High temperature growth rate in MOCVD growth of AlGaAs

1984 ◽  
Vol 68 (1) ◽  
pp. 169-175 ◽  
Author(s):  
Tetsuo Soga ◽  
Yasuhito Takahashi ◽  
Shiro Sakai ◽  
Masayoshi Umeno
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Temperature Growth ◽  
Mocvd Growth

Competing Kinetic and Thermodynamic Processes in the Growth and Ordering of Ga0.5In0.5P

1993 ◽  
Vol 312 ◽  
Author(s):  
Sarah R. Kurtz ◽  
J. M. Olson ◽  
D. J. Arent ◽  
A. E. Kibbler ◽  
K. A. Bertness
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Band Gap ◽  
Growth Temperature ◽  
Growth Parameter ◽  
High Growth ◽  
High Growth Rate ◽  
Temperature Growth ◽  
Rate Region ◽  
Thermodynamic Processes

AbstractThe band gap of Ga0.5In0.5P is studied as a function of growth temperature, growth rate, and substrate misorientation. As each of these parameters is independently varied the band gap first decreases, then increases, resulting in “U” shaped curves. Each “U” shaped curve shifts if any other growth parameter is varied. The data presented here can be divided into two regions of parameter space. In the low temperature, low substrate misorientation, high growth rate region, the band gap is shown to decrease with increasing growth temperature, decreasing growth rate, and increasing substrate misorientation. In the high temperature, high substrate misorientation, low growth rate region, the opposite trends are observed. The implications of these data on the ordering mechanism are discussed.

scholarly journals Genetic analysis of temperature-sensitive lethal mutants of Salmonella typhimurium.

Genetics ◽  
1989 ◽  
Vol 123 (4) ◽  
pp. 625-633 ◽  
Author(s):  
M B Schmid ◽  
N Kapur ◽  
D R Isaacson ◽  
P Lindroos ◽  
C Sharpe
Keyword(s):  
High Temperature ◽  
Genetic Analysis ◽  
Salmonella Typhimurium ◽  
Complex Medium ◽  
Temperature Sensitive ◽  
Nonpermissive Temperature ◽  
Anaerobic Conditions ◽  
Temperature Growth ◽  
Lethal Phenotype ◽  
Lethal Mutations

Abstract We have isolated 440 mutants of Salmonella typhimurium that show temperature-sensitive growth on complex medium at 44 degrees. Approximately 16% of the mutations in these strains have been mapped to 17 chromosomal locations; two of these chromosomal locations seem to include several essential genes. Genetic analysis of the mutations suggests that the collection saturates the genes readily mutable to a ts lethal phenotype in S. typhimurium. Physiological characteristics of the ts lethal mutants were tested: 6% of the mutants can grow at high temperature under anaerobic conditions, 17% can grow when the medium includes 0.5 M KCl, and 9% of the mutants die after a 2-hr incubation at the nonpermissive temperature. Most ts lethal mutations in this collection probably affect genes required for growth at all temperatures (not merely during high temperature growth) since Tn10 insertions that cause a temperature-sensitive lethal phenotype are rare.

scholarly journals Vegetative Reproduction Is More Advantageous Than Sexual Reproduction in a Canopy-Forming Clonal Macroalga under Ocean Warming Accompanied by Oligotrophication and Intensive Herbivory

Plants ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 1522
Author(s):  
Hikaru Endo ◽  
Toru Sugie ◽  
Yukiko Yonemori ◽  
Yuki Nishikido ◽  
Hikari Moriyama ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Nutrient Availability ◽  
Vegetative Reproduction ◽  
Ocean Warming ◽  
Regeneration Ability ◽  
Combined Effects ◽  
Regeneration Rate ◽  
Fish Herbivory ◽  
C 30

Ocean warming and the associated changes in fish herbivory have caused polarward distributional shifts in the majority of canopy-forming macroalgae that are dominant in temperate Japan, but have little effect on the alga Sargassum fusiforme. The regeneration ability of new shoots from holdfasts in this species may be advantageous in highly grazed environments. However, little is known about the factors regulating this in Sargassum species. Moreover, holdfast tolerance to high-temperature and nutrient-poor conditions during summer has rarely been evaluated. In the present study, S. fusiforme holdfast responses to the combined effects of temperature and nutrient availability were compared to those of sexually reproduced propagules. The combined effects of holdfast fragmentation and irradiance on regeneration were also evaluated. Propagule growth rate values changed from positive to negative under the combination of elevated temperature (20 °C–30 °C) and reduced nutrient availability, whereas holdfasts exhibited a positive growth rate even at 32 °C in nutrient-poor conditions. The regeneration rate increased with holdfast fragmentation (1 mm segments), but was unaffected by decreased irradiance. These results suggest that S. fusiforme holdfasts have a higher tolerance to high-temperature and nutrient-poor conditions during summer than propagules, and regenerate new shoots even if 1-mm segments remain in shaded refuges for fish herbivory avoidance.

The Influence of Growth Temperature on Oxygen Concentration in GaN Buffer Layer

2008 ◽  
Vol 1068 ◽  
Author(s):  
Ewa Dumiszewska ◽  
Wlodek Strupinski ◽  
Piotr Caban ◽  
Marek Wesolowski ◽  
Dariusz Lenkiewicz ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Oxygen Concentration ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Buffer Layers ◽  
Crystalline Quality ◽  
Temperature Growth ◽  
Gan Buffer Layer

ABSTRACTThe influence of growth temperature on oxygen incorporation into GaN epitaxial layers was studied. GaN layers deposited at low temperatures were characterized by much higher oxygen concentration than those deposited at high temperature typically used for epitaxial growth. GaN buffer layers (HT GaN) about 1 μm thick were deposited on GaN nucleation layers (NL) with various thicknesses. The influence of NL thickness on crystalline quality and oxygen concentration of HT GaN layers were studied using RBS and SIMS. With increasing thickness of NL the crystalline quality of GaN buffer layers deteriorates and the oxygen concentration increases. It was observed that oxygen atoms incorporated at low temperature in NL diffuse into GaN buffer layer during high temperature growth as a consequence GaN NL is the source for unintentional oxygen doping.

High-temperature growth of thick AlN layers on sapphire (0001) substrates by solid source halide vapor-phase epitaxy

2008 ◽  
Vol 310 (17) ◽  
pp. 4016-4019 ◽  
Author(s):  
Ken-ichi Eriguchi ◽  
Takako Hiratsuka ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Akinori Koukitu
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Temperature Growth

Temperature-Growth Relations and Genetic Diversity of A2 Mating-Type Isolates of Phytophthora cinnamomi in Australia

1974 ◽  
Vol 22 (2) ◽  
pp. 231 ◽  
Author(s):  
CJ Shepherd ◽  
BH Pratt
Keyword(s):  
Growth Rate ◽  
First Generation ◽  
Phytophthora Cinnamomi ◽  
Phytophthora Species ◽  
Temperature Growth ◽  
Field Isolates ◽  
Place Of Origin ◽  
Successive Generations ◽  
Cardinal Temperatures ◽  
Range Of Values

Determinations of cardinal temperatures for growth on various media of 50 Australian isolates of Phytophthova cinnamomi showed that growth did not occur outside the range 5-35°C. The range of temperatures at which growth optima occurred varied according to the isolate and medium used and encompassed the whole range of values reported by overseas authors. Growth rates of 361 isolates on corn meal agar at 25°C varied within the range 4.7-10.5 mm/day. There was no correlation between optimum temperature and whether isolates were slow- or fastgrowing or their place of origin. Fast-growing isolates (6-11 mm/day) were obtained from all States, but slower-growing isolates (<6 mm/day) were obtained only from southern and western regions of Australia. Populations from different regions of Australia exhibited different growth rate parameters. The variability of mycelial isolates in culture was studied by examining differences in growth rate among replicated parent, single-zoospore, single-zoosporangium and single terminal-hyphal isolates. Extensive variation was found among first generation single-zoospore progenies of field isolates, with lesser variation among progeny of single zoosporangia, terminal hyphal cultures and second and third generation zoospore derivatives. The origin of this variation is discussed and it is suggested that field isolates are heterokaryotic, since zoospores proved to be predominantly uninucleate. When various Phytophthora species were incubated at temperatures above those at which growth was possible and then returned to 25°C, their subsequent ability to resume growth depended on the particular time-temperature combination used. Considerable variation of response was found among a number of isolates of P. cinnamomi and, following the establishment of single zoospore isolates, the potential variability of field isolates was shown to persist through successive generations of zoospore propagation. It is suggested that a cytoplasmic mechanism of inheritance may be responsible for this variation.

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