A high-temperature resistant polyimide gate insulator surface-modified with a YOx interlayer for high-performance, solution-processed Li-doped ZnO thin-film transistors

2014 ◽  
Vol 2 (12) ◽  
pp. 2191 ◽  
Author(s):  
Jun-Young Yoon ◽  
Yun Ho Kim ◽  
Jae-Won Ka ◽  
Sung-Kwon Hong ◽  
Mi Hye Yi ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Solution Processed ◽  
Insulator Surface ◽  
Doped Zno ◽  
Surface Modified

High Performance Amorphous In–Ga–Zn–O Thin-Film Transistors with Low Temperature High-k Solution Processed Hybrid Gate Insulator

2020 ◽  
Vol 9 (2) ◽  
pp. 025002
Author(s):  
Ployrung Kesorn ◽  
Juan Paolo Bermundo ◽  
Toshiaki Nonaka ◽  
Mami N. Fujii ◽  
Yasuaki Ishikawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Insulator ◽  
Solution Processed ◽  
High K

High Performance Aluminum-Doped ZnO Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

2013 ◽  
Vol 11 (8) ◽  
pp. 1509-1512 ◽  
Author(s):  
Dedong Han ◽  
Jian Cai ◽  
Wei Wang ◽  
Liangliang Wang ◽  
Yi Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectrics ◽  
Zno Thin Film ◽  
High K ◽  
Doped Zno

Magnetron-sputtered high performance Y-doped ZnO thin film transistors fabricated at room temperature

2017 ◽  
Vol 71 ◽  
pp. 204-208 ◽  
Author(s):  
Manoj Kumar ◽  
Hakyung Jeong ◽  
Amit Kumar ◽  
Beer Pal Singh ◽  
Dongjin Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Room Temperature ◽  
Zno Thin Film ◽  
Doped Zno

Surface Modification of a Polyimide Gate Insulator with an Yttrium Oxide Interlayer for Aqueous-Solution-Processed ZnO Thin-Film Transistors

Langmuir ◽  
2013 ◽  
Vol 29 (23) ◽  
pp. 7143-7150 ◽  
Author(s):  
Kwang-Suk Jang ◽  
Duyoung Wee ◽  
Yun Ho Kim ◽  
Jinsoo Kim ◽  
Taek Ahn ◽  
...  
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Surface Modification ◽  
Yttrium Oxide ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Solution Processed

Studies on Al-doped ZnO thin-film transistors with Pb(Zr0.3Ti0.7)O3 gate insulator

2011 ◽  
Vol 125 (1) ◽  
pp. 162-167
Author(s):  
Z. H. Chen ◽  
X. B. Liu ◽  
M. C. Chen ◽  
H. H. Yu ◽  
A. Q. Jiang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Doped Zno
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