scholarly journals Direct Simulation Monte Carlo investigation of fluid characteristics and gas transport in porous microchannels

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Vahid Shariati ◽  
Mohammad Hassan Ahmadian ◽  
Ehsan Roohi

AbstractThe impetus of the current research is to use the direct simulation Monte Carlo (DSMC) algorithm to investigate fluid behaviour and gas transport in porous microchannels. Here, we demonstrate DSMC’s capability to simulate porous media up to 40% porosity. In this study, the porous geometry is generated by a random distribution of circular obstacles through the microchannel with no interpenetration between the obstacles. The influence of the morphology along with rarefaction and gas type on the apparent permeability is investigated. Moreover, the effects of porosity, solid particle’s diameter and specific surface area are considered. Our results demonstrate that although decreasing porosity intensifies tortuosity in the flow field, the tortuosity reduces at higher Knudsen numbers due to slip flow at solid boundaries. In addition, our study on two different gas species showed that the gas type affects slippage and apparent gas permeability. Finally, comparing different apparent permeability models showed that Beskok and Karniadakis model is valid only up to the early transition regime and at higher Knudsen numbers, the current data matches those models that take Knudsen diffusion into account as well.

Author(s):  
Sauro Succi

This chapter provides a bird’s eye view of the main numerical particle methods used in the kinetic theory of fluids, the main purpose being of locating Lattice Boltzmann in the broader context of computational kinetic theory. The leading numerical methods for dense and rarified fluids are Molecular Dynamics (MD) and Direct Simulation Monte Carlo (DSMC), respectively. These methods date of the mid 50s and 60s, respectively, and, ever since, they have undergone a series of impressive developments and refinements which have turned them in major tools of investigation, discovery and design. However, they are both very demanding on computational grounds, which motivates a ceaseless demand for new and improved variants aimed at enhancing their computational efficiency without losing physical fidelity and vice versa, enhance their physical fidelity without compromising computational viability.


1998 ◽  
Vol 120 (2) ◽  
pp. 296-302 ◽  
Author(s):  
Masato Ikegawa ◽  
Jun’ichi Kobayashi ◽  
Morihisa Maruko

As integrated circuits are advancing toward smaller device features, step-coverage in submicron trenches and holes in thin film deposition are becoming of concern. Deposition consists of gas flow in the vapor phase and film growth in the solid phase. A deposition profile simulator using the direct simulation Monte Carlo method has been developed to investigate deposition profile characteristics on small trenches which have nearly the same dimension as the mean free path of molecules. This simulator can be applied to several deposition processes such as sputter deposition, and atmospheric- or low-pressure chemical vapor deposition. In the case of low-pressure processes such as sputter deposition, upstream boundary conditions of the trenches can be calculated by means of rarefied gas flow analysis in the reactor. The effects of upstream boundary conditions, molecular collisions, sticking coefficients, and surface migration on deposition profiles in the trenches were clarified.


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