Control of active semiconducting layer packing in organic thin film transistors through synthetic tailoring of dielectric materials

RSC Advances ◽  
2014 ◽  
Vol 4 (56) ◽  
pp. 29383-29392 ◽  
Author(s):  
Ranjodh Singh ◽  
Jagan Singh Meena ◽  
Yu-Cheng Chang ◽  
Chung-Shu Wu ◽  
Fu-Hsiang Ko
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Dielectric Materials ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
State Structure ◽  
Cage Structure ◽  
Structure Packing ◽  
New Family ◽  
Layer Packing

The influence of dielectric material's property on the solid state structure packing of active semiconducting layer in OTFTs has been carefully studied by employing a whole new family of dielectric materials based on the rigid, tetrahedral bulky moleculei.e.adamantane, a smallest cage structure of diamond.

Dielectric Materials in Organic Thin Film Transistors

2007 ◽  
Vol 1 (1) ◽  
Author(s):  
A. Awomolo ◽  
L. Jiang ◽  
J. Zhang ◽  
G. Jursich ◽  
C.G. Takoudis
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Dielectric Materials ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Semiconducting Materials ◽  
Plastic Substrates ◽  
Semiconductor Interfaces ◽  
Organic Semiconducting Materials ◽  
And Performance

This work focuses on dielectric materials in organic thin film transistors. Silicon oxides whose surfaces are modified with hexamethyldisilazane (HMDS) and octyltriethoxylSilane (OTS) are investigated. Organic semiconducting materials are used in the transistors made within the scope of this work. Although the devices made using our procedures did not exhibit satisfactory performance, we explored and understood some chemical and engineering aspects of the relevant dielectric/semiconductor interfaces in organic thin film transistors. Understanding these systems would help with improvements of the electrical properties and performance of such systems when plastic substrates are used at the next stage of the project.

Development of High-Performance Organic Thin-Film Transistors for Large-Area Displays

MRS Bulletin ◽  
2006 ◽  
Vol 31 (6) ◽  
pp. 455-459 ◽  
Author(s):  
Sangyun Lee ◽  
Bonwon Koo ◽  
Jae-Geun Park ◽  
Hyunsik Moon ◽  
Jungseok Hahn ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Thin Film Transistors ◽  
High Performance ◽  
Dielectric Materials ◽  
Organic Thin Film Transistors ◽  
Processing Temperature ◽  
Organic Thin Film ◽  
Large Area ◽  
Active Matrix

AbstractOrganic thin-film transistors (OTFTs) are considered indispensable in applications requiring flexibility, large area, low processing temperature, and low cost. Key challenges to be addressed include developing solution-processable gate dielectric materials that form uniform films over large areas and exhibit excellent insulating properties, reducing contact resistance at interfaces between organic semiconductors and electrodes, and optimizing the patterning of organic semiconductors. High-performance pentacene-based OTFTs have been reported with polymeric gate dielectrics and indium tin oxide source/drain electrodes. Using such OTFT backplates, a 15-in. 1024 X 768 pixel full-color active-matrix liquid-crystal display (AMLCD) and a 4.5-in. 192 X64 pixel active-matrix organic light-emitting diode (AMOLED) have been fabricated.

Dielectrics for Organic Transistors with Low Threshold Voltage

2005 ◽  
Vol 871 ◽  
Author(s):  
Jochen Brill ◽  
Silke Goettling ◽  
Eduardo Margallo Balbás
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Thin Film Transistors ◽  
Dielectric Materials ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Organic Transistors ◽  
Organic Thin Film ◽  
High K ◽  
Low Threshold

AbstractOrganic thin film transistors for display applications are investigated. Different dielectric materials – inorganic and organic – have been studied with respect to their electrical performance It was found that anodic oxidation is an excellent process to achieve smooth high-k dielectrics with high breakthrough field strength. With the proposed electrolyte electrical properties were further improved. The alignment of pentacene on different insulators as well as transistors characteristics is presented.

High Performance Organic Thin Film Transistors

2003 ◽  
Vol 771 ◽  
Author(s):  
Tommie W. Kelley ◽  
Dawn V. Muyres ◽  
Paul F. Baude ◽  
Terry P. Smith ◽  
Todd D. Jones
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Integrated Circuit ◽  
Ultrathin Films ◽  
Thin Film Transistors ◽  
High Performance ◽  
Surface Modifications ◽  
Dielectric Materials ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

AbstractWe report here methods of surface modification and device construction which consistently result in lab-scale pentacene-based TFTs with mobilities at or above 5 cm2/Vs. Surface modifications include polymeric ultrathin films presenting a passivated interface on which the semiconductor can grow. High performance TFTs have been fabricated on a variety of dielectric materials, both organic and inorganic, and are currently being implemented in manufacturable constructions. Our surface modifications have also proven useful for substituted pentacene materials and for a variety of other organic semiconductors. In addition, we report an all organic active layer, rf-powered integrated circuit. Further experiments and statistical analyses are underway to explain the elevated mobility in our samples, and efforts have been made to confirm these results through collaboration.

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

A Proposal of High Performance Organic Thin Film Transistors

2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

Photo-Induced Threshold and Onset Voltage Shifts in Organic Thin-Film Transistors

2013 ◽  
Vol E96.C (11) ◽  
pp. 1360-1366 ◽  
Author(s):  
Ichiro FUJIEDA ◽  
Tse Nga NG ◽  
Tomoya HOSHINO ◽  
Tomonori HANASAKI
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Onset Voltage
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