Chellali ◽  
...  

Abstract Owing to electric-field screening, the modification of magnetic properties in ferromagnetic metals by applying small voltages is restricted to a few atomic layers at the surface of metals. Bulk metallic systems usually do not exhibit any magneto-electric effect. Here, we report that the magnetic properties of micron-scale ferromagnetic metals can be modulated substantially through electrochemically-controlled insertion and extraction of hydrogen atoms in metal structure. By applying voltages of only ~ 1 V, we show that the coercivity of micrometer-sized SmCo5, as a bulk model material, can be reversibly adjusted by ~ 1 T, two orders of magnitudes larger than previously reported. Moreover, voltage-assisted magnetization reversal is demonstrated at room temperature. Our study opens up a way to control the magnetic properties in ferromagnetic metals beyond the electric-field screening length, paving its way towards practical use in magneto-electric actuation and voltage-assisted magnetic storage.

2021 ◽  
Vol 23 (10) ◽  
pp. 6171-6181
Author(s):  
Yaoqi Gao ◽  
Baozeng Zhou ◽  
Xiaocha Wang

It is found that the biaxial strain, electric field and interlayer distance can effectively modulate the electronic structure and magnetic properties of two-dimensional van der Waals heterostructures.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Huynh Anh Huy ◽  
Quoc Duy Ho ◽  
Truong Quoc Tuan ◽  
Ong Kim Le ◽  
Nguyen Le Hoai Phuong

AbstractUsing density functional theory (DFT), we performed theoretical investigation on structural, energetic, electronic, and magnetic properties of pure armchair silicene nanoribbons with edges terminated with hydrogen atoms (ASiNRs:H), and the absorptions of silicon (Si) atom(s) on the top of ASiNRs:H. The calculated results show that Si atoms prefer to adsorb on the top site of ASiNRs:H and form the single- and/or di-adatom defects depending on the numbers. Si absorption defect(s) change electronic and magnetic properties of ASiNRs:H. Depending on the adsorption site the band gap of ASiNRs:H can be larger or smaller. The largest band gap of 1 Si atom adsorption is 0.64 eV at site 3, the adsorption of 2 Si atoms has the largest band gap of 0.44 eV at site 1-D, while the adsorption at sites5 and 1-E turn into metallic. The formation energies of Si adsorption show that adatom defects in ASiNRs:H are more preferable than pure ASiNRs:H with silicon atom(s). 1 Si adsorption prefers to be added on the top site of a Si atom and form a single-adatom defect, while Si di-adatom defect has lower formation energy than the single-adatom and the most energetically favorable adsorption is at site 1-F. Si adsorption atoms break spin-degeneracy of ASiNRs:H lead to di-adatom defect at site 1-G has the highest spin moment. Our results suggest new ways to engineer the band gap and magnetic properties silicene materials.


2018 ◽  
Vol 459 ◽  
pp. 20-25
Author(s):  
Stanislav Y. Bobrovskii ◽  
Igor T. Iakubov ◽  
Andrei N. Lagarkov ◽  
Sergei A. Maklakov ◽  
Sergei S. Maklakov ◽  
...  

Author(s):  
Asadollah Bafekry ◽  
M. Faraji ◽  
Siavash Karbasizadeh ◽  
Abdolhosseini Sarsari Sarsari ◽  
Hamad R. Jappor ◽  
...  

Driven by the fabrication of bulk and monolayer FeTe2 ACS Nano 2020, 14, 9, 11473-11481], we explore the lattice, dynamical stability, electronic and magnetic properties of FeTeS and FeSeS Janus...


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