scholarly journals Continuous strengthening in nanotwinned diamond

2019 ◽  
Vol 5 (1) ◽  
Author(s):  
Bin Wen ◽  
Bo Xu ◽  
Yanbin Wang ◽  
Guoying Gao ◽  
Xiang-Feng Zhou ◽  
...  

AbstractStrengths of nanograined (ng) and nanotwinned (nt) metals increase with decreasing grain size and twin thickness, respectively, until reaching a critical value, below which strength decreases. This behavior is known as the reverse Hall–Petch effect (RHPE), which has also been observed in nanograined cubic boron nitride (cBN) and diamond. Surprisingly, however, hardness of nt-cBN and nt-diamond increases continuously with decreasing twin thickness down to several nanometers, suggesting the absence of RHPE in these covalent materials. The mechanism responsible for such a behavior remains controversial. Here we investigate the strengthening mechanisms in ng- and nt-diamond using molecular dynamics and first-principles calculations. For ng-diamond, the competition between shuffle-set dislocation (SSD) and grain boundary atom motions gives rise to RHPE. For nt-diamond, SSDs remain dominant but their slips along twin boundaries energetically show no advantage over those along other slip planes. Twin domains are locked and mechanically stable, resisting SSD propagation and inhibiting RHPE. These findings provide new insights into the hardening mechanism of nanotwinned covalent materials.

2019 ◽  
Vol 04 (02) ◽  
pp. 1950002 ◽  
Author(s):  
Ivan P. Lobzenko

Properties of discrete breathers are discussed from two points of view: (I) the ab initio modeling in graphene and (II) classical molecular dynamics simulations in the ace-centered cubic (fcc) Ni. In the first (I) approach, the possibility of exciting breathers depends on the strain applied to the graphene sheet. The uniaxial strain leads to opening the gap in the phonon band and, therefore, the existence of breathers with frequencies within the gap. In the second (II) approach, the structure of fcc Ni supports breathers of another kind, which possess a hard nonlinearity type. It is shown that particular high frequency normal mode can be used to construct the breather by means of overlaying a spherically symmetrical function, the maximum of which coincides with the breather core. The approach of breathers excitation based on nonlinear normal modes is independent of the level of approximation. Even though breathers could be obtained both in classical and first-principles calculations, each case has advantages and shortcomings, that are compared in the present work.


2009 ◽  
Vol 1224 ◽  
Author(s):  
Yunjiang Wang ◽  
Chongyu Wang

AbstractThe effect of alloying elements Ta, Mo, W, Cr, Re, Ru, Co, and Ir on the elastic properties of both γ-Ni and γ′-Ni3Al is studied by first-principles method. Results for lattice properties, elastic moduli and the ductile/brittle behaviors are all presented. Our calculated values agree well with the existing experimental observations. Results show all the additions decrease the lattice misfit between and γ′ phases. Different alloying elements are found to have different effect on the elastic moduli of γ-Ni. Whereas all the alloying elements slightly increase the moduli of γ′-Ni3Al expect Co. Both of the two phases are becoming more brittle with alloying elements, but Co is excepted. The electronic structures of γ′ phase alloyed with different elements are provided as example to elucidate the different strengthening mechanisms.


1993 ◽  
Vol 321 ◽  
Author(s):  
C. Molteni ◽  
L. Colombo ◽  
L. Miglio

ABSTRACTWe investigate the short-range structural properties of a-GaAs as obtained in a computer experiment based on a tight-binding molecular dynamics simulation. The amorphous configuration is obtained by quenching a liquid sample well equilibrated at T=1600 K. A detailed characterization of the topology and defect distribution of the amorphous network is presented and discussed. The electronic structure of our sample is calculated as well. Finally, we discuss the reliability and transferability of the present computational scheme for large-scale simulations of compound semiconductor materials by comparing our results to first-principles calculations.


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