scholarly journals Sizing single nanoscale objects from polarization forces

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
H. Lozano ◽  
R. Millán-Solsona ◽  
R. Fabregas ◽  
G. Gomila
Keyword(s):  
Silver Nanowires ◽  
Electrostatic Force ◽  
Electric Polarization ◽  
Scanning Probe ◽  
Force Microscopy ◽  
Wide Range ◽  
Potential Applications ◽  
Nanoscale Object ◽  
Topographic Imaging ◽  
Microscopic Techniques

Abstract Sizing natural or engineered single nanoscale objects is fundamental in many areas of science and technology. To achieve it several advanced microscopic techniques have been developed, mostly based on electron and scanning probe microscopies. Still for soft and poorly adhered samples the existing techniques face important challenges. Here, we propose an alternative method to size single nanoscale objects based on the measurement of its electric polarization. The method is based on Electrostatic Force Microscopy measurements combined with a specifically designed multiparameter quantification algorithm, which gives the physical dimensions (height and width) of the nanoscale object. The proposed method is validated with ~50 nm diameter silver nanowires, and successfully applied to ~10 nm diameter bacterial polar flagella, an example of soft and poorly adhered nanoscale object. We show that an accuracy comparable to AFM topographic imaging can be achieved. The main advantage of the proposed method is that, being based on the measurement of long-range polarization forces, it can be applied without contacting the sample, what is key when considering poorly adhered and soft nanoscale objects. Potential applications of the proposed method to a wide range of nanoscale objects relevant in Material, Life Sciences and Nanomedicine is envisaged.

Localized Charge Storage in CeO2/Si(111) By Electrostatic Force Microscopy

1999 ◽  
Vol 584 ◽  
Author(s):  
J. T. Jones ◽  
P. M. Bridger ◽  
O. J. Marsh ◽  
T. C. McGill
Keyword(s):  
Decay Time ◽  
Scanning Probe Microscopy ◽  
Electrostatic Force ◽  
Scanning Probe ◽  
Electrostatic Force Microscopy ◽  
Double Barrier ◽  
Force Microscopy ◽  
Charge Decay ◽  
Initial Charge ◽  
Sample Separation

AbstractIn this report, the local patterning of charge into CeO2/Si structures by scanning probe microscopy is examined. An electrostatic force microscope (EFM) has been used to write and image localized dots of charge on to double barrier CeO2/Si/CeO2/Si(lll) structures. By applying a large tip bias Vtip = 6 – 10 V and reducing the tip to sample separation to z = 3 – 5 nm for write times of t = 30 – 60 s, arrays of charge dots 60 – 250 nm FWHM have been written. The dependence of dot size and total stored charge on various writing parameters such as tip writing bias, tip to sample separation, and write time is examined. The total stored charge is found to be Q = 5 – 200 e per charge dot. These dots of charge are shown to be stable over periods of time greater than 24 hrs, with an initial charge decay time constant of τ ∼ 9.5 hrs followed by a period of much slower decay with τ > 24 hrs. Charge decay time constants are found to be dependent on the thickness of the lower CeO2 tunneling barrier.

scholarly journals Scanning Probe Spectroscopy of WS2/Graphene Van Der Waals Heterostructures

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2494
Author(s):  
Franco Dinelli ◽  
Filippo Fabbri ◽  
Stiven Forti ◽  
Camilla Coletti ◽  
Oleg V. Kolosov ◽  
...  
Keyword(s):  
Second Harmonic ◽  
Electrostatic Force ◽  
Scanning Probe ◽  
Comparative Approach ◽  
Force Microscopy ◽  
Electrostatic Properties ◽  
Buried Interfaces ◽  
Tool Set ◽  
Probe Spectroscopy ◽  
2D Crystals

In this paper, we present a study of tungsten disulfide (WS2) two-dimensional (2D) crystals, grown on epitaxial Graphene. In particular, we have employed scanning electron microscopy (SEM) and µRaman spectroscopy combined with multifunctional scanning probe microscopy (SPM), operating in peak force–quantitative nano mechanical (PF-QNM), ultrasonic force microscopy (UFM) and electrostatic force microscopy (EFM) modes. This comparative approach provides a wealth of useful complementary information and allows one to cross-analyze on the nanoscale the morphological, mechanical, and electrostatic properties of the 2D heterostructures analyzed. Herein, we show that PF-QNM can accurately map surface properties, such as morphology and adhesion, and that UFM is exceptionally sensitive to a broader range of elastic properties, helping to uncover subsurface features located at the buried interfaces. All these data can be correlated with the local electrostatic properties obtained via EFM mapping of the surface potential, through the cantilever response at the first harmonic, and the dielectric permittivity, through the cantilever response at the second harmonic. In conclusion, we show that combining multi-parametric SPM with SEM and µRaman spectroscopy helps to identify single features of the WS2/Graphene/SiC heterostructures analyzed, demonstrating that this is a powerful tool-set for the investigation of 2D materials stacks, a building block for new advanced nano-devices.

Polarization Screening and Image Formation in SSPM, EFM and Piezoresponse Imaging of Ferroelectric BaTiO3 (100) Surface

2000 ◽  
Vol 6 (S2) ◽  
pp. 706-707
Author(s):  
Sergei V. Kalinin ◽  
Dawn A. Bonnell
Keyword(s):  
Electrostatic Force ◽  
Ferroelectric Materials ◽  
Scanning Probe ◽  
Microwave Ceramics ◽  
Force Microscopy ◽  
Resonant Frequency Shift ◽  
Significant Interest ◽  
Ferroelectric Surfaces ◽  
Scanning Surface Potential Microscopy

Possible applications of ferroelectric materials in non-volatile memories, MEMS, microwave ceramics, PTCR devices and sensors draw significant interest to these materials. Operation of most of these devices relies heavily on the surface (FRAM and other thin-film devices) and interface (PTCR, varistors) properties of ferroeiectrics, particularly on the polarization and charge distribution in the surface or interface region. Electrostatic scanning probe techniques such as electrostatic force microscopy (EFM), scanning surface potential microscopy (SSPM) and piezoresponse imaging (PRI) can be successfully employed for the characterization of ferroelectric surfaces on the micron and submicron level. The former technique is based on the detection of the resonant frequency shift of mechanically driven cantilever, which is proportional to gradient of electrostatic force acting on the tip. The latter two techniques are based on the voltage modulation approach, i.e. during imaging the piezoelectric actuator driving the cantilever is disengaged and the AC bias is applied directly to conductive tip.

Imaging of the Carrier Density of States in Low Dimensional Structures Using Electrostatic Force Microscopy

1998 ◽  
Vol 545 ◽  
Author(s):  
D. Gekhtman ◽  
Z. B. Zhang ◽  
D. Adderton ◽  
M. S. Dresselhaus ◽  
G. Dresselhaus
Keyword(s):  
Density Of States ◽  
Electrostatic Force ◽  
Multiple Quantum Well ◽  
Scanning Probe ◽  
Electrostatic Force Microscopy ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Force Microscopy ◽  
Wire Arrays ◽  
Low Dimensional

AbstractIn this work we show that scanning probe electrostatic force microscopy (EFM) can be applied to low dimensional electronic nanostructures for imaging the density of states of quantum confined carriers. The results on EFM studies are presented for quasione- dimensional (ID) Bi quantum wire arrays and quasi-two-dimensional (2D) GaAs/AlxGa1-x As multiple quantum well structures.

Electrostatic Force Microscopy of Nanofibers and Carbon Nanotubes: Quantitative Analysis Using Theory and Experiment

2007 ◽  
Vol 1025 ◽  
Author(s):  
Sujit Sankar Datta ◽  
Cristian Staii ◽  
Nicholas J. Pinto ◽  
Douglas R. Strachan ◽  
AT Charlie Johnson
Keyword(s):  
Carbon Nanotubes ◽  
Electrostatic Force ◽  
Electrical Contacts ◽  
Scanning Probe ◽  
Electrostatic Force Microscopy ◽  
Electronic Density ◽  
Basic Principles ◽  
Force Microscopy ◽  
Theory And Experiment

AbstractElectrostatic force microscopy (EFM) is a widely used scanning-probe technique for the characterization of electronic properties of nanoscale samples without the use of electrical contacts. Here we review the basic principles of EFM, developing a quantitative framework by which EFM measurements of extended nanostructures can be understood. We support our calculations with experimental data of EFM of carbon nanotubes and conducting or insulating electrospun polyaniline-based nanofibers. Furthermore, we explore routes towards extending EFM as a means of non-invasively probing the local electronic density of states of carbon nanotubes.

Charging effects in Si quantum dots for Non Volatile Memories applications monitored by Electrostatic Force Microscopy

2003 ◽  
Vol 794 ◽  
Author(s):  
R.A. Puglisi ◽  
G. Nicotra ◽  
S. Lombardo ◽  
C. Spinella ◽  
G. Ammendola ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Electrostatic Force ◽  
Chemical Vapour ◽  
Nanoscale Structures ◽  
Force Microscopy ◽  
Si Nanocrystals ◽  
Potential Applications ◽  
P Type ◽  
Mos Structures ◽  
Si Quantum Dots

ABSTRACTNanoscale structures have been recently proposed as charge storage nodes due to their potential applications for future nanoscale memory devices. Our approach is based on the idea of using Si nanodots as discrete floating gates. To experimentally investigate such potential, we have fabricated MOS structures with Si nanocrystals. The dots have been deposited onto an ultra-thin tunnel oxide by chemical vapour deposition, and then annealed at 1000 °C for 40 s, to crystallize all the dots. After deposition the dots have been covered by a CVD SiO2 layer, thus resulting in dots completely embedded in stoichiometric silicon oxide. The nanocrystal density and size have been studied by energy filtered TEM (EFTEM) analysis. An electrostatic force microscope has been used to locally inject the charge. By applying a relatively large tip voltage a few dots have been charged, and the shift in the tip phase has been monitored. The shift in the phase is attributed to the presence of the charge in the sample. A comparison between n and p type samples is also shown.

Local Potential at Atomically Abrupt Oxide Interfaces by Scanning Probe Microscopy

1999 ◽  
Vol 586 ◽  
Author(s):  
Sergei V. Kalinin ◽  
Dawn A. Bonnell
Keyword(s):  
Scanning Probe Microscopy ◽  
Electrostatic Force ◽  
Scanning Probe ◽  
Nanometer Scale ◽  
Electrostatic Model ◽  
Oxide Interfaces ◽  
Force Microscopy ◽  
Interface Potential ◽  
Scanning Surface Potential Microscopy ◽  
Imaging Mechanisms

ABSTRACTElectrostatic force microscopy and scanning surface potential microscopy are combined to quantify nanometer scale field variations in the vicinity of grain boundaries in donor doped σ15 SrTiO3 bicrystals. An analytical electrostatic model is used to develop a procedure for determining interface potential from measurements made above the surface. Grain boundary potentials and depletion widths determined by both techniques are in excellent agreement despite the fundamental difference in imaging mechanisms. The comparison confirms the analytical approach and illustrates use of scanning probes to image interface properties.

Electric Polarization Properties of Single Bacteria Measured with Electrostatic Force Microscopy

ACS Nano ◽  
2014 ◽  
Vol 8 (10) ◽  
pp. 9843-9849 ◽  
Author(s):  
Daniel Esteban-Ferrer ◽  
Martin A. Edwards ◽  
Laura Fumagalli ◽  
Antonio Juárez ◽  
Gabriel Gomila
Keyword(s):  
Electrostatic Force ◽  
Electric Polarization ◽  
Electrostatic Force Microscopy ◽  
Force Microscopy

Characterization of local electric properties of oxide materials using scanning probe microscopy techniques: A review

2018 ◽  
Vol 11 (05) ◽  
pp. 1830002 ◽  
Author(s):  
Wanheng Lu ◽  
Kaiyang Zeng
Keyword(s):  
Metal Oxides ◽  
Scanning Probe Microscopy ◽  
Electrostatic Force ◽  
Functional Materials ◽  
Electric Properties ◽  
Scanning Probe ◽  
Surface Charges ◽  
Kelvin Probe ◽  
Probe Microscopy ◽  
Force Microscopy

The structure-function relationship at the nanoscale is of great importance for many functional materials, such as metal oxides. To explore this relationship, Scanning Probe Microscopy (SPM)-based techniques are used as powerful and effective methods owing to their capability to investigate the local surface structures and multiple properties of the materials with a high spatial resolution. This paper gives an overview of SPM-based techniques for characterizing the electric properties of metal oxides with potential in the applications of electronics devices. Three types of SPM techniques, including conductive AFM ([Formula: see text]-AFM), Kelvin Probe Force Microscopy (KPFM), and Electrostatic Force Microscopy (EFM), are summarized with focus on their principles and advances in measuring the electronic transport, ionic dynamics, the work functions and the surface charges of oxides.

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