Inductively coupled plasma chemistry examinations with visible acousto-optic tunable filter hyperspectral imaging

2004 ◽  
Vol 19 (9) ◽  
pp. 1151 ◽  
Author(s):  
Ling Bei ◽  
Kirk L. Duffin ◽  
Jon. W. Carnahan
Keyword(s):  
Hyperspectral Imaging ◽  
Inductively Coupled Plasma ◽  
Plasma Chemistry ◽  
Tunable Filter ◽  
Inductively Coupled

scholarly journals Mechanical Stress in InP Structures Etched in an Inductively Coupled Plasma Reactor with Ar/Cl2/CH4 Plasma Chemistry

2018 ◽  
Vol 47 (9) ◽  
pp. 4964-4969 ◽  
Author(s):  
Jean-Pierre Landesman ◽  
Daniel T. Cassidy ◽  
Marc Fouchier ◽  
Erwine Pargon ◽  
Christophe Levallois ◽  
...  
Keyword(s):  
Mechanical Stress ◽  
Inductively Coupled Plasma ◽  
Plasma Reactor ◽  
Plasma Chemistry ◽  
Inductively Coupled ◽  
Inductively Coupled Plasma Reactor

Aotfs as Atomic Spectrometers: Basic Characteristics

1996 ◽  
Vol 50 (7) ◽  
pp. 885-892 ◽  
Author(s):  
Greg Fulton ◽  
Gary Horlick
Keyword(s):  
Inductively Coupled Plasma ◽  
Narrow Band ◽  
Atomic Emission ◽  
Peak Position ◽  
Tunable Filter ◽  
Inductively Coupled ◽  
Half Height ◽  
Light Filters ◽  
Basic Characteristics ◽  
Electronically Tunable

An electronic spectrometer based on an acousto-optic tunable filter (AOTF) is presented. These devices are electronically tunable, narrow-band light filters with no moving parts. The wavelength range from 350 to 600 nm can be covered with a single device, the entire spectrum is scanned in less than 1 s, and any wavelength can be randomly accessed in 0.1 ms. The resolution [full width at half-height (FWHH)] was determined to be 0.22 nm at 361 nm, and the standard deviation of peak position was usually less than 0.03 nm. Under software control, the AOTF can be stationary on a line, peak-hop between any 20 different lines, hop between 20 regions of any size, scan a spectrum, or operate as a wavelength modulation spectrometer. Operation of the spectrometer is illustrated by using hollow cathode and inductively coupled plasma atomic emission sources.

GaN Etching in BCl3/Cl2 Plasmas

1998 ◽  
Vol 512 ◽  
Author(s):  
R. J. Shul ◽  
C. I. H. Ashby ◽  
C. G. Willison ◽  
L. Zhang ◽  
J. Han ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Plasma Chemistry ◽  
High Plasma ◽  
High Density ◽  
Chamber Pressure ◽  
Plasma Etch ◽  
Source Power ◽  
Inductively Coupled ◽  
High Volatility ◽  
Gan Etching

ABSTRACTGaN etching can be affected by a wide variety of parameters including plasma chemistry and plasma density. Chlorine-based plasmas have been the most widely used plasma chemistries to etch GaN due to the high volatility of the GaClx and NClx etch products. The source of Cl and the addition of secondary gases can dramatically influence the etch characteristics primarily due to their effect on the concentration of reactive Cl generated in the plasma. In addition, high-density plasma etch systems have yielded high quality etching of GaN due to plasma densities which are 2 to 4 orders of magnitude higher than reactive ion etch (RIE) plasma systems. The high plasma densities enhance the bond breaking efficiency of the GaN, the formation of volatile etch products, and the sputter desorption of the etch products from the surface. In this study, we report GaN etch results for a high-density inductively coupled plasma (ICP) as a function of BCl3:Cl2 flow ratio, dc-bias, chamber pressure, and ICP source power. GaN etch rates ranging from ∼100 Å/min to > 8000 Å/min were obtained with smooth etch morphology and anisotropic profiles.

Modeling of the plasma chemistry and plasma–surface interactions in reactive plasmas

2010 ◽  
Vol 82 (6) ◽  
pp. 1283-1299 ◽  
Author(s):  
Annemie Bogaerts ◽  
Christophe De Bie ◽  
Maxie Eckert ◽  
Violeta Georgieva ◽  
Tom Martens ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Barrier Discharge ◽  
Plasma Chemistry ◽  
Value Added ◽  
Md Simulations ◽  
Surface Interactions ◽  
Plasma Surface ◽  
Fluid Modeling ◽  
Inductively Coupled ◽  
Plasma Surface Interactions

In this paper, an overview is given of modeling activities going on in our research group, for describing the plasma chemistry and plasma–surface interactions in reactive plasmas. The plasma chemistry is calculated by a fluid approach or by hybrid Monte Carlo (MC)–fluid modeling. An example of both is illustrated in the first part of the paper. The example of fluid modeling is given for a dielectric barrier discharge (DBD) in CH4/O2, to describe the partial oxidation of CH4 into value-added chemicals. The example of hybrid MC–fluid modeling concerns an inductively coupled plasma (ICP) etch reactor in Ar/Cl2/O2, including also the description of the etch process. The second part of the paper deals with the treatment of plasma–surface interactions on the atomic level, with molecular dynamics (MD) simulations or a combination of MD and MC simulations.

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