Recent Progress in III-Nitride Tunnel Junction-Based Optoelectronics

2019 ◽  
Vol 28 (01n02) ◽  
pp. 1940012
Author(s):  
Zane Jamal-Eddine ◽  
Yuewei Zhang ◽  
Siddharth Rajan
Keyword(s):  
Tunnel Junction ◽  
Recent Progress ◽  
Tunnel Junctions ◽  
Optoelectronic Devices ◽  
Material System ◽  
Novel Device ◽  
Unique Material ◽  
Material Systems ◽  
Device Applications ◽  
Commercial Device

Tunnel junctions have garnered much interest from the III-Nitride optoelectronic research community within recent years. Tunnel junctions have seen applications in several material systems with relatively narrow bandgaps as compared to the III-Nitrides. Although they were initially dismissed as ineffective for commercial device applications due to high voltage penalty and on resistance owed to the wide bandgap nature of the III-Nitride material systems, recent development in the field has warranted further study of such tunnel junction enabled devices. They are of particular interest for applications in III-Nitride optoelectronic devices in which they can be used to enable novel device designs which could potentially address some of the most challenging physical obstacles presented with this unique material system. In this work we review the recent progress made on the study of III-Nitride tunnel junction-based optoelectronic devices and the challenges which are still faced in the field of study today.

scholarly journals Polarization-Dependent Optical Properties and Optoelectronic Devices of 2D Materials

Research ◽  
2020 ◽  
Vol 2020 ◽  
pp. 1-35
Author(s):  
Ziwei Li ◽  
Boyi Xu ◽  
Delang Liang ◽  
Anlian Pan
Keyword(s):  
Light Emission ◽  
2D Materials ◽  
Scientific Discovery ◽  
Optoelectronic Devices ◽  
Polarized Light ◽  
Optoelectronic Device ◽  
Raman Shift ◽  
Novel Device ◽  
Device Applications ◽  
New Material

The development of optoelectronic devices requires breakthroughs in new material systems and novel device mechanisms, and the demand recently changes from the detection of signal intensity and responsivity to the exploration of sensitivity of polarized state information. Two-dimensional (2D) materials are a rich family exhibiting diverse physical and electronic properties for polarization device applications, including anisotropic materials, valleytronic materials, and other hybrid heterostructures. In this review, we first review the polarized-light-dependent physical mechanism in 2D materials, then present detailed descriptions in optical and optoelectronic properties, involving Raman shift, optical absorption, and light emission and functional optoelectronic devices. Finally, a comment is made on future developments and challenges. The plethora of 2D materials and their heterostructures offers the promise of polarization-dependent scientific discovery and optoelectronic device application.

An intuitive review of supercapacitors with recent progress and novel device applications

2020 ◽  
Vol 31 ◽  
pp. 101652 ◽  
Author(s):  
Kummara Venkata Guru Raghavendra ◽  
Rajangam Vinoth ◽  
Kamran Zeb ◽  
Chandu V.V. Muralee Gopi ◽  
Sangaraju Sambasivam ◽  
...  
Keyword(s):  
Recent Progress ◽  
Novel Device ◽  
Device Applications

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

scholarly journals Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications

2021 ◽  
Vol 8 (2) ◽  
pp. 021308
Author(s):  
Lishu Zhang ◽  
Jun Zhou ◽  
Hui Li ◽  
Lei Shen ◽  
Yuan Ping Feng
Keyword(s):  
Recent Progress ◽  
Tunnel Junctions ◽  
2D Materials ◽  
Magnetic Tunnel Junctions

Reactive Ion Etching of GaSb, (Ai,Ga)Sb, and InAs for Novel Device Applications.

1990 ◽  
Vol 216 ◽  
Author(s):  
D.C. La Tulipe ◽  
D.J. Frank ◽  
H. Munekata
Keyword(s):  
Etch Rate ◽  
Reactive Ion Etching ◽  
Scanning Electron Micrographs ◽  
Electrical Characteristics ◽  
Ion Etching ◽  
Novel Device ◽  
Physical Sputtering ◽  
Chlorine Gas ◽  
Device Applications ◽  
Scanning Electron

ABSTRACT-Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. We have studied the reactive ion etching characteristics of GaSb, (AI,Ga)Sb, and InAs in both methane/ hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH4/H2, the etch rate of (AI,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200Å/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl2 was found to yield anisotropic profiles, with the etch rate of (AI,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to an InAs “stop layer” was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs-channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics.

Recent progress in flexible pressure sensor arrays: from design to applications

2018 ◽  
Vol 6 (44) ◽  
pp. 11878-11892 ◽  
Author(s):  
Jing Li ◽  
Rongrong Bao ◽  
Juan Tao ◽  
Yiyao Peng ◽  
Caofeng Pan
Keyword(s):  
Pressure Sensor ◽  
Recent Progress ◽  
Sensor Arrays ◽  
Device Applications ◽  
Flexible Pressure Sensor

This review summarizes the progress in flexible pressure sensor arrays from their fundamental designs to device applications.

Modelling interwall interactions in carbon nanotubes: fundamentals and device applications

2007 ◽  
Vol 365 (1861) ◽  
pp. 2893-2906 ◽  
Author(s):  
Elena Bichoutskaia
Keyword(s):  
Carbon Nanotubes ◽  
Relative Motion ◽  
Recent Progress ◽  
Self Regulation ◽  
Building Blocks ◽  
Great Promise ◽  
Low Friction ◽  
Fundamental Understanding ◽  
Device Applications ◽  
Physical Manipulation

Carbon nanotubes are the most commonly used ‘building blocks’ of modern nanotechnology. Their unique mechanical and electronic properties, stability and functionality show great promise in creating functional devices on the nanometre scale. One of the great challenges in using this scale is the ability of physical manipulation of the components, such as their positioning and assembling. Strong correlation between the structure and mechanical interactions of the walls of carbon nanotubes provides self-regulation of their relative motion. This can be further exploited in low-friction and high-stiffness devices. In this paper, we present a condensed overview of the recent progress in fundamental understanding of nanomechanical and nanoelectromechanical behaviour of carbon nanotubes and their applications in nanodevices.

Record low tunnel junction specific resistivity (< 3×10−4 Ωcm2) in GaN inter-band tunnel junctions

2012 ◽  
Author(s):  
Sriram Krishnamoorthy ◽  
Fatih Akyol ◽  
Jing Yang ◽  
Pil Sung Park ◽  
Roberto C Myers ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Tunnel Junctions ◽  
Specific Resistivity
Sign in / Sign up

Export Citation Format

Share Document