Metal halide perovskites are emerging materials for next-generation optoelectronic devices, of which all-inorganic CsPbBr3 perovskite has attracted increasing attention due to outstanding stability and excellent photoelectric characteristics compared with organic-inorganic...
We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color μLEDs demonstrate strong and highly stable white-light emission with high color rendering index of ~ 94. The μLEDs are in circular shapes with the diameter varying from 30 to 100 μm. Such high-performance μLEDs are perfectly suitable for the next generation of high-resolution micro-display applications.
White organic light emitting diodes (OLED) are promising as the next-generation lighting sources, for which thermally activated delayed fluorescence (TADF) materials provides an alternative feature low cost and environmental sustainability,...
Organic compounds that show Thermally Activated Delayed Fluorescence (TADF) have become wildly popular as next generation emitters in organic light-emitting diodes (OLEDs), but since 2016, have received significant and increasing attention as photocatalysts.
Next-generation electroluminescent displays require efficient and stable red, green and blue light-emitting diodes (LEDs) with low cost, excellent color purity and flexibility, for which perovskites-based LEDs (PeLEDs) are a promising...
Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays