scholarly journals Dynamic nanocrystal response and high temperature growth of carbon nanotube–ferroelectric hybrid nanostructure

Nanoscale ◽  
2014 ◽  
Vol 6 (2) ◽  
pp. 1064-1070 ◽  
Author(s):  
Ashok Kumar ◽  
J. F. Scott ◽  
R. S. Katiyar
Genetics ◽  
1989 ◽  
Vol 123 (4) ◽  
pp. 625-633 ◽  
Author(s):  
M B Schmid ◽  
N Kapur ◽  
D R Isaacson ◽  
P Lindroos ◽  
C Sharpe

Abstract We have isolated 440 mutants of Salmonella typhimurium that show temperature-sensitive growth on complex medium at 44 degrees. Approximately 16% of the mutations in these strains have been mapped to 17 chromosomal locations; two of these chromosomal locations seem to include several essential genes. Genetic analysis of the mutations suggests that the collection saturates the genes readily mutable to a ts lethal phenotype in S. typhimurium. Physiological characteristics of the ts lethal mutants were tested: 6% of the mutants can grow at high temperature under anaerobic conditions, 17% can grow when the medium includes 0.5 M KCl, and 9% of the mutants die after a 2-hr incubation at the nonpermissive temperature. Most ts lethal mutations in this collection probably affect genes required for growth at all temperatures (not merely during high temperature growth) since Tn10 insertions that cause a temperature-sensitive lethal phenotype are rare.


1984 ◽  
Vol 68 (1) ◽  
pp. 169-175 ◽  
Author(s):  
Tetsuo Soga ◽  
Yasuhito Takahashi ◽  
Shiro Sakai ◽  
Masayoshi Umeno

2008 ◽  
Vol 1068 ◽  
Author(s):  
Ewa Dumiszewska ◽  
Wlodek Strupinski ◽  
Piotr Caban ◽  
Marek Wesolowski ◽  
Dariusz Lenkiewicz ◽  
...  

ABSTRACTThe influence of growth temperature on oxygen incorporation into GaN epitaxial layers was studied. GaN layers deposited at low temperatures were characterized by much higher oxygen concentration than those deposited at high temperature typically used for epitaxial growth. GaN buffer layers (HT GaN) about 1 μm thick were deposited on GaN nucleation layers (NL) with various thicknesses. The influence of NL thickness on crystalline quality and oxygen concentration of HT GaN layers were studied using RBS and SIMS. With increasing thickness of NL the crystalline quality of GaN buffer layers deteriorates and the oxygen concentration increases. It was observed that oxygen atoms incorporated at low temperature in NL diffuse into GaN buffer layer during high temperature growth as a consequence GaN NL is the source for unintentional oxygen doping.


2013 ◽  
Vol 716 ◽  
pp. 373-378
Author(s):  
Qian Zhang ◽  
Xin Bao Gao ◽  
Tian Peng Li

Carbon nanotube/expanded graphite composite material was prepared by expanding the mixture of multi-walled carbon nanotubes and expansible graphite under the condition of high temperature. The microstructure and composition was studied by using SEM and XRD. The study shows that the tubular structure of carbon nanotubes in the composite material is changed by high temperature expanding process, and the microstructure is different with different expanding temperature. When the expanding temperature was 900°C, carbon nanotubes transformed, then attached to the surface of expanded graphite flake, so carbon nanotubes and expanding graphite combined strongly; globular carbon nanotubes attached to the surface of expanded graphite flake at the temperature of 700°C, both were combined much more strongly; carbon nanotubes retained the tube structure at the temperature of 500°C, combination was looser due to the simple physical adsorption. The result shows that the choice of expanding temperature has an important effect on microstructure of carbon nanotube/expanded graphite composite material.


Carbon ◽  
2019 ◽  
Vol 142 ◽  
pp. 291-299 ◽  
Author(s):  
Sanjit Bhowmick ◽  
Sehmus Ozden ◽  
Rafael A. Bizão ◽  
Leonardo Dantas Machado ◽  
S.A. Syed Asif ◽  
...  

2008 ◽  
Vol 310 (17) ◽  
pp. 4016-4019 ◽  
Author(s):  
Ken-ichi Eriguchi ◽  
Takako Hiratsuka ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Akinori Koukitu

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