scholarly journals Rydberg excitons in Cu2O microcrystals grown on a silicon platform

2020 ◽  
Vol 1 (1) ◽  
Author(s):  
Stephan Steinhauer ◽  
Marijn A. M. Versteegh ◽  
Samuel Gyger ◽  
Ali W. Elshaari ◽  
Birgit Kunert ◽  
...  
Keyword(s):  
Oxidation Process ◽  
Material System ◽  
Bulk Crystals ◽  
Wide Spread ◽  
Novel Device ◽  
Solar Water Splitting ◽  
Large Exciton Binding Energy ◽  
On Chip ◽  
Atomic States ◽  
Quantum Photonics

AbstractCuprous oxide (Cu2O) is a semiconductor with large exciton binding energy and significant technological importance in applications such as photovoltaics and solar water splitting. It is also a superior material system for quantum optics that enabled the observation of intriguing phenomena, such as Rydberg excitons as solid-state analogue to highly-excited atomic states. Previous experiments related to excitonic properties focused on natural bulk crystals due to major difficulties in growing high-quality synthetic samples. Here, the growth of Cu2O microcrystals with excellent optical material quality and very low point defect levels is presented. A scalable thermal oxidation process is used that is ideally suited for integration on silicon, demonstrated by on-chip waveguide-coupled Cu2O microcrystals. Moreover, Rydberg excitons in site-controlled Cu2O microstructures are shown, relevant for applications in quantum photonics. This work paves the way for the wide-spread use of Cu2O in optoelectronics and for the development of novel device technologies.

scholarly journals Hybrid integration methods for on-chip quantum photonics

Optica ◽  
2020 ◽  
Vol 7 (4) ◽  
pp. 291 ◽  
Author(s):  
Je-Hyung Kim ◽  
Shahriar Aghaeimeibodi ◽  
Jacques Carolan ◽  
Dirk Englund ◽  
Edo Waks
Keyword(s):  
Hybrid Integration ◽  
Integration Methods ◽  
On Chip ◽  
Quantum Photonics

Recent Progress in III-Nitride Tunnel Junction-Based Optoelectronics

2019 ◽  
Vol 28 (01n02) ◽  
pp. 1940012
Author(s):  
Zane Jamal-Eddine ◽  
Yuewei Zhang ◽  
Siddharth Rajan
Keyword(s):  
Tunnel Junction ◽  
Recent Progress ◽  
Tunnel Junctions ◽  
Optoelectronic Devices ◽  
Material System ◽  
Novel Device ◽  
Unique Material ◽  
Material Systems ◽  
Device Applications ◽  
Commercial Device

Tunnel junctions have garnered much interest from the III-Nitride optoelectronic research community within recent years. Tunnel junctions have seen applications in several material systems with relatively narrow bandgaps as compared to the III-Nitrides. Although they were initially dismissed as ineffective for commercial device applications due to high voltage penalty and on resistance owed to the wide bandgap nature of the III-Nitride material systems, recent development in the field has warranted further study of such tunnel junction enabled devices. They are of particular interest for applications in III-Nitride optoelectronic devices in which they can be used to enable novel device designs which could potentially address some of the most challenging physical obstacles presented with this unique material system. In this work we review the recent progress made on the study of III-Nitride tunnel junction-based optoelectronic devices and the challenges which are still faced in the field of study today.

Integrated Photonic Circuits in Gallium Nitride and Aluminum Nitride

2014 ◽  
Vol 23 (01n02) ◽  
pp. 1450001 ◽  
Author(s):  
Chi Xiong ◽  
Wolfram Pernice ◽  
Carsten Schuck ◽  
Hong X. Tang
Keyword(s):  
High Speed ◽  
Optical Signal ◽  
Silicon Substrates ◽  
Material System ◽  
Group Iii ◽  
Electro Optic ◽  
New Material ◽  
Nanophotonic Circuits ◽  
Group Iii Nitride ◽  
On Chip

Integrated optics is a promising optical platform both for its enabling role in optical interconnects and applications in on-chip optical signal processing. In this paper, we discuss the use of group III-nitride (GaN, AlN) as a new material system for integrated photonics compatible with silicon substrates. Exploiting their inherent second-order nonlinearity we demonstrate and second, third harmonic generation in GaN nanophotonic circuits and high-speed electro-optic modulation in AlN nanophotonic circuits.

A ROOM TEMPERATURE BALLISTIC DEFLECTION TRANSISTOR FOR HIGH PERFORMANCE APPLICATIONS

2009 ◽  
Vol 19 (01) ◽  
pp. 23-31 ◽  
Author(s):  
QUENTIN DIDUCK ◽  
HIROSHI IRIE ◽  
MARTIN MARGALA
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Ballistic Transport ◽  
High Mobility ◽  
Mean Free Path ◽  
Material System ◽  
Novel Device ◽  
Ballistic Electron ◽  
Ballistic Deflection Transistor ◽  
Channel Separation

The Ballistic Deflection Transistor (BDT) is a novel device that is based upon an electron steering and a ballistic deflection effect. Composed of an InGaAs - InAlAs heterostructure on an InP substrate, this material system provides a large mean free path and high mobility to support ballistic transport at room temperature. The planar nature of the device enables a two step lithography process, as well, implies a very low capacitance design. This transistor is unique in that no doping junction or barrier structure is employed. Rather, the transistor utilizes a two-dimensional electron gas (2DEG) to achieve ballistic electron transport in a gated microstructure, combined with asymmetric geometrical deflection. Motivated by reduced transit times, the structure can be operated such that current never stops flowing, but rather is only directed toward one of two output drain terminals. The BDT is unique in that it possesses both a positive and negative transconductance region. Experimental measurements have indicated that the transconductance of the device increases with applied drain-source voltage. DC measurements of prototype devices have verified small signal voltage gains of over 150, with transconductance values from 45 to 130 mS/mm depending upon geometry and bias. Gate-channel separation is currently 80nm, and allows for higher transconductance through scaling. The six terminal device enables a normally differential mode of operation, and provides two drain outputs. These outputs, depending on gate bias, are either complementary or non-complementary. This facilitates a wide variety of circuit design techniques. Given the ultralow capacitive design, initial estimates of ft, for the device fabricated with a 430nm gate width, are over a THz.

scholarly journals Microring Mixers and Tunable Filters in Silicon Photonics (Project Report 1201308-Y3)

2021 ◽  
Author(s):  
Shayan Mookherjee
Keyword(s):  
Silicon Photonics ◽  
Tunable Filters ◽  
Tunable Filter ◽  
Integrated Photonics ◽  
Project Report ◽  
The Third ◽  
Funded Project ◽  
On Chip ◽  
Quantum Photonics ◽  
Photonics Devices

The main goal of this NSF-funded project [1201308 - Year 3] is to develop integrated photonics devices based on silicon photonics which can be used for compact and efficient nonlinear classical and quantum photonics applications. During the third year of this project, we demonstrated the combination of an on-chip ring mixer and a tunable filter.

scholarly journals Reconfigurable photonics with on-chip single-photon detectors

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Samuel Gyger ◽  
Julien Zichi ◽  
Lucas Schweickert ◽  
Ali W. Elshaari ◽  
Stephan Steinhauer ◽  
...  
Keyword(s):  
Adaptive Control ◽  
Large Scale ◽  
Dynamic Range ◽  
Single Photon ◽  
Scale Up ◽  
Photon Detectors ◽  
Photonic Circuits ◽  
Single Photon Detectors ◽  
On Chip ◽  
Quantum Photonics

AbstractIntegrated quantum photonics offers a promising path to scale up quantum optics experiments by miniaturizing and stabilizing complex laboratory setups. Central elements of quantum integrated photonics are quantum emitters, memories, detectors, and reconfigurable photonic circuits. In particular, integrated detectors not only offer optical readout but, when interfaced with reconfigurable circuits, allow feedback and adaptive control, crucial for deterministic quantum teleportation, training of neural networks, and stabilization of complex circuits. However, the heat generated by thermally reconfigurable photonics is incompatible with heat-sensitive superconducting single-photon detectors, and thus their on-chip co-integration remains elusive. Here we show low-power microelectromechanical reconfiguration of integrated photonic circuits interfaced with superconducting single-photon detectors on the same chip. We demonstrate three key functionalities for photonic quantum technologies: 28 dB high-extinction routing of classical and quantum light, 90 dB high-dynamic range single-photon detection, and stabilization of optical excitation over 12 dB power variation. Our platform enables heat-load free reconfigurable linear optics and adaptive control, critical for quantum state preparation and quantum logic in large-scale quantum photonics applications.

A New Paradigm for On-chip Quantum Photonics: Highly Uniform Single Photon Source Arrays

2021 ◽  
Author(s):  
Jiefei Zhang ◽  
Qi Huang ◽  
Swarnabha Chattaraj ◽  
Lucas Jordao ◽  
Siyuan Lu ◽  
...  
Keyword(s):  
Single Photon ◽  
Single Photon Source ◽  
New Paradigm ◽  
On Chip ◽  
Quantum Photonics ◽  
Highly Uniform ◽  
Photon Source

On-chip integration of reconfigurable quantum photonics with superconducting photodetectors

2021 ◽  
Author(s):  
Samuel Gyger ◽  
Julien Zichi ◽  
Lucas Schweickert ◽  
Ali W. Elshaari ◽  
Stephan Steinhauer ◽  
...  
Keyword(s):  
On Chip ◽  
Quantum Photonics
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