Low-Temperature, Low-Pressure and Ultrahigh-Rate Growth of Single-Crystalline 3C-SiC on Si Substrate by ULP-CVD Using Organosilane

2010 ◽  
Vol 645-648 ◽  
pp. 147-150 ◽  
Author(s):  
Eiji Saito ◽  
Sergey Filimonov ◽  
Maki Suemitsu
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Growth Temperature ◽  
High Rate ◽  
Si Substrate ◽  
Single Crystalline ◽  
Step Process ◽  
Si Substrates ◽  
Sic Film

Temperature dependence of the growth rate of 3C-SiC(001) films on Si(001) substrates during ultralow-pressure (ULP: ~10-1 Pa) CVD using monomethylsilane has been investigated in detail by using pyrometric interferometry. A novel behavior, i.e. a sharp division of the growth mode into two regimes depending on the growth temperature, has been found to exist. Based on this finding, we have developed a two-step process, which realizes a low-temperature (900 °C), high-rate growth of single-crystalline 3C-SiC film on Si substrates, whose rate of 3 m/h is extremely high for this ULP process.

High-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Silicon

2013 ◽  
Vol 740-742 ◽  
pp. 327-330 ◽  
Author(s):  
Maki Suemitsu ◽  
Shota Sanbonsuge ◽  
Eiji Saito ◽  
Myung Ho Jung ◽  
Hirokazu Fukidome ◽  
...  
Keyword(s):  
Epitaxial Graphene ◽  
The Other ◽  
High Rate ◽  
Si Substrate ◽  
High Quality ◽  
Si Substrates ◽  
Growth Method ◽  
Step Growth ◽  
Sic Film ◽  
Sic Films

In the formation of epitaxial graphene on Si substrates, the growth of high-quality 3C-SiC thin films on Si substrates is a key to success. As a solution to the large mismatch between the Si substrate and the 3C-SiC film, rotated epitaxy in which 3C-SiC(111) films are grown on Si(110) substrates is quite attractive. In some applications, on the other hand, a certatin thickness (~100 nm or more) is required for this 3C-SiC films as well. A two-step growth method has been thus developed to realize a high-rate, qualified rotated epitaxy. A qualified graphene is found to be formed on this rotated epi-film, as typified by the increase of the grain size by a factor of 1.6 from the non-rotated epitaxy.

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

2008 ◽  
Vol 600-603 ◽  
pp. 251-254 ◽  
Author(s):  
Yong Mei Zhao ◽  
Guo Sheng Sun ◽  
Xing Fang Liu ◽  
Jia Ye Li ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Si Substrate ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Aln Film ◽  
Pressure Chemical ◽  
Aln Buffer ◽  
Sic Film

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

scholarly journals Characterization of Gaas/Si/GaAs Heterointerfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
Raymond P. Mariella
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Defect Density ◽  
Si Substrate ◽  
Reverse Polarity ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Semiconductor Metal

ABSTRACTTransmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates. It is shown that the GaAs epitaxial layer grown on thin Si layer has reverse polarity to the substrate (antiphase relation). Higher defect density is observed for GaAs grown on Si substrate. This higher defect density correlates with an increased device speed, but with reduced sensitivity.

Structural Characterization of Heteroepitaxial 3C-SiC

2012 ◽  
Vol 711 ◽  
pp. 27-30 ◽  
Author(s):  
Andrea Severino ◽  
Ruggero Anzalone ◽  
Massimo Camarda ◽  
Nicolò Piluso ◽  
Francesco La Via
Keyword(s):  
Growth Rate ◽  
Film Structure ◽  
Material Structure ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Transmission Electron ◽  
Crystallographic Defects ◽  
Sic Film ◽  
Sic Films

In this work, we focus our attention on the characterization of 3C-SiC films, grown within a CVD reactor, on Si substrates. It will be shown how the growth procedures influence the SiC film structure and quality with the growth rate used during the growth used as example. Evaluation of crystal structure has been conducted by X-Ray Diffraction (XRD), Raman microscopy and Transmission Electron Microscopy (TEM). Overall film quality increases if films are grown under low growth rate conditions, thanks also to an important reduction in the density of micro-twins. The trend of the full widths at half maximum (FWHMs) of SiC rocking curves, considered good ‘quality indicator’ as their broadenings are affected by crystallographic defects, as a function of 3C-SiC thickness shows a saturated regime for very thick films, due to the saturation of stacking fault density after 50 μm of growth. This work wants to suggest a reasonable path for the characterization of the material structure that can be useful, anywhere and in any time, to assess if the morphology and microstructure of our films are satisfactory and to drive towards the desired improvement.

1.54μm luminescence of β-FeSi2 grown on Au-coated Si substrates

2012 ◽  
Vol 1396 ◽  
Author(s):  
Kensuke Akiyama ◽  
Hiroshi Funakubo ◽  
Masaru Itakura
Keyword(s):  
Temperature Dependence ◽  
Radiative Recombination ◽  
Recombination Center ◽  
Quality Level ◽  
Nonradiative Recombination ◽  
Si Substrate ◽  
High Quality ◽  
Nonradiative Recombination Center ◽  
Si Substrates ◽  
Photoluminescence Peak

ABSTRACTA clear PL spectrum was observed from β-FeSi2 grains on gold (Au)-coated (100)Si substrates, and indicated the formation of crystal with the same high quality level as the β-FeSi2 on a copper (Cu)-coated Si substrate. Moreover, the temperature dependence of photoluminescence peak intensities showed lower density of the nonradiative recombination center in β-FeSi2 grains on Au-coated Si substrates than that of β-FeSi2 film on Cu-coated Si. Au was not detected in β-FeSi2 grains by STEM-EDX observation, while Cu was observed in the grains and grain boundaries of β-FeSi2 and rolled as non-radiative recombination center.

REPLIES TO FORUM: INSECTS AND TEMPERATURE—SOME COMMENTS ON A GENERAL THEORY

1998 ◽  
Vol 130 (1) ◽  
pp. 111-114 ◽  
Author(s):  
Robert J. Lamb
Keyword(s):  
Growth Rate ◽  
Genetic Variation ◽  
Low Temperature ◽  
General Theory ◽  
Rapid Development ◽  
Development Rate ◽  
High Rate ◽  
Spring Temperature ◽  
Slow Development ◽  
Rate Of Increase

Gilbert and Raworth (1996) propose a general theory to explain the effects of temperature on the development and growth rates of insects. The theory is evolutionary rather than physiological. They propose that insects are selected for a high rate of increase (i.e., rapid growth and large size) in spring, and for rapid development in summer. They claim that these selection pressures explain five “puzzles:” (1) the linearity of the relationship between development rate and temperature, (2) a reduction in the genetic variation of development rate at high temperature (i.e., average midsummer temperature), (3) a reduction in the genetic variation of growth rate at low temperature (i.e., average spring temperature), (4) slow development at the time of emergence after overwintering, and (5) a greater reduction in development rate than growth rate at low temperature.

Low temperature high-rate growth of crystalline Ge films on quartz and crystalline Si substrates from VHF inductively-coupled plasma of GeH4

2008 ◽  
Vol 517 (1) ◽  
pp. 216-218 ◽  
Author(s):  
Tsutomu Sakata ◽  
Katsunori Makihara ◽  
Hidenori Deki ◽  
Seiichiro Higashi ◽  
Seiichi Miyazaki
Keyword(s):  
Low Temperature ◽  
Inductively Coupled Plasma ◽  
High Rate ◽  
Inductively Coupled ◽  
Si Substrates

Low Temperature Synthesis of Carbon Nanotube on Si substrate Using Alcohol Gas Source in High Vacuum

2007 ◽  
Vol 1057 ◽  
Author(s):  
Takahiro Maruyama ◽  
Kenji Tanioku ◽  
Shigeya Naritsuka
Keyword(s):  
Low Temperature ◽  
Growth Temperature ◽  
Intensity Ratio ◽  
High Vacuum ◽  
In Situ Observation ◽  
Si Substrate ◽  
Growth Pressure ◽  
Gas Source ◽  
In Situ Observations

ABSTRACTConventional alcohol catalytic chemical vapor deposition (ACCVD) growth of carbon nanotubes (CNTs) have been carried out under ambient gases from 103 to105 Pa. These ambient gas pressures have prevented in situ observations using an electron beam during CNT growth, such as scanning electron microscopy (SEM), scanning tunneling microscopy (STM). Therefore, in order to realize the in situ observations and to clarify the growth mechanism of nanotube, CNT growth in a high vacuum is essential. In addition, the effects of residual gases also may be avoided in the growth under high vacuum. In this study, we carried out CNT growth under high vacuum using an alcohol gas source in an ultrahigh vacuum (UHV) chamber and we achieved CNT growth below 400°C without any excitation processes of carbon source. After deposition of Co catalyst of 1 nm in thickness on SiO2/Si substrate, ethanol gas was supplied to the substrate surface through a stainless steel nozzle in the UHV chamber. The growth temperature was monitored by a pyrometer during the growth, and set between 350 and 900°C. The supply of ethanol gas was controlled by monitoring an ambient pressure, which was varied from 1 ∼10-1 to 1 ∼10-4 Pa. The grown CNTs were characterized by SEM and Raman spectroscopy. The G/Si intensity ratio reached its maximum at 700°C, when the pressure was 1 ∼10-1 Pa. The maximum point of the G/Si peak intensity shifted to a lower temperature as the growth pressure decreased. When the pressure was 1 ∼10-4 Pa, the G/Si intensity ratio reached its maximum at 400°C, at which clear RBM peaks were observed in the Raman spectrum. From the RBM peaks, the CNT diameters were estimated to be between 0.9 to 1.7 nm, and CNTs of 1.2-1.4 nm in diameter were dominant at 1 ∼10-1 Pa, whereas thinner CNTs (diameter is below 1.0 nm) were increased with the reduction of the pressure. Our largest G/D ratio was about 40 for the sample grown at 1 ∼10-1 Pa, which is considerably larger than the reported value for the CNTs grown under low pressure. From these results, we conclude that the reduction of the growth pressure lowers the growth temperature. This technique can be applied to in situ observation, and may also be useful for low temperature growth of CNTs, which opens new possibilities for the fabrication of CNT based nanodevices.

scholarly journals Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

2020 ◽  
Author(s):  
Dario Schiavon ◽  
Elżbieta Litwin-Staszewska ◽  
Rafał Jakieła ◽  
Szymon Grzanka ◽  
Piotr Perlin
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Low Temperature ◽  
Surface Morphology ◽  
Growth Temperature ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Pit Formation ◽  
Movpe Growth

The effect of growth temperature and precursor flows on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.

scholarly journals Plastic Deformation in Profile-Coated Elliptical KB Mirrors

ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-3 ◽  
Author(s):  
Chian Liu ◽  
R. Conley ◽  
J. Qian ◽  
C. M. Kewish ◽  
W. Liu ◽  
...  
Keyword(s):  
Plastic Deformation ◽  
Stress Relaxation ◽  
Low Temperature ◽  
Vacuum Annealing ◽  
Film Stress ◽  
Si Substrate ◽  
X Ray ◽  
Si Substrates ◽  
White Beam

Profile coating has been successfully applied to produce elliptical Kirkpatrick-Baez (KB) mirrors using both cylindrical and flat Si substrates. Previously, focusing widths of 70 nm with 15-keV monochromatic and 80 nm with white beam were achieved using a flat Si substrate. Now, precision elliptical KB mirrors with sub-nm figure errors are produced with both Au and Pt coatings on flat substrates. Recent studies of bare Si-, Au-, and Pt-coated KB mirrors under prolonged synchrotron X-ray radiation and low-temperature vacuum annealing will be discussed in terms of film stress relaxation and Si plastic deformation.

Sign in / Sign up

Export Citation Format

Share Document