Fabrication of a graphene nanomesh using a platinum nano-network as a pattern mask

Nanoscale ◽  
2014 ◽  
Vol 6 (12) ◽  
pp. 6482-6486 ◽  
Author(s):  
Insub Jung ◽  
Ho Young Jang ◽  
Junghyuk Moon ◽  
Sungho Park
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High Density ◽  
Pattern Mask ◽  
Graphene Nanomesh ◽  
Effect Transistor ◽  
Hexagonally Ordered

A graphene nanomesh by using a hexagonally ordered Pt nano-network with high-density arrays of periodic nano-holes was synthesized and its field-effect transistor properties are evaluated.

Improved Performance of h-BN Encapsulated Double Gate Graphene Nanomesh Field Effect Transistor for Short Channel Length

2017 ◽  
Vol 17 (01n02) ◽  
pp. 1760016 ◽  
Author(s):  
Durgesh Laxman Tiwari ◽  
K. Sivasankaran
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Contact Region ◽  
Channel Length ◽  
Oxide Material ◽  
Double Gate ◽  
Short Channel ◽  
Graphene Nanomesh ◽  
Effect Transistor ◽  
Improved Performance

This paper presents improved performance of Double Gate Graphene Nanomesh Field Effect Transistor (DG-GNMFET) with h-BN as substrate and gate oxide material. The DC characteristics of 0.95[Formula: see text][Formula: see text]m and 5[Formula: see text]nm channel length devices are studied for SiO2 and h-BN substrate and oxide material. For analyzing the ballistic behavior of electron for 5[Formula: see text]nm channel length, von Neumann boundary condition is considered near source and drain contact region. The simulated results show improved saturation current for h-BN encapsulated structure with two times higher on current value (0.375 for SiO2 and 0.621 for h-BN) as compared to SiO2 encapsulated structure. The obtained result shows h-BN to be a better substrate and oxide material for graphene electronics with improved device characteristics.

Band Engineering of Graphene Nanomesh Field Effect Transistor under Multiscale Simulation Framework

2015 ◽  
Vol 645-646 ◽  
pp. 98-103
Author(s):  
Ya Wei Lv ◽  
Hao Wang ◽  
Sheng Chang ◽  
Zhi Hao Yu ◽  
Jin He ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Multiscale Simulation ◽  
Simulation Framework ◽  
Band Engineering ◽  
Pinning Effect ◽  
Graphene Nanomesh ◽  
Effect Transistor ◽  
Simulation Results ◽  
The Impact

In this paper, we investigate the impact of the size of holes in graphene nanomesh. A multiscale simulation framework is utilized to simulate different structures flexibly. These structures include an intact graphene nanoribbon (GNR), a graphene nanomesh with 4 atoms missing periodic (4-atom holes GNM), and a graphene nanomesh with 6 atoms missing periodic (6-atom holes GNM). Simulation results indicate that a subband appears in the conduction band in 6-atom holes GNM. In addition, interface states which come from the interactions among dangling bonds can significantly reduce the bandgaps of GNMs and induce a pinning effect to their Fermi energies.

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Biosensor Based on Ion-Sensitive Field-Effect Transistor Using Minimum Contact to Float-ing Gate

2019 ◽  
Vol 24 (4) ◽  
pp. 407-414
Author(s):  
Oksana V. Gubanova ◽  
◽  
Evgeniy V. Kuznetsov ◽  
Elena N. Rybachek ◽  
Alexander N. Saurov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
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