A very facile, low temperature, one-step route to in situ fabricate copper sulfide nanosheet thin films

CrystEngComm ◽  
2011 ◽  
Vol 13 (20) ◽  
pp. 6212 ◽  
Author(s):  
Yan Lei ◽  
Huimin Jia ◽  
Zhi Zheng ◽  
Yuanhao Gao ◽  
Xuewu Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Copper Sulfide ◽  
One Step

In situ one-step synthesis of p-type copper oxide for low-temperature, solution-processed thin-film transistors

2017 ◽  
Vol 5 (10) ◽  
pp. 2524-2530 ◽  
Author(s):  
Ao Liu ◽  
Shengbin Nie ◽  
Guoxia Liu ◽  
Huihui Zhu ◽  
Chundan Zhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Naoh Solution ◽  
Temperature Solution ◽  
One Step ◽  
P Type

Solution-processed p-type Cu2O thin films were fabricated via in-situ reaction of CuI film in NaOH solution and their applications in thin-film transistors were successfully demonstrated.

Sulfurization Engineering of One‐Step Low‐Temperature MoS 2 and WS 2 Thin Films for Memristor Device Applications

2021 ◽  
pp. 2100515
Author(s):  
Yuqian Gu ◽  
Martha I. Serna ◽  
Sivasakthya Mohan ◽  
Alejandra Londoño‐Calderon ◽  
Taimur Ahmed ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Device Applications ◽  
One Step ◽  
Memristor Device

A Low Temperature Vaporization of Pb(THD)2 with NH3

1994 ◽  
Vol 361 ◽  
Author(s):  
June Key Lee ◽  
Wan In Lee ◽  
Seshu B. Desu
Keyword(s):  
Molecular Structure ◽  
Thin Films ◽  
Low Temperature ◽  
Elemental Analysis ◽  
Carrier Gas

ABSTRACTPb(THD)2 is one of the most popular CVD precursors for lead. It was found in this study that the volatility of Pb(THD)2 can be considerably improved by using ammonia as a carrier gas. An adduct between Pb(THD)2 and NH3 is generated in-situ, when the NH3 carrier gas is passed through the bubbler containing Pb(THD)2. The ammoniated precursor was isolated and its molecular structure was characterized by elemental analysis, infrared and NM.R. PbO thin films could be prepared with this precursor system while maintaining the bubbler temperature at 110° C, which is considerably lower than the temperature used with the Pb(THD)2 precursor in the commonly used carrier gas.

scholarly journals In Situ GISAXS Investigation of Low-Temperature Aging in Oriented Surfactant-Mesostructured Titania Thin Films

2015 ◽  
Vol 119 (40) ◽  
pp. 22970-22984 ◽  
Author(s):  
Suraj Nagpure ◽  
Saikat Das ◽  
Ravinder K. Garlapalli ◽  
Joseph Strzalka ◽  
Stephen E. Rankin
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Low Temperature Aging ◽  
Temperature Aging

In-situ growth of superconducting MgB2 thin films by HPCVD method at low temperature

2007 ◽  
Vol 467 (1-2) ◽  
pp. 1-3 ◽  
Author(s):  
J. Yang ◽  
S. Wang ◽  
F.S. Yang ◽  
Z.P. Zhang ◽  
Z. Ding ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
In Situ Growth ◽  
Mgb2 Thin Films

Low-Temperature One-Step Growth of AlON Thin Films with Homogenous Nitrogen-Doping Profile by Plasma-Enhanced Atomic Layer Deposition

2017 ◽  
Vol 9 (44) ◽  
pp. 38662-38669 ◽  
Author(s):  
Hong-Yan Chen ◽  
Hong-Liang Lu ◽  
Jin-Xin Chen ◽  
Feng Zhang ◽  
Xin-Ming Ji ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Nitrogen Doping ◽  
Atomic Layer ◽  
Doping Profile ◽  
Layer Deposition ◽  
One Step ◽  
Step Growth
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