scholarly journals MoS2 memristor with photoresistive switching

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Wei Wang ◽  
Gennady N. Panin ◽  
Xiao Fu ◽  
Lei Zhang ◽  
P. Ilanchezhiyan ◽  
...  

Abstract A MoS2 nanosphere memristor with lateral gold electrodes was found to show photoresistive switching. The new device can be controlled by the polarization of nanospheres, which causes resistance switching in an electric field in the dark or under white light illumination. The polarization charge allows to change the switching voltage of the photomemristor, providing its multi-level operation. The device, polarized at a voltage 6 V, switches abruptly from a high resistance state (HRSL6) to a low resistance state (LRSL6) with the On/Off resistance ratio of about 10 under white light and smooth in the dark. Analysis of device conductivity in different resistive states indicates that its resistive state could be changed by the modulation of the charge in an electric field in the dark or under light, resulting in the formation/disruption of filaments with high conductivity. A MoS2 photomemristor has great potential as a multifunctional device designed by using cost-effective fabrication techniques.

2008 ◽  
Vol 47 (17) ◽  
pp. 3080 ◽  
Author(s):  
Javier García ◽  
Vicente Micó ◽  
Dan Cojoc ◽  
Zeev Zalevsky

Author(s):  
A. P. Kovács ◽  
G. Kurdi ◽  
K. Osvay ◽  
R. Szipöcs ◽  
J. Hebling ◽  
...  

2020 ◽  
Vol 20 (5) ◽  
pp. 3283-3286 ◽  
Author(s):  
Yuehua An ◽  
Xia Shen ◽  
Yuying Hao ◽  
Pengfei Guo ◽  
Weihua Tang

Conductive filament mechanism can explain major resistance switching behaviors. The forming/deforming of the filaments define the high/low resistance states. The ratio of high/low resistance depends on the characterization of the filaments. In many oxide systems, the oxygen vacancies are important to forming the conductive filaments for the resistance switching behaviors. As ultrawide band gap semiconductor, Ga2O3 has very high resistance for its high resistance state, while its low resistive state has relative high resistance, which normally results in low ratio of high/low resistance. In this letter, we report a high ratio of high/low resistance by ultraviolet radiation. The I–V characteristics of Au/Ti/β-Ga2O3/W sandwich structure device shows that the HRS to LRS ratio of 5 orders is achieved.


2020 ◽  
Vol 8 (9) ◽  
pp. 3000-3009 ◽  
Author(s):  
Chang Feng ◽  
Zhuoyuan Chen ◽  
Jiangping Jing ◽  
Jian Hou

ZnO/Ag/Ag2O accelerates phenol degradation through different intermediate processes under white light illumination.


2019 ◽  
Vol 7 (46) ◽  
pp. 14717-14724 ◽  
Author(s):  
Jiaming Wu ◽  
Shuxian Wang ◽  
Shuxin Liu ◽  
Shuwei Ma ◽  
Guojian Jing ◽  
...  

The CDs doped boehmite composite (CDs@AlOOH) is directly achieved through a facile, low-cost and green one-step decomposition route with tunable fluorescence emission and long-term thermal stability.


2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Congli Wang ◽  
Qiang Fu ◽  
Xiong Dun ◽  
Wolfgang Heidrich

Abstract Phase imaging techniques are an invaluable tool in microscopy for quickly examining thin transparent specimens. Existing methods are limited to either simple and inexpensive methods that produce only qualitative phase information (e.g. phase contrast microscopy, DIC), or significantly more elaborate and expensive quantitative methods. Here we demonstrate a low-cost, easy to implement microscopy setup for quantitative imaging of phase and bright field amplitude using collimated white light illumination.


2011 ◽  
Vol 13 (11) ◽  
pp. 115302 ◽  
Author(s):  
Carolin Wagner ◽  
Tim Stangner ◽  
Christof Gutsche ◽  
Olaf Ueberschär ◽  
Friedrich Kremer

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