AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature

Thin films of poly vinyl alcohol (PVA) were prepared on pre-cleaned glass substrates by Dip Coating Method. FTIR spectrum was used to identify the functional groups present in the prepared films. The vibrational peaks observed at 1260 cm-1 and 851 cm-1 are assigned to C–C stretching and CH rocking of PVA.The characteristic band appearing at 1432 cm-1 is assigned to C–H bend of CH2 of PVA. The thickness of the prepared thin films were measured by using an electronic thickness measuring instrument (Tesatronic-TTD20) and cross checked by gravimetric method. XRD spectra indicated the amorphous nature of the films.Surface morphology of the coated films was studied by scanning electron microscope (SEM). The surface revealed no pits and pin holes on the surface. The observed surface morphology indicated that these films could be used as dielectric layer in organic thin film transistors and as drug delivery system for wound healing.

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Ultraviolet Light-Densified Oxide-Organic Self-Assembled Dielectrics: Processing Thin-Film Transistors at Room Temperature

ACS Applied Materials & Interfaces ◽

10.1021/acsami.0c20345 ◽

2021 ◽

Vol 13 (2) ◽

pp. 3445-3453

Author(s):

Wei Huang ◽

Xinge Yu ◽

Li Zeng ◽

Binghao Wang ◽

Atsuro Takai ◽

...

Keyword(s):

Thin Film ◽

Ultraviolet Light ◽

Thin Film Transistors ◽

Room Temperature ◽

Self Assembled

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Flexible electric-double-layer thin film transistors based on a vertical InGaZnO4 channel

RSC Advances ◽

10.1039/d1ra02155a ◽

2021 ◽

Vol 11 (29) ◽

pp. 17910-17913

Author(s):

Liuhui Lei ◽

Yuanyuan Tan ◽

Xing Yuan ◽

Wei Dou ◽

Jiale Zhang ◽

...

Keyword(s):

Thin Film ◽

Double Layer ◽

Electric Double Layer ◽

Thin Film Transistors ◽

Room Temperature ◽

Layer Thin Film

Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO4 (IGZO) channel are fabricated at room temperature.

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HgTe Nanocrystal-Based Thin-Film Transistors Fabricated on Glass Substrates

IEEE Electron Device Letters ◽

10.1109/led.2006.888191 ◽

2007 ◽

Vol 28 (1) ◽

pp. 42-44 ◽

Cited By ~ 9

Author(s):

Hyunsuk Kim ◽

Dong-Won Kim ◽

Kyoungah Cho ◽

Sangsig Kim

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Glass Substrates

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Formaldehyde Detection Based on P3HT/InSnO Composite Thin Film Transistor

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.875-877.82 ◽

2014 ◽

Vol 875-877 ◽

pp. 82-86

Author(s):

Xian Li ◽

Ya Dong Jiang ◽

Hui Ling Tai ◽

Guang Zhong Xie ◽

Wen Chao Dan

Keyword(s):

Thin Film ◽

Composite Film ◽

Thin Film Transistors ◽

Room Temperature ◽

Thin Film Transistor ◽

Organic Thin Film Transistors ◽

Composite Thin Film ◽

Organic Thin Film ◽

Response And Recovery

Formaldehyde, a colorless and pungent-smelling gas, had been confirmed be a huge threat to people health. The detection of formaldehyde was necessary and important at room temperature. Sprayed P3HT/InSnO composite film based on organic thin film transistors (OTFT) was fabricated to detect formaldehyde at room temperature in this paper. The results showed that P3HT/ InSnO-OTFT showed better response and recovery to HCHO compared with P3HT-OTFT at room temperature.

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