A Low Electron Voltage Approach to Increase Spatial Resolution of Temperature Mapping in Thermal Scanning Electron Microscopy

2013 ◽  
Vol 1525 ◽  
Author(s):  
Xiaowei Wu ◽  
Robert Hull

ABSTRACTThermal scanning electron microscopy is a new temperature mapping technique based on thermal diffuse scattering in electron backscatter diffraction in a scanning electron microscope. It provides both nano-scale resolution and far-field non-contact temperature mapping capabilities no other methods can adequately combine. While a calculated spatial resolution of less than 100 nm has already been realized using 20 keV electrons, lower energy incident electrons should enable still higher spatial resolution (even down to 10 nm). In this paper, the feasibility of this approach is examined.

CORROSION ◽  
10.5006/3121 ◽  
2019 ◽  
Vol 75 (10) ◽  
pp. 1194-1206
Author(s):  
Hongxing Liang ◽  
Rebecca Filardo Schaller ◽  
Edouard Asselin

The effect of predeformation on corrosion of ASTM A106B pipeline steel exposed to 1.7 mM sodium chloride droplets covered by simulated diluted bitumen was evaluated. The microstructures of ASTM A106B pipeline steel with and without predeformation were examined by electron backscatter diffraction and optical microscope. Corrosion of pipeline steel under the chloride droplet covered by simulated diluted bitumen for 5 min was studied with and without predeformation using scanning electron microscopy. Corrosion was initiated at the surface of ASTM A106B pipeline steel after 5 min of exposure. The predeformation increased the number of pits initiated at the steel surface and the number of partially dissolved inclusions. Scanning electron microscopy, profilometry, and x-ray photoelectron spectroscopy measurements were used to characterize the corrosion of the specimens with and without prior deformation after 24 h of exposure to an oil-covered droplet. The corrosion products coalesced and formed a small circular ring which deviated from the geometric center of the droplet. The diameters of the circular rings for the unbent and pre-bent specimens were 2.371±0.125 mm and 2.465±0.046 mm, respectively; the distances between the circular ring centers and droplet centers were 0.599±0.124 mm and 0.620±0.190 mm, respectively. The average corrosion penetration of the predeformed specimen was 1.18±0.09 times higher than that of the specimen without predeformation.


2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Gopal Venkatesh Babu ◽  
Palani Perumal ◽  
Sakthivel Muthu ◽  
Sridhar Pichai ◽  
Karthik Sankar Narayan ◽  
...  

2000 ◽  
Vol 6 (4) ◽  
pp. 307-316 ◽  
Author(s):  
E.D. Boyes

AbstractThe current status and general applicability of scanning electron microscopy (SEM) at low voltages is reviewed for both imaging (low voltage scanning electron microscopy, LVSEM) and chemical microanalysis (low voltage energy-dispersive X-ray spectrometry, LVEDX). With improved instrument performance low beam energies continue to have the expected advantages for the secondary electron imaging of low atomic number (Z) and electrically non-conducting samples. They also provide general improvements in the veracity of surface topographic analysis with conducting samples of all Z and at both low and high magnifications. In new experiments the backscattered electron (BSE) signal retains monotonic Z dependence to low voltages (<1 kV). This is contrary to long standing results in the prior literature and opens up fast chemical mapping with low dose and very high (nm-scale) spatial resolution. Similarly, energy-dispersive X-ray chemical microanalysis of bulk samples is extended to submicron, and in some cases to <0.1 μm, spatial resolution in three dimensions at voltages <5 kV. In favorable cases, such as the analysis of carbon overlayers at 1.5 kV, the thickness sensitivity for surface layers is extended to <2 nm, but the integrity of the sample surface is then of concern. At low beam energies (E0) the penetration range into the sample, and hence the X-ray escape path length out of it, is systematically restricted (R = F(E05/3)), with advantages for the accuracy or elimination of complex analysis-by-analysis matrix corrections for absorption (A) and fluorescence (F). The Z terms become more sensitive to E0 but they require only one-time calibrations for each element. The new approach is to make the physics of the beam–specimen interactions the primary factor and to design enabling instrumentation accordingly.


2000 ◽  
Vol 6 (4) ◽  
pp. 307-316
Author(s):  
E.D. Boyes

Abstract The current status and general applicability of scanning electron microscopy (SEM) at low voltages is reviewed for both imaging (low voltage scanning electron microscopy, LVSEM) and chemical microanalysis (low voltage energy-dispersive X-ray spectrometry, LVEDX). With improved instrument performance low beam energies continue to have the expected advantages for the secondary electron imaging of low atomic number (Z) and electrically non-conducting samples. They also provide general improvements in the veracity of surface topographic analysis with conducting samples of all Z and at both low and high magnifications. In new experiments the backscattered electron (BSE) signal retains monotonic Z dependence to low voltages (<1 kV). This is contrary to long standing results in the prior literature and opens up fast chemical mapping with low dose and very high (nm-scale) spatial resolution. Similarly, energy-dispersive X-ray chemical microanalysis of bulk samples is extended to submicron, and in some cases to <0.1 μm, spatial resolution in three dimensions at voltages <5 kV. In favorable cases, such as the analysis of carbon overlayers at 1.5 kV, the thickness sensitivity for surface layers is extended to <2 nm, but the integrity of the sample surface is then of concern. At low beam energies (E0) the penetration range into the sample, and hence the X-ray escape path length out of it, is systematically restricted (R = F(E05/3)), with advantages for the accuracy or elimination of complex analysis-by-analysis matrix corrections for absorption (A) and fluorescence (F). The Z terms become more sensitive to E0 but they require only one-time calibrations for each element. The new approach is to make the physics of the beam–specimen interactions the primary factor and to design enabling instrumentation accordingly.


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