Charge transport behaviors of end-capped narrow band gap polymers in bottom-contact organic field-effect transistors

RSC Advances ◽  
2014 ◽  
Vol 4 (74) ◽  
pp. 39268-39272 ◽  
Author(s):  
Shinae Kim ◽  
Jin Kuen Park ◽  
Yeong Don Park
Keyword(s):  
Charge Transport ◽  
Band Gap ◽  
Conjugated Polymer ◽  
Field Effect ◽  
Narrow Band ◽  
Field Effect Transistors ◽  
Polymer Chains ◽  
Organic Field Effect Transistors ◽  
Charge Trap ◽  
Conjugated Polymer Chains

The ends of conjugated polymer chains were capped with thiophene units to enhance intermolecular packing and decrease device hysteresis by removing charge trap sites.

Balanced Ambipolar Charge Transport in Phenacene/Perylene Heterojunction-Based Organic Field-Effect Transistors

2021 ◽  
Vol 13 (7) ◽  
pp. 8631-8642
Author(s):  
Tomoya Taguchi ◽  
Fabio Chiarella ◽  
Mario Barra ◽  
Federico Chianese ◽  
Yoshihiro Kubozono ◽  
...  
Keyword(s):  
Charge Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

The Maxwell-Wagner model for charge transport in ambipolar organic field-effect transistors: The role of zero-potential position

2012 ◽  
Vol 101 (24) ◽  
pp. 243302 ◽  
Author(s):  
Yasuhiro Mashiko ◽  
Dai Taguchi ◽  
Martin Weis ◽  
Takaaki Manaka ◽  
Mitsumasa Iwamoto
Keyword(s):  
Charge Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Wagner Model ◽  
Zero Potential

scholarly journals Ladder-type bithiophene imide-based organic semiconductors: understanding charge transport mechanisms in organic field effect transistors

2020 ◽  
Vol 8 (44) ◽  
pp. 15759-15770
Author(s):  
Alexandra Harbuzaru ◽  
Iratxe Arrechea-Marcos ◽  
Alberto D. Scaccabarozzi ◽  
Yingfeng Wang ◽  
Xugang Guo ◽  
...  
Keyword(s):  
Charge Transport ◽  
Chain Length ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transport Mechanisms ◽  
Organic Field Effect Transistors

Different charge transport mechanisms at the device interface are found for a series of ladder-type semiconductors with increasing chain length.

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