scholarly journals Hetero-site nucleation for growing twisted bilayer graphene with a wide range of twist angles

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Luzhao Sun ◽  
Zihao Wang ◽  
Yuechen Wang ◽  
Liang Zhao ◽  
Yanglizhi Li ◽  
...  
Keyword(s):  
Isotope Labeling ◽  
Twist Angle ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Large Area ◽  
High Quality ◽  
Nucleation Behavior ◽  
Practical Applications ◽  
Wide Range ◽  
Twisted Bilayer Graphene

AbstractTwisted bilayer graphene (tBLG) has recently attracted growing interest due to its unique twist-angle-dependent electronic properties. The preparation of high-quality large-area bilayer graphene with rich rotation angles would be important for the investigation of angle-dependent physics and applications, which, however, is still challenging. Here, we demonstrate a chemical vapor deposition (CVD) approach for growing high-quality tBLG using a hetero-site nucleation strategy, which enables the nucleation of the second layer at a different site from that of the first layer. The fraction of tBLGs in bilayer graphene domains with twist angles ranging from 0° to 30° was found to be improved to 88%, which is significantly higher than those reported previously. The hetero-site nucleation behavior was carefully investigated using an isotope-labeling technique. Furthermore, the clear Moiré patterns and ultrahigh room-temperature carrier mobility of 68,000 cm2 V−1 s−1 confirmed the high crystalline quality of our tBLG. Our study opens an avenue for the controllable growth of tBLGs for both fundamental research and practical applications.

Controllable and Rapid Synthesis of High-Quality and Large-Area Bernal Stacked Bilayer Graphene Using Chemical Vapor Deposition

2013 ◽  
Vol 26 (2) ◽  
pp. 907-915 ◽  
Author(s):  
Wei Liu ◽  
Stephan Kraemer ◽  
Deblina Sarkar ◽  
Hong Li ◽  
Pulickel M. Ajayan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Large Area ◽  
High Quality ◽  
Rapid Synthesis

scholarly journals High-Yield Chemical Vapor Deposition Growth of High-Quality Large-Area AB-Stacked Bilayer Graphene

ACS Nano ◽  
2012 ◽  
Vol 6 (9) ◽  
pp. 8241-8249 ◽  
Author(s):  
Lixin Liu ◽  
Hailong Zhou ◽  
Rui Cheng ◽  
Woo Jong Yu ◽  
Yuan Liu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
High Yield ◽  
Large Area ◽  
High Quality ◽  
Chemical Vapor Deposition Growth

scholarly journals Practical Route for the Low-Temperature Growth of Large-Area Bilayer Graphene on Polycrystalline Nickel by Cold-Wall Chemical Vapor Deposition

ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Cold Wall ◽  
Polycrystalline Nickel ◽  
Large Area ◽  
Temperature Growth ◽  
Low Temperature Growth

Diamond Films: Recent Developments

MRS Bulletin ◽  
1998 ◽  
Vol 23 (9) ◽  
pp. 16-21 ◽  
Author(s):  
Dieter M. Gruen ◽  
Ian Buckley-Golder
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Nuclear Power ◽  
Large Scale ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Large Area ◽  
Technical Problems ◽  
Practical Applications ◽  
Single Crystal Diamond

Carbon in the form of diamond is the stuff of dreams, and the image of the diamond evokes deep and powerful emotions in humans. Following the successful synthesis of diamond by high-pressure methods in the 1950s, the startling development of the low-pressure synthesis of diamond films in the 1970s and 1980s almost immediately engendered great expectations of utility. The many remarkable properties of diamond due in part to its being the most atomically dense material in the universe (hardness, thermal conductivity, friction coefficient, transparency, etc.) could at last be put to use in a multitude of practical applications. “The holy grail”—it was realized early on—would be the development of large-area, doped, single-crystal diamond wafers for the fabrication of high-temperature, extremely fast integrated circuits leading to a revolution in computer technology.Excitement in the community of chemical-vapor-deposition (CVD) diamond researchers, funding agencies, and industrial companies ran high in expectation of early realization for many of the commercial goals that had been envisioned: tool, optical, and corrosion-resistant coatings; flat-panel displays; thermomanagement for electronic components, etc. Market projection predicting diamond-film sales in the billions of dollars by the year 2000 was commonplace. Hopes were dashed when these optimistic predictions ran up against the enormous scientific and technical problems that had to be overcome in order for those involved to fully exploit the potential of diamond. This experience is not new to the scientific community. One need only remind oneself of the hopes for cheap nuclear power or for high-temperature superconducting wires available at hardware stores to realize that the lag between scientific discoveries and their large-scale applications can be very long. Diamond films are in fact being used today in commercial applications.

scholarly journals Electronic Properties of Twisted Bilayer Graphene in the Presence of a Magnetic Field

2020 ◽  
Vol 233 ◽  
pp. 03004
Author(s):  
M.F.C. Martins Quintela ◽  
J.C.C. Guerra ◽  
S.M. João
Keyword(s):  
Magnetic Field ◽  
Electronic Properties ◽  
Twist Angle ◽  
Bilayer Graphene ◽  
Polynomial Method ◽  
Zero Energy ◽  
Energy Bands ◽  
Optical And Electronic Properties ◽  
Twisted Bilayer Graphene ◽  
Kernel Polynomial Method

In AA-stacked twisted bilayer graphene, the lower energy bands become completely flat when the twist angle passes through certain specific values: the so-called “magic angles”. The Dirac peak appears at zero energy due to the flattening of these bands when the twist angle is sufficiently small [1-3]. When a constant perpendicular magnetic field is applied, Landau levels start appearing as expected [5]. We used the Kernel Polynomial Method (KPM) [6] as implemented in KITE [7] to study the optical and electronic properties of these systems. The aim of this work is to analyze how the features of these quantities change with the twist angle in the presence of an uniform magnetic field.

scholarly journals Direct growth of mm-size twisted bilayer graphene by plasma-enhanced chemical vapor deposition

Carbon ◽  
2020 ◽  
Vol 156 ◽  
pp. 212-224
Author(s):  
Yen-Chun Chen ◽  
Wei-Hsiang Lin ◽  
Wei-Shiuan Tseng ◽  
Chien-Chang Chen ◽  
George.R. Rossman ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Direct Growth ◽  
Twisted Bilayer Graphene

scholarly journals 30°-Twisted Bilayer Graphene Quasicrystals from Chemical Vapor Deposition

Nano Letters ◽  
2020 ◽  
Vol 20 (5) ◽  
pp. 3313-3319 ◽  
Author(s):  
Sergio Pezzini ◽  
Vaidotas Mišeikis ◽  
Giulia Piccinini ◽  
Stiven Forti ◽  
Simona Pace ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bilayer Graphene ◽  
Twisted Bilayer Graphene
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