A solution based route to GaAs thin films from As(NMe2)3 and GaMe3 for solar cells

The novel deposition of GaAs thin films on glass substrates from a solution based route involving the aerosol assisted chemical vapour deposition (AACVD) of As(NMe2)3 and GaMe3 dissolved in toluene is reported.

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Chemical vapour deposition (CVD) of nickel oxide using the novel nickel dialkylaminoalkoxide precursor [Ni(dmamp′)2] (dmamp′ = 2-dimethylamino-2-methyl-1-propanolate)

RSC Advances ◽

10.1039/d1ra03263a ◽

2021 ◽

Vol 11 (36) ◽

pp. 22199-22205

Author(s):

Rachel L. Wilson ◽

Thomas J. Macdonald ◽

Chieh-Ting Lin ◽

Shengda Xu ◽

Alaric Taylor ◽

...

Keyword(s):

Thin Films ◽

Nickel Oxide ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Hole Transport ◽

Blocking Layer ◽

The Novel ◽

Electron Blocking Layer

We describe CVD of nickel oxide (NiO) thin films using a new precursor [Ni(dmamp′)2], synthesised using a readily commercially available dialkylaminoalkoxide ligand (dmamp′), which is applied to synthesis of a hole transport-electron blocking layer.

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Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited via aerosol assisted CVD

Journal of Materials Chemistry C ◽

10.1039/c7tc04003b ◽

2018 ◽

Vol 6 (3) ◽

pp. 588-597 ◽

Cited By ~ 38

Author(s):

Dominic B. Potter ◽

Michael J. Powell ◽

Ivan P. Parkin ◽

Claire J. Carmalt

Keyword(s):

Thin Films ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Zno Thin Films ◽

Glass Substrates ◽

Doped Zno ◽

Indium Gallium ◽

Co Doped

Aluminium/gallium co-doped ZnO (AGZO), indium/gallium co-doped ZnO (IGZO), and aluminium/indium co-doped ZnO (AIZO) thin films were synthesised on glass substrates via aerosol assisted chemical vapour deposition (AACVD).

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Aerosol assisted chemical vapour deposition of transparent conductive ZnO thin films with hexagonal microplate surfaces and ultrahigh haze values

Journal of Materials Chemistry A ◽

10.1039/c5ta06029j ◽

2015 ◽

Vol 3 (44) ◽

pp. 22311-22315 ◽

Cited By ~ 8

Author(s):

Shuqun Chen ◽

Martyn McLachlan ◽

Andrei Sapelkin ◽

Russell Binions

Keyword(s):

Thin Films ◽

Chemical Vapour Deposition ◽

Silica Glass ◽

Vapour Deposition ◽

Chemical Vapour ◽

Zno Thin Films ◽

Textured Surfaces ◽

Glass Substrates

Aerosol assisted chemical vapour deposition has been used to fabricate transparent conductive ZnO thin films with highly hexagonal, textured surfaces and ultra high haze on silica glass substrates.

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Effects of annealing temperature on crystallisation kinetics and properties of polycrystalline Si thin films and solar cells on glass fabricated by plasma enhanced chemical vapour deposition

Thin Solid Films ◽

10.1016/j.tsf.2011.06.089 ◽

2011 ◽

Vol 520 (1) ◽

pp. 543-549 ◽

Cited By ~ 7

Author(s):

Yuguo Tao ◽

Sergey Varlamov ◽

Guangyao Jin ◽

Michael Wolf ◽

Renate Egan

Keyword(s):

Thin Films ◽

Solar Cells ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Annealing Temperature ◽

Chemical Vapour ◽

Crystallisation Kinetics

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New Approach Towards The Deposition of I-III-VI Thin Films

MRS Proceedings ◽

10.1557/proc-692-h6.8.1 ◽

2001 ◽

Vol 692 ◽

Cited By ~ 2

Author(s):

Mohammad Afzaal ◽

David Crouch ◽

Paul O'Brien ◽

Jin-Ho Park

Keyword(s):

Thin Films ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

High Efficiency ◽

Chemical Vapour ◽

One Pot ◽

Optimum Growth Temperature ◽

Glass Substrates ◽

Show Evidence ◽

Organometallic Precursors

AbstractThe ternary chalcopyrite semiconductor Cu(In/Ga)(Se/S)2 is currently used as an absorber layer in high efficiency thin film solar cells. In this study, various types of I-III-VI (I = Cu, III = Ga or In, VI = S or Se) thin films (CuGaS2, CuInS2 and CuInSe2) were prepared from a series of organometallic precursors, M[(S/Se)2CNMeR]n (M = Cu, In, Ga; R = alkyl) by aerosol-assisted chemical vapour deposition (AACVD). In contrast to the metal alkyl compounds, MR3 (M = In and Ga; R = alkyl), which are pyrophoric, the precursors are easy to synthesize by one-pot reactions and are air stable. The optimum growth temperature for the preparation of these films on glass substrates using aerosol-assisted chemical vapour deposition (AACVD) was found to be above 400 °C in terms of crystallinity, although deposition does occur at lower temperatures. The films have been characterised using XRPD, SEM and EDS. SEM analyses show all films are microcrystalline. XRPD results show evidence of the crystalline nature of theses films. The results of this comprehensive study are presented and discussed.

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The deposition of cadmium selenide and cadmium phosphide thin films from cadmium thioselenoimidodiphosphinate by AACVD and the formation of an aromatic species

Dalton Transactions ◽

10.1039/c8dt04357d ◽

2019 ◽

Vol 48 (4) ◽

pp. 1436-1442 ◽

Cited By ~ 4

Author(s):

Temidayo Oyetunde ◽

Mohammad Afzaal ◽

Mark A. Vincent ◽

Paul O'Brien

Keyword(s):

Thin Films ◽

Cadmium Selenide ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Flow Rates ◽

Glass Substrates ◽

Argon Flow ◽

Aromatic Species

Aerosol-assisted chemical vapour deposition (AACVD) of Cd[(SPiPr2)(SePiPr2)N]2 yields hexagonal cadmium selenide and monoclinic cadmium phosphide films on glass substrates between 475 and 525 °C at different argon flow rates.

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Transparent conductive aluminium and fluorine co-doped zinc oxide films via aerosol assisted chemical vapour deposition

RSC Advances ◽

10.1039/c4ra09997d ◽

2014 ◽

Vol 4 (91) ◽

pp. 49723-49728 ◽

Cited By ~ 31

Author(s):

Sapna D. Ponja ◽

Sanjayan Sathasivam ◽

Ivan P. Parkin ◽

Claire J. Carmalt

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Zno Thin Films ◽

Glass Substrates ◽

Zinc Oxide Films ◽

Doped Zno ◽

Co Doped

Aerosol assisted chemical vapour deposition (AACVD) was employed to synthesise highly transparent and conductive ZnO, fluorine or aluminium doped and aluminium–fluorine co-doped ZnO thin films on glass substrates at 450 °C.

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