Impact of growth rate on graphene lattice-defect formation within a single crystalline domain

The mechanism of preferential nucleation of [1{\overline 1}0{\overline 3}]-oriented GaN faceted twins on an SiO2-patternedm-plane sapphire substrate was investigated. Each variant of twins, which were enclosed byc- andm-facets, was observed to be preferentially nucleated over the opposite sides of an SiO2pattern. It was hypothesized, from the fact that the same method of Legendre transformation is applied to a Wulff plot and a kinetic Wulff plot to determine the growth morphology of a crystalline domain, that theeffectivesurface energy ofc- andm-facets would be proportional to the growth rate of the respective facet. On the basis of this hypothesis, minimization of the effective surface energy of a nucleated domain was proposed as a mechanism of preferential nucleation. This proposed mechanism successfully explained the preferential nucleation behaviour.

Download Full-text

OS2204 Enhanced Lattice Defect Formation Associated with Hydrogen and Hydrogen Embrittlement under Elastic Stress of High-Strength Steel

The Proceedings of the Materials and Mechanics Conference ◽

10.1299/jsmemm.2011._os2204-1_ ◽

2011 ◽

Vol 2011 (0) ◽

pp. _OS2204-1_-_OS2204-2_

Author(s):

Tomoki DOSHIDA ◽

Hiroshi SUZUKI ◽

Kenichi TAKAI ◽

Yukito HAGIHARA

Keyword(s):

Hydrogen Embrittlement ◽

High Strength Steel ◽

Defect Formation ◽

Elastic Stress ◽

Lattice Defect ◽

High Strength

Download Full-text

Enhanced Lattice Defect Formation Associated with Hydrogen and Hydrogen Embrittlement under Elastic Stress of a Tempered Martensitic Steel

Tetsu-to-Hagane ◽

10.2355/tetsutohagane.98.197 ◽

2012 ◽

Vol 98 (5) ◽

pp. 197-206 ◽

Cited By ~ 4

Author(s):

Tomoki Doshida ◽

Hiroshi Suzuki ◽

Kenichi Takai ◽

Nagayasu Oshima ◽

Tetsuya Hirade

Keyword(s):

Hydrogen Embrittlement ◽

Defect Formation ◽

Elastic Stress ◽

Martensitic Steel ◽

Lattice Defect

Download Full-text

Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane

Materials Science Forum ◽

10.4028/www.scientific.net/msf.645-648.147 ◽

2010 ◽

Vol 645-648 ◽

pp. 147-150 ◽

Cited By ~ 2

Author(s):

Eiji Saito ◽

Sergey Filimonov ◽

Maki Suemitsu

Keyword(s):

Growth Rate ◽

Low Temperature ◽

Temperature Dependence ◽

Growth Temperature ◽

High Rate ◽

Si Substrate ◽

Single Crystalline ◽

Step Process ◽

Si Substrates ◽

Sic Film

Temperature dependence of the growth rate of 3C-SiC(001) films on Si(001) substrates during ultralow-pressure (ULP: ~10-1 Pa) CVD using monomethylsilane has been investigated in detail by using pyrometric interferometry. A novel behavior, i.e. a sharp division of the growth mode into two regimes depending on the growth temperature, has been found to exist. Based on this finding, we have developed a two-step process, which realizes a low-temperature (900 °C), high-rate growth of single-crystalline 3C-SiC film on Si substrates, whose rate of 3 m/h is extremely high for this ULP process.

Download Full-text