Study on Reactive Ion Etching of Vanadium Oxide Thin Film by Taguchi Method

2014 ◽  
Vol 909 ◽  
pp. 91-94
Author(s):  
Jun Gou ◽  
Hui Ling Tai ◽  
Jun Wang ◽  
De En Gu ◽  
Xiong Bang Wei ◽  
...  
Keyword(s):  
Thin Film ◽  
Taguchi Method ◽  
Vanadium Oxide ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Oxide Thin Film ◽  
Optimum Process ◽  
Rf Power ◽  
Ion Etching ◽  
Vanadium Oxide Thin Film

A high selectivity patterning technology of vanadium oxide (VOx) thin film was suggested in this paper. VOxthin film was etched through a photoresist (PR) mask using Cl/N based gases in a reactive ion etching (RIE) system. Taguchi method was used for process design to identify factors that influence the patterning and find optimum process parameters. Experimental results suggested that RF power was the largest contribution factor for VOxetch rate, PR selectivity and uniformity on 6 inch diameter wafer. Uniformity and PR selectivity were improved by introducing a small amount of N2. High resolution and low roughness patterning transfer was achieved with a non uniformity of 2.4 %, an VOxetch rate of 74 nm/min, a PR selectivity of 0.96, a Si3N4selectivity of 5 and a SiO2selectivity of 10.

Characteristics of Indium-Tin Oxide Thin Film Etched by Reactive Ion Etching

1994 ◽  
Vol 33 (Part 1, No. 12B) ◽  
pp. 7057-7060 ◽  
Author(s):  
Meiso Yokoyama ◽  
Jiin Wen Li ◽  
Shui Hsiang Su ◽  
Yan Kuin Su
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Reactive Ion Etching ◽  
Oxide Thin Film ◽  
Ion Etching

On growth of epitaxial vanadium oxide thin film on sapphire (0001)

2010 ◽  
Vol 25 (3) ◽  
pp. 422-426 ◽  
Author(s):  
Tsung-Han Yang ◽  
Chunming Jin ◽  
Ravi Aggarwal ◽  
R.J. Narayan ◽  
Jay Narayan
Keyword(s):  
Thin Film ◽  
Vanadium Oxide ◽  
Epitaxial Growth ◽  
Thermal Hysteresis ◽  
Large Angle ◽  
Film Plane ◽  
Oxide Thin Film ◽  
Resistance Change ◽  
Transmission Electron ◽  
Vanadium Oxide Thin Film

We report the characteristics of epitaxial growth and properties of vanadium oxide (VO2) thin films on sapphire (0001) substrates. Pulsed laser deposition was used to grow (002) oriented VO2 films on sapphire (0001). Transmission electron microscopy studies showed that the orientation relationship between the substrate and the thin film is: (002)f2∥(0006)sub3 and [010]f2 ∥sub. It was also established that VO2 has three different orientations in the film plane which are rotated by 60° from each other. The epitaxial growth of vanadium oxide on sapphire (0001) has been explained in the framework of domain matching epitaxy (DME). Electrical resistivity measurements as a function of temperature showed a sharp transition with a hysteresis width ˜5 °C, and large resistance change (˜1.5 × 104) from the semiconductor phase to the metal phase. It is interesting to note that in spite of large angle twin boundaries in these VO2 films, the SMT characteristics are better than those observed for polycrystalline films. The higher width of thermal hysteresis for the VO2 film on c-sapphire compared to a bulk single VO2 crystal and a single-crystal VO2 film on r-sapphire can be attributed to the existence of these large-angle twin grain boundaries. These findings can provide insight into the phase transformation characteristics of VO2, which has important applications in switching and memory devices.

Synthesis and electrical characterisation of vanadium oxide thin film thermometer for microbolometer applications

2016 ◽  
Vol 52 (10) ◽  
pp. 827-828 ◽  
Author(s):  
M.F. Zia ◽  
M. Abdel‐Rahman ◽  
M. Alduraibi ◽  
B. Ilahi ◽  
A. Alasaad
Keyword(s):  
Thin Film ◽  
Vanadium Oxide ◽  
Oxide Thin Film ◽  
Vanadium Oxide Thin Film

Analysis of the resistive switching behaviors of vanadium oxide thin film

2013 ◽  
Vol 22 (3) ◽  
pp. 037201 ◽  
Author(s):  
Xiao-Ying Wei ◽  
Ming Hu ◽  
Kai-Liang Zhang ◽  
Fang Wang ◽  
Jin-Shi Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Vanadium Oxide ◽  
Resistive Switching ◽  
Oxide Thin Film ◽  
Vanadium Oxide Thin Film

Reactive ion Etching of PbZrxTi1−xO3 and Ruo2 Tein Films

1993 ◽  
Vol 310 ◽  
Author(s):  
Dilip P. Vijay ◽  
Seshu B. Desu ◽  
Wei Pan
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Gas Pressure ◽  
Limiting Factor ◽  
Rf Power ◽  
Ion Etching ◽  
Pzt Thin Films ◽  
Etch Rates

AbstractIn this work, we have identified a suitable etch gas (CCI2,F2 ) for Reactive Ion Etching (RIE) of PZT thin films on RuO2 electrodes. The etch rate and anisotropy have been studied as a function of etching conditions. The effect of gas pressure, RF power and O2 concentration on the etch rate have been determined. It was found that ion bombardment effects are primarily responsible for the etching of both PZT and RuO2 thin films. Etch rates of the order of 20-30 nm/min were obtained for PZT thin films under low gas pressure and high RF power conditions. The etch residues and the relative etch rates of the components of the PZT solid solution were determined using XPS. The results show that the etching of PbO is the limiting factor in the etch process. For RuO2 thin films, etch rates of the order of 8-10 nm/min were obtained when O2 was added to the etch gas.

Reactive Ion Etching of TaSix in a CF4-O2 Discharge

1991 ◽  
Vol 240 ◽  
Author(s):  
C. P. Chen ◽  
K. S. Din ◽  
F. S. Huang
Keyword(s):  
Total Pressure ◽  
Etch Rate ◽  
Gas Flow ◽  
Reactive Ion Etching ◽  
Rf Power ◽  
Ion Etching ◽  
Gaas Mesfet ◽  
Maximum Value ◽  
Oxygen Percentage ◽  
Sem Micrograph

ABSTRACTIn the self-alignment technology for GaAs MESFET, the pattern technique for refractory suicide gate is needed. Reactive ion etching (RIE) of TaSix on GaAs has been performed in a mixture of CF4 and O2 Etching properties have been studied as function of oxygen percentage, total pressure and power. The samples were then examined in Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) to understand the surface morphology and constitution. It is found that the etch rate of TaSixincreased with increasing oxygen percentage initially, reached a maximum value near 10∼15% O2, then started to decrease with increasing oxygen at applied power 100 watt, pressure 50 mtorr, and total gas flow 40 seem. This etch rate also increases with RF power and total pressure in CF4 + O2 15% gas at gas flow rate 40 sccm. For GaAs etching, the rate is independent of oxygen percentage. This etch rate of GaAs also increases with power, but decreases with total pressure. Meanwhile, the SEM micrograph shows no undercut for sample after RIE at the applied power 140 watt with the pressure of 20 mtorr.

The third order nonlinear optical characteristics of amorphous vanadium oxide thin film

2011 ◽  
Vol 104 (4) ◽  
pp. 1025-1030 ◽  
Author(s):  
U. Kürüm ◽  
R. M. Öksüzoğlu ◽  
M. Yüksek ◽  
H. G. Yaglioglu ◽  
H. Çınar ◽  
...  
Keyword(s):  
Thin Film ◽  
Vanadium Oxide ◽  
Nonlinear Optical ◽  
Optical Characteristics ◽  
Oxide Thin Film ◽  
Third Order ◽  
The Third ◽  
Vanadium Oxide Thin Film
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