scholarly journals High quality VO2 thin films synthesized from V2O5 powder for sensitive near-infrared detection

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Xitao Guo ◽  
Yonghao Tan ◽  
Yupei Hu ◽  
Zainab Zafar ◽  
Jun Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Near Infrared ◽  
Infrared Detection ◽  
Ambient Conditions ◽  
High Quality ◽  
Resistance Change ◽  
Infrared Sensing ◽  
Intermediate Phases ◽  
Vo2 Thin Films ◽  
Transport Method

AbstractVapor transport method has been successfully used to synthesize high quality VO2 thin films on SiO2/Si substrate using V2O5 as a precursor in an inert-gas environment. The morphological and structural evolutions of the intermediate phases during the nucleation and growth processes were investigated by SEM and Raman spectroscopy, respectively. The results showed that the conversion of V2O5 powder to VO2 thin films was dominated by a melting-evaporation-nucleation-growth mechanism. Further characterization results demonstrated that the high quality crystals of monoclinic VO2 thin films exhibit a sharp resistance change up to 4 orders of magnitude. In addition, the VO2 thin films exhibited good near-infrared response, high stability, and reproducibility under ambient conditions, which should be promising for sensitive near-infrared detection. Our work not only provided a simple and direct approach to synthesize high quality VO2 thin films with distinct phase transition properties but also demonstrated the possible infrared sensing application in the future.

Selective near infrared transmittance control of thermochromic VO2 thin films through colloidal lithography

2019 ◽  
Vol 477 ◽  
pp. 22-26 ◽  
Author(s):  
Jung-Hoon Yu ◽  
Sang-Hun Nam ◽  
Ji Won Lee ◽  
Dong In Kim ◽  
Jin-Hyo Boo
Keyword(s):  
Thin Films ◽  
Near Infrared ◽  
Colloidal Lithography ◽  
Infrared Transmittance ◽  
Vo2 Thin Films

High quality thermochromic VO2 thin films deposited at room temperature by balanced and unbalanced HiPIMS

2021 ◽  
Vol 227 ◽  
pp. 111113
Author(s):  
J.L. Victor ◽  
C. Marcel ◽  
L. Sauques ◽  
N. Penin ◽  
A. Rougier
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
High Quality ◽  
Vo2 Thin Films

scholarly journals Enhanced Phase Transition Properties of VO2 Thin Films on 6H-SiC (0001) Substrate Prepared by Pulsed Laser Deposition

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1061 ◽  
Author(s):  
Xiankun Cheng ◽  
Qiang Gao ◽  
Kaifeng Li ◽  
Zhongliang Liu ◽  
Qinzhuang Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Thermal Conductivity ◽  
Pulsed Laser Deposition ◽  
Lattice Structure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Quality ◽  
Rutile Structure ◽  
Vo2 Thin Films

For growing high quality epitaxial VO2 thin films, the substrate with suitable lattice parameters is very important if considering the lattice matching. In addition, the thermal conductivity between the substrate and epitaxial film should be also considered. Interestingly, the c-plane of hexagonal 6H-SiC with high thermal conductivity has a similar lattice structure to the VO2 (010), which enables epitaxial growth of high quality VO2 films on 6H-SiC substrates. In the current study, we deposited VO2 thin films directly on 6H-SiC (0001) single-crystal substrates by pulsed laser deposition (PLD) and systematically investigated the crystal structures and surface morphologies of the films as the function of growth temperature and film thickness. With optimized conditions, the obtained epitaxial VO2 film showed pure monoclinic phase structure and excellent phase transition properties. Across the phase transition from monoclinic structure (M1) to tetragonal rutile structure (R), the VO2/6H-SiC (0001) film demonstrated a sharp resistance change up to five orders of magnitude and a narrow hysteresis width of only 3.3 °C.

Exploring the infrared-sensing properties of polymorphous silicon-germanium (pm-SixGey:H) thin films

2014 ◽  
Vol 92 (7/8) ◽  
pp. 565-569 ◽  
Author(s):  
M. Moreno ◽  
A. Torres ◽  
C. Calleja ◽  
R. Ambrosio ◽  
P. Rosales ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Germanium ◽  
Infrared Detection ◽  
Thermal Coefficient ◽  
Ir Radiation ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
Sensing Properties ◽  
Infrared Sensing ◽  
Thermal Coefficient Of Resistance

In this work we have performed an exploratory study of the infrared (IR) sensing properties of polymorphous silicon–germanium (pm-SixGey:H) thin films. Our objective was to study the characteristics that are important parameters for infrared detection, as activation energy (Ea), thermal coefficient of resistance (TCR), room temperature conductivity (σRT), and responsivity to IR radiation. After characterization, our results demonstrated that pm-SiGe:H films have advantages over a-Si:H,B, pm-Si:H, and pm-Ge:H, because of the possibility to tailor its properties as σRT, Ea, and TCR, and moreover, the possibility to adjust those values for specific applications.

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