scholarly journals High switching speed and coloration efficiency of titanium-doped vanadium oxide thin film electrochromic devices

2013 ◽  
Vol 1 (44) ◽  
pp. 7380 ◽  
Author(s):  
Yingxi Lu ◽  
Liang Liu ◽  
Daniel Mandler ◽  
Pooi See Lee
2014 ◽  
Vol 909 ◽  
pp. 91-94
Author(s):  
Jun Gou ◽  
Hui Ling Tai ◽  
Jun Wang ◽  
De En Gu ◽  
Xiong Bang Wei ◽  
...  

A high selectivity patterning technology of vanadium oxide (VOx) thin film was suggested in this paper. VOxthin film was etched through a photoresist (PR) mask using Cl/N based gases in a reactive ion etching (RIE) system. Taguchi method was used for process design to identify factors that influence the patterning and find optimum process parameters. Experimental results suggested that RF power was the largest contribution factor for VOxetch rate, PR selectivity and uniformity on 6 inch diameter wafer. Uniformity and PR selectivity were improved by introducing a small amount of N2. High resolution and low roughness patterning transfer was achieved with a non uniformity of 2.4 %, an VOxetch rate of 74 nm/min, a PR selectivity of 0.96, a Si3N4selectivity of 5 and a SiO2selectivity of 10.


2010 ◽  
Vol 25 (3) ◽  
pp. 422-426 ◽  
Author(s):  
Tsung-Han Yang ◽  
Chunming Jin ◽  
Ravi Aggarwal ◽  
R.J. Narayan ◽  
Jay Narayan

We report the characteristics of epitaxial growth and properties of vanadium oxide (VO2) thin films on sapphire (0001) substrates. Pulsed laser deposition was used to grow (002) oriented VO2 films on sapphire (0001). Transmission electron microscopy studies showed that the orientation relationship between the substrate and the thin film is: (002)f2∥(0006)sub3 and [010]f2 ∥sub. It was also established that VO2 has three different orientations in the film plane which are rotated by 60° from each other. The epitaxial growth of vanadium oxide on sapphire (0001) has been explained in the framework of domain matching epitaxy (DME). Electrical resistivity measurements as a function of temperature showed a sharp transition with a hysteresis width ˜5 °C, and large resistance change (˜1.5 × 104) from the semiconductor phase to the metal phase. It is interesting to note that in spite of large angle twin boundaries in these VO2 films, the SMT characteristics are better than those observed for polycrystalline films. The higher width of thermal hysteresis for the VO2 film on c-sapphire compared to a bulk single VO2 crystal and a single-crystal VO2 film on r-sapphire can be attributed to the existence of these large-angle twin grain boundaries. These findings can provide insight into the phase transformation characteristics of VO2, which has important applications in switching and memory devices.


2016 ◽  
Vol 52 (10) ◽  
pp. 827-828 ◽  
Author(s):  
M.F. Zia ◽  
M. Abdel‐Rahman ◽  
M. Alduraibi ◽  
B. Ilahi ◽  
A. Alasaad

2013 ◽  
Vol 22 (3) ◽  
pp. 037201 ◽  
Author(s):  
Xiao-Ying Wei ◽  
Ming Hu ◽  
Kai-Liang Zhang ◽  
Fang Wang ◽  
Jin-Shi Zhao ◽  
...  

2011 ◽  
Vol 104 (4) ◽  
pp. 1025-1030 ◽  
Author(s):  
U. Kürüm ◽  
R. M. Öksüzoğlu ◽  
M. Yüksek ◽  
H. G. Yaglioglu ◽  
H. Çınar ◽  
...  

Author(s):  
Malika Berouaken ◽  
Chafiaa Yaddadene ◽  
Katia Chebout ◽  
Maha Ayat ◽  
Hamid Menari ◽  
...  

Langmuir ◽  
2018 ◽  
Vol 34 (8) ◽  
pp. 2741-2747 ◽  
Author(s):  
Alexey A. Mikhaylov ◽  
Alexander G. Medvedev ◽  
Dmitry A. Grishanov ◽  
Sergey Sladkevich ◽  
Jenny Gun ◽  
...  

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