scholarly journals Enhanced method for High Spatial Resolution surface imaging and analysis of fungal spores using Scanning Electron Microscopy

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Gopal Venkatesh Babu ◽  
Palani Perumal ◽  
Sakthivel Muthu ◽  
Sridhar Pichai ◽  
Karthik Sankar Narayan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Fungal Spores ◽  
Surface Imaging ◽  
Scanning Electron

High spatial resolution spin‐polarized scanning electron microscopy (abstract)

1994 ◽  
Vol 75 (10) ◽  
pp. 6890-6890
Author(s):  
H. Matsuyama ◽  
K. Koike ◽  
F. Tomiyama ◽  
H. Aoi ◽  
Y. Shiroishi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Spin Polarized ◽  
Scanning Electron

High spatial-resolution domain-observation of longitudinal thin film media by spin-polarized scanning electron microscopy

1994 ◽  
Vol 30 (3) ◽  
pp. 1327-1330 ◽  
Author(s):  
H. Matsuyama ◽  
K. Koike ◽  
F. Tomiyama ◽  
Y. Shiroishi ◽  
A. Ishikawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Spin Polarized ◽  
Scanning Electron

scholarly journals Ni4Ti3 Precipitation during Ageing of MARES NiTi Shape Memory Alloys Studied by FEG-SEM

2008 ◽  
Vol 14 (S3) ◽  
pp. 13-16 ◽  
Author(s):  
F. Neves ◽  
A. Cunha ◽  
I. Martins ◽  
J.B. Correia ◽  
M. Oliveira ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
High Brightness ◽  
Very High Spatial Resolution ◽  
Brightness Field ◽  
Niti Shape Memory Alloys ◽  
Very High ◽  
Scanning Electron

The use of a high-brightness field-emission gun (FEG) in scanning electron microscopy (SEM) is a powerful technique to examine microstructures at very high spatial resolution down to nanometer level and has significantly enhanced our ability to solve challenging materials problems, allowing studies of nanoprecipitates.

Characterization of Rare Earth Element Ores with High Spatial Resolution Scanning Electron Microscopy

2014 ◽  
Vol 20 (S3) ◽  
pp. 648-649
Author(s):  
C. Teng ◽  
H. Demers ◽  
N. Brodusch ◽  
K.E. Waters ◽  
R. Gauvin
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Rare Earth ◽  
Spatial Resolution ◽  
Rare Earth Element ◽  
Earth Element ◽  
High Spatial Resolution ◽  
Scanning Electron

scholarly journals Reliable and High Spatial Resolution Method to Identify the Number of MoS2 Layers Using a Scanning Electron Microscopy

2017 ◽  
Vol 27 (12) ◽  
pp. 705-709 ◽  
Author(s):  
Rakesh Sadanand Sharbidre ◽  
◽  
Se Min Park ◽  
Chang Jun Lee ◽  
Byong Chon Park ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Resolution Method ◽  
Scanning Electron

scholarly journals Low Voltage Scanning Electron Microscopy

2002 ◽  
Vol 10 (2) ◽  
pp. 22-23 ◽  
Author(s):  
David C Joy ◽  
Dale E Newbury
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
High Spatial Resolution ◽  
Low Voltage ◽  
Incident Beam ◽  
Operational Mode ◽  
X Ray ◽  
Rapid Fall ◽  
Voltage Scanning ◽  
Scanning Electron

Low Voltage Scanning Electron Microscopy (LVSEM), defined as operation in the energy range below 5 keV, has become perhaps the most important single operational mode of the SEM. This is because the LVSEM offers advantages in the imaging of surfaces, in the observation of poorly conducting and insulating materials, and for high spatial resolution X-ray microanalysis. These benefits all occur because a reduction in the energy Eo of the incident beam leads to a rapid fall in the range R of the electrons since R ∼k.E01.66. The reduction in the penetration of the beam has important consequences.

On Low Voltage Scanning Electron Microscopy and Chemical Microanalysis

2000 ◽  
Vol 6 (4) ◽  
pp. 307-316 ◽  
Author(s):  
E.D. Boyes
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Spatial Resolution ◽  
Low Voltage ◽  
Energy Dispersive ◽  
Beam Specimen ◽  
Topographic Analysis ◽  
X Ray ◽  
Voltage Scanning ◽  
Scanning Electron

AbstractThe current status and general applicability of scanning electron microscopy (SEM) at low voltages is reviewed for both imaging (low voltage scanning electron microscopy, LVSEM) and chemical microanalysis (low voltage energy-dispersive X-ray spectrometry, LVEDX). With improved instrument performance low beam energies continue to have the expected advantages for the secondary electron imaging of low atomic number (Z) and electrically non-conducting samples. They also provide general improvements in the veracity of surface topographic analysis with conducting samples of all Z and at both low and high magnifications. In new experiments the backscattered electron (BSE) signal retains monotonic Z dependence to low voltages (<1 kV). This is contrary to long standing results in the prior literature and opens up fast chemical mapping with low dose and very high (nm-scale) spatial resolution. Similarly, energy-dispersive X-ray chemical microanalysis of bulk samples is extended to submicron, and in some cases to <0.1 μm, spatial resolution in three dimensions at voltages <5 kV. In favorable cases, such as the analysis of carbon overlayers at 1.5 kV, the thickness sensitivity for surface layers is extended to <2 nm, but the integrity of the sample surface is then of concern. At low beam energies (E0) the penetration range into the sample, and hence the X-ray escape path length out of it, is systematically restricted (R = F(E05/3)), with advantages for the accuracy or elimination of complex analysis-by-analysis matrix corrections for absorption (A) and fluorescence (F). The Z terms become more sensitive to E0 but they require only one-time calibrations for each element. The new approach is to make the physics of the beam–specimen interactions the primary factor and to design enabling instrumentation accordingly.

On Low Voltage Scanning Electron Microscopy and Chemical Microanalysis

2000 ◽  
Vol 6 (4) ◽  
pp. 307-316
Author(s):  
E.D. Boyes
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Spatial Resolution ◽  
Low Voltage ◽  
Energy Dispersive ◽  
Beam Specimen ◽  
Topographic Analysis ◽  
X Ray ◽  
Voltage Scanning ◽  
Scanning Electron

Abstract The current status and general applicability of scanning electron microscopy (SEM) at low voltages is reviewed for both imaging (low voltage scanning electron microscopy, LVSEM) and chemical microanalysis (low voltage energy-dispersive X-ray spectrometry, LVEDX). With improved instrument performance low beam energies continue to have the expected advantages for the secondary electron imaging of low atomic number (Z) and electrically non-conducting samples. They also provide general improvements in the veracity of surface topographic analysis with conducting samples of all Z and at both low and high magnifications. In new experiments the backscattered electron (BSE) signal retains monotonic Z dependence to low voltages (<1 kV). This is contrary to long standing results in the prior literature and opens up fast chemical mapping with low dose and very high (nm-scale) spatial resolution. Similarly, energy-dispersive X-ray chemical microanalysis of bulk samples is extended to submicron, and in some cases to <0.1 μm, spatial resolution in three dimensions at voltages <5 kV. In favorable cases, such as the analysis of carbon overlayers at 1.5 kV, the thickness sensitivity for surface layers is extended to <2 nm, but the integrity of the sample surface is then of concern. At low beam energies (E0) the penetration range into the sample, and hence the X-ray escape path length out of it, is systematically restricted (R = F(E05/3)), with advantages for the accuracy or elimination of complex analysis-by-analysis matrix corrections for absorption (A) and fluorescence (F). The Z terms become more sensitive to E0 but they require only one-time calibrations for each element. The new approach is to make the physics of the beam–specimen interactions the primary factor and to design enabling instrumentation accordingly.

A Low Electron Voltage Approach to Increase Spatial Resolution of Temperature Mapping in Thermal Scanning Electron Microscopy

2013 ◽  
Vol 1525 ◽  
Author(s):  
Xiaowei Wu ◽  
Robert Hull
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Spatial Resolution ◽  
Electron Backscatter Diffraction ◽  
Mapping Technique ◽  
Thermal Diffuse Scattering ◽  
Temperature Mapping ◽  
Energy Incident ◽  
Backscatter Diffraction ◽  
Scanning Electron

ABSTRACTThermal scanning electron microscopy is a new temperature mapping technique based on thermal diffuse scattering in electron backscatter diffraction in a scanning electron microscope. It provides both nano-scale resolution and far-field non-contact temperature mapping capabilities no other methods can adequately combine. While a calculated spatial resolution of less than 100 nm has already been realized using 20 keV electrons, lower energy incident electrons should enable still higher spatial resolution (even down to 10 nm). In this paper, the feasibility of this approach is examined.

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