Flash grafting of functional random copolymers for surface neutralization

Rapid Thermal Processing (RTP) technology was employed to perform flash grafting reactions of a hydroxyl terminated poly(styrene-r-methylmethacrylate) random copolymer to a silicon surface.

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On the Contacts Formed in Ni-Al-Si System Due to Localized Melting by Means of Rapid Thermal Processing

MRS Proceedings ◽

10.1557/proc-100-719 ◽

1988 ◽

Vol 100 ◽

Cited By ~ 1

Author(s):

A. Katz ◽

Y. Komem

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Thermal Processing ◽

Silicon Surface ◽

Schottky Barrier Height ◽

Rapid Thermal Processing ◽

Solidification Process ◽

Eutectic Liquid ◽

Eutectic Melting ◽

Rapid Melting

ABSTRACTLocalized rapid melting of an intermediate Al film in the Ni(30nm)/Al(10nm)/<100>n-Si system was successfully carried out by means of rapid thermal processing at temperatures higher than 580°C. This rapid melting resulted in the formation of a unique metal-silicon contact composed of three separated layers and has the following structure: Ni(Al0.5,Si0.5)/Al3 Ni/NiSi / <100>n-Si. It was found on the basis of quenching treatments after subsequent rapid thermal processings that an eutectic melting initiated at the Al-Si interface at 580°C, propagated towards the Ni layer and then formed a localized melt zone confined mainly to the region of the intermediate Al layer. The formation of the nickel silicides took place at the silicon surface after Ni diffusion through the melt zone, while the Al compounds were formed during a solidification process of the eutectic liquid. The eutectic melting at 580°C led to the decrease of the sheet resistance of the formed films from 3.2 to 2.6 / and to the increase of the Schottky barrier height of the contact from 0.6 to 0.76 eV.

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In-Situ Processing of Silicon Dielectrics by Rapid Thermal Processing: Cleaning, Growth, and Annealing

MRS Proceedings ◽

10.1557/proc-92-141 ◽

1987 ◽

Vol 92 ◽

Cited By ~ 13

Author(s):

J. Nulman

Keyword(s):

Thermal Processing ◽

Silicon Surface ◽

Rapid Thermal Processing ◽

Oxide Growth ◽

Surface Chemical ◽

Native Oxides ◽

Wafer Cleaning ◽

In Situ Processing ◽

Kinetics Of

ABSTRACTThe in-situ processing of silicon dielectrics by rapid thermal processing (RTP) is described. RTP includes here three basic sequentially performed processes: wafer cleaning, oxidation and annealing. The insitu cleaning allows for reduction of chemical and native oxides and silicon surface chemical polish, resulting in interface density of states as low as 5×l09 cm-2eV-1. Kinetics of oxide growth indicates an activation energy of 1.4 eV for the initial linear oxidation rate.

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Selective Oxidation Using Ultrathin Nitrogen‐Rich Silicon Surface Layers Grown by Rapid Thermal Processing

Journal of The Electrochemical Society ◽

10.1149/1.2097151 ◽

1989 ◽

Vol 136 (7) ◽

pp. 2035-2038 ◽

Cited By ~ 5

Author(s):

C. A. Paz de Araujo ◽

Y. P. Huang ◽

R. Gallegos

Keyword(s):

Selective Oxidation ◽

Thermal Processing ◽

Silicon Surface ◽

Rapid Thermal Processing ◽

Surface Layers

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Gas Flow Engineering in Rapid Thermal Processing

MRS Proceedings ◽

10.1557/proc-342-401 ◽

1994 ◽

Vol 342 ◽

Cited By ~ 13

Author(s):

Z. Nényei ◽

H. Sommer ◽

J. Gelpey ◽

A. Bauer

Keyword(s):

Low Temperature ◽

Thermal Processing ◽

Gas Dynamics ◽

Silicon Surface ◽

Gas Flow ◽

Rapid Thermal Processing ◽

Inert Gas ◽

Guard Ring ◽

Interface Damage ◽

Bottom Heater

ABSTRACTGas flow engineering involves gas dynamics optimization for effective ambient change before heating and for homogeneous convective cooling of the wafers during the heating steps. Multiple gas buffle system, dynamical gas handling, low pressure operation, low temperature edge guard ring and independent top and bottom heater bank control are the proper tools for this optimization. Silicon surface or interface damage during inert gas anneal can be avoided by addition of a small amount of oxygen.

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