Giant piezoelectric properties of BZT–0.5BCT thin films induced by nanodomain structure

RSC Advances ◽  
2014 ◽  
Vol 4 (100) ◽  
pp. 56933-56937 ◽  
Author(s):  
W. L. Li ◽  
T. D. Zhang ◽  
Y. F. Hou ◽  
Y. Zhao ◽  
D. Xu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Seed Layer ◽  
Piezoelectric Properties ◽  
Sol Gel ◽  
Si Substrates ◽  
Gel Technique ◽  
Nanodomain Structure

Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3 (BZT–0.5BCT) thin films were prepared from two ceramics targets, Ba(Zr0.2Ti0.8)O3 and (Ba0.7Ca0.3)TiO3, using dual-magnetron sputtering, and a LaNiO3 (LNO) seed layer was introduced between the film and Pt(111)/Ti/SiO2/Si substrates via a sol–gel technique.

Effects of Sputter-Deposited LaNiO3 Electrode on the Deposition and Properties of Ferroelectric Thin Films

1996 ◽  
Vol 433 ◽  
Author(s):  
T. B. Wu ◽  
J. M. Wu ◽  
C. M. Wu ◽  
M. J. Shyu ◽  
M. S. Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Processing Condition ◽  
Fatigue Property ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Sputter Deposited

AbstractHighly (100)-textured thin film of metallic LaNiO3 (LNO) was grown on the Pt/Ti/SiO2/Si substrates by rf magnetron sputtering at ˜300°C, which was used as a bottom electrode to prepare highly (100)-textured ferroelectric films. Examples on the deposition of PbTiO3, (Pbl−xLax)TiO3, Pb(Zr0.53Ti0.47)O3, Pb[(Mg1/3Nb2/3)1−xTix]O3, and (Ba1−xSrx)TiO3 thin films by rf magnetron sputtering or sol-gel method are shown. A reduction of temperature for perovskite phase formation can be achieved, especially for those difficult to crystallize. The surface roughness of the ferroelectric films is also improved as compared to that of films deposited on conventional Pt electrode. Although the electrical properties of the ferroelectric films are affected by the out-diffusion of LNO when a higher temperature was used in the preparation of the films, under an appropriate processing condition, the highly (100)-textured films can have satisfactory electrical characteristics for application. Moreover, the polarization-fatigue property can be also improved by the use of LNO electrode.

An Effective Way to Suppress the Pyrochlore Phase Formation in SBT Thin Films

2003 ◽  
Vol 784 ◽  
Author(s):  
Se-Yeon Jung ◽  
Woo-Chul Kwak ◽  
Seung-Joon Hwang ◽  
Yun-Mo Sung
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Seed Layer ◽  
Sol Gel ◽  
Pyrochlore Phase ◽  
Energy Difference ◽  
Ion Diffusion ◽  
Aurivillius Phase ◽  
Si Substrates ◽  
Coating Methods

ABSTRACTSr0.7Bi2.4Ta2O9 (SBT) thin films were deposited on Pt/Ti/SiO2/Si substrates with and without a seed layer of ∼40 nm thickness using sol-gel and spin coating methods. The influence of seed layer on the phase formation characteristics of SBT thin films was investigated using x-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses. Formation of pyrochlore as well as Aurivillius phase was observed in both the unseeded and seeded SBT films heated at 740°C. However, it was revealed that Aurivillius phase formation was enhanced in seeded SBT thin films and pyrochlore phase formation was highly suppressed. In this study, two possible mechanisms for the suppression of pyrochlore phase formation were proposed from the perspectives of activation energy difference for Aurivillius and pyrochlore phase formation and Bi-ion diffusion to pyrochlore phase.

Suppression of pyrochlore phase formation in Sr0.7Bi2.4Ta2O9 thin films using nanoseed layer

2003 ◽  
Vol 18 (8) ◽  
pp. 1745-1748 ◽  
Author(s):  
Se-Yeon Jung ◽  
Seung-Joon Hwang ◽  
Yun-Mo Sung
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Seed Layer ◽  
Sol Gel ◽  
Pyrochlore Phase ◽  
Energy Difference ◽  
Ion Diffusion ◽  
Aurivillius Phase ◽  
Si Substrates ◽  
Coating Methods

A Sr0.7Bi2.4Ta2O9 (SBT) seed layer approximately 40 nm thick was formed on Pt/Ti/SiO2/Si substrates, and SBT thin films with the same chemical composition were deposited on the substrates with and without seed layer using sol-gel and spin coating methods. The influence of seed layer on the phase formation characteristics of SBT thin films was investigated using x-ray diffraction and scanning electron microscopy analyses. Formation of pyrochlore as well as Aurivillius phase was observed in both the unseeded and seeded SBT films heated at 740 °C. However, it was revealed that Aurivillius phase formation was enhanced in seeded SBT thin films and pyrochlore phase formation was highly suppressed. In this study, two possible mechanisms for the suppression of pyrochlore phase formation were proposed from the perspectives of activation energy difference between Aurivillius and pyrochlore phase formation, and Bi-ion diffusion to pyrochlore phase.

Microstructure Study on Gd-Doped BaTiO3 Sol-Gel Multilayer Thin Films Using AFM for Optoelectronic Applications

2014 ◽  
Vol 911 ◽  
pp. 251-255 ◽  
Author(s):  
Yen Chin Teh ◽  
Ala’eddin A. Saif ◽  
Z.A.Z. Jamal ◽  
Prabakaran Poopalan
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Sol Gel ◽  
Molar Ratio ◽  
Multilayer Thin Films ◽  
Contact Mode ◽  
Si Substrates ◽  
Atomic Force ◽  
Gel Technique ◽  
Doped Barium Titanate

Gadolinium doped barium titanate (Gd-BaTiO3) thin films with the molar ratio of 70:30 have been fabricated on SiO2/Si substrates using sol-gel technique. The effect of number of deposited layers on the grain size and surface morphology has been investigated using an atomic force microscope in contact mode. AFM micro-images show that the films have well distributed grains, dense and crack free surface. In general, the results show that the grain size increases from ~170 nm to ~189 nm as the number of deposited layers increase from one to four layers which attributed to the grain growth mechanism during heating and annealing processes. However, the surface of the films is analysed through amplitude parameters to find out that the films surface is smooth with a predominant for peaks and relatively low number of high peaks and low valleys.

Improvement in Ferroelectric Properties of Sol-Gel Derived SrBi2Ta2O9 thin films with seeding layers

2002 ◽  
Vol 718 ◽  
Author(s):  
Ching-Chich Leu ◽  
Chao-Hsin Chien ◽  
Ming-Jui Yang ◽  
Ming-Che Yang ◽  
Tiao-Yuan Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Strontium Bismuth Tantalate ◽  
Seeding Layer ◽  
Si Substrates ◽  
Nucleation Sites

AbstractThe effects of a seeding layer, which was deposited on Pt/TiO2/SiO2/Si substrates using magnetron sputtering, on the characteristics of sol-gel-deposited strontium-bismuth-tantalate (SBT) thin films are investigated. The seeding layer serves as nucleation sites so homogeneous crystalline SBT films of bismuth-layered structure (BLS) with fine grains are successfully obtained by 750°C rapid thermal annealing in O2 ambient. The remanent polarization (2Pr) improves from 12.1 to 18.8 μC/cm2 with the addition of the seeding layer. In addition, the seeding layer also results in a lower nucleation temperature, allowing the use of 700°C annealing for 10 min to grow SBT films that are fully crystallized with BLS phase and shows good ferroelectric properties. Finally, crystallinity and microstructures of SBT films are found to be strongly dependent on the thickness of the seeding layer. Optimum Ta-seeded SBT thin film crystallized at 700°C for 10min depicts a higher 2Pr value (12.9 μC/cm2 (@5V) than that of the un-seeded films crystallized at 750°C for 1min.

Microstructures Study on Cuprous Oxide Thin Films Deposited on Different Substrates by Using Sol-Gel Technique

2012 ◽  
Vol 626 ◽  
pp. 849-852
Author(s):  
Dewi Suriyani Che Halin ◽  
Haroon Haiza ◽  
Ibrahim Abu Talib ◽  
Abdul Razak Daud ◽  
Muhammad Azmi Abd Hamid
Keyword(s):  
Thin Films ◽  
Indium Tin Oxide ◽  
Cuprous Oxide ◽  
Grain Shape ◽  
Sol Gel ◽  
Si Substrate ◽  
Structural And Optical Properties ◽  
Si Substrates ◽  
Gel Technique ◽  
Fesem Micrographs

Cuprous oxide (Cu2O) thin films were formed onto three different substrates such as indium tin oxide (ITO) coated glass, titanium oxide (TiO2) and n-Si substrates by sol-gel spin coating technique. It was found that the formation mechanism of Cu2O films onto different substrates lead to different microstructures. The films were characterized by field-emission scanning electron microscopy (FESEM). Based on the FESEM micrographs the grain shape of film prepared were different on ITO, TiO2 and n-Si substrate with 114 nm, 154 nm and 84 nm respectively. The results indicate that the choice of substrate strongly affect the film morphology, structural and optical properties. Keywords: Cu2O, thin films, ITO, sol-gel, microstructures

SYNTHESIS AND CHARACTERIZATION OF La-DOPED ZnO (La:ZnO) FILMS FOR PHOTODETECTORS

2019 ◽  
Vol 27 (07) ◽  
pp. 1950173 ◽  
Author(s):  
BESTOON ANWER GOZEH ◽  
ABDULKERIM KARABULUT ◽  
MUDHAFFER M AMEEN ◽  
ABDULKADIR YILDIZ ◽  
FAHRETTIN YAKUPHANOĞLU
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Electrical Characterization ◽  
Zno Thin Films ◽  
Si Substrates ◽  
Electronic Parameters ◽  
Gel Technique ◽  
Doped Zno ◽  
La Doped

In this work, the La-doped ZnO thin films were fabricated with different La concentrations by the use of sol–gel technique to synthesize the photodevice. The transparent metal oxide La-doped ZnO thin films were grown on glass and [Formula: see text]-Si substrates using spin coating technique. Optical, surface morphology and electrical characterization of the fabricated Al/[Formula: see text]-Si/La:ZnO/Al devices have been performed using [Formula: see text]–[Formula: see text] and [Formula: see text]/[Formula: see text]–[Formula: see text] characteristics under dark and different illumination conditions. Herein, from [Formula: see text]–[Formula: see text] characteristics, the crucial electronic parameters such as barrier height, ideality factor and series resistance were investigated. The photodevice transient photocurrent increases with the increase of illumination intensity. The current ratios of [Formula: see text]/[Formula: see text] were calculated for the fabricated devices. Among the devices, the highest photoresponse was found to be about 2186 for the Al/[Formula: see text]-Si/La(0.5 wt.%):ZnO/Al structure. The [Formula: see text]–[Formula: see text] behavior of fabricated device confirms the presence of interface states. The obtained results and photoresponse behaviors suggested that Al/[Formula: see text]-Si/La:ZnO/Al devices can enhance the applications in optoelectronic devices such as photodetectors.

ENHANCED STRUCTURAL AND ELECTRICAL PROPERTIES OF LEAD-FREE Y-DOPED (K, Na) NbO3 THIN FILMS

2015 ◽  
Vol 77 (21) ◽  
Author(s):  
Maziati Akmal ◽  
Umar Al-Amani ◽  
Mohd Warikh ◽  
Nurul Azuwa
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Lattice Structure ◽  
Sol Gel ◽  
Small Shift ◽  
Si Substrates ◽  
Structural And Electrical Properties ◽  
Gel Technique ◽  
A Site ◽  
Different Content

Yttrium- doped KNN thin films were grown on Si substrates using the sol-gel technique. The profound effects of Yttrium with different content element (mol % = 0, 0.1, 0.3, 0.5, 0.7 and 0.9) on the structural and electrical properties of KNN films were analyzed. The doped samples demonstrated a mainly uniform and homogenous microstructure with grain size less than 100 nm. The existence of Y Kα line shown in EDX spectrum confirmed the presence of Y-dopant in KNN based-compound. Small shift position of the Raman peaks indicated that Y incorporated on the interstitial A-site while broaden FWHM ascribed that Y preferably enters B-site lattice at high dopant concentration. The enhanced electrical resistivity at 0.5 mol % Y suggested that more conduction electrons were formed in KNN lattice structure.

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