The role of solution-processed high-κ gate dielectrics in electrical performance of oxide thin-film transistors

2014 ◽  
Vol 2 (27) ◽  
pp. 5389 ◽  
Author(s):  
Wangying Xu ◽  
Han Wang ◽  
Lei Ye ◽  
Jianbin Xu
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Solution Processed

Role of Rare Earth Ions in Anodic Gate Dielectrics for Indium-Zinc-Oxide Thin-Film Transistors

2012 ◽  
Vol 159 (5) ◽  
pp. H502-H506 ◽  
Author(s):  
Dongxiang Luo ◽  
Linfeng Lan ◽  
Miao Xu ◽  
Hua Xu ◽  
Min Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Rare Earth ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Rare Earth Ions ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide

scholarly journals Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors

Materials ◽  
2017 ◽  
Vol 10 (6) ◽  
pp. 612 ◽  
Author(s):  
Jae Heo ◽  
Seungbeom Choi ◽  
Jeong-Wan Jo ◽  
Jingu Kang ◽  
Ho-Hyun Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film ◽  
Mobility Solution

Role of gallium and yttrium dopants on the stability and performance of solution processed indium oxide thin-film transistors

2019 ◽  
Vol 7 (25) ◽  
pp. 7627-7635 ◽  
Author(s):  
Felix Jaehnike ◽  
Duy Vu Pham ◽  
Claudia Bock ◽  
Ulrich Kunze
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Metal Oxide Thin Film ◽  
And Performance ◽  
The Stability ◽  
Yttrium Doping ◽  
Indium Oxide Thin Film

We study the effect of gallium and yttrium doping on both the electrical performance and the stability of indium based metal-oxide thin-film transistors (MOTFTs) at varied concentrations.

Solution-processed lanthanum-doped Al2O3 gate dielectrics for high-mobility metal-oxide thin-film transistors

2018 ◽  
Vol 660 ◽  
pp. 814-818 ◽  
Author(s):  
Jaeyoung Kim ◽  
Seungbeom Choi ◽  
Jeong-Wan Jo ◽  
Sung Kyu Park ◽  
Yong-Hoon Kim
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film

Impact of the Cation Composition on the Electrical Performance of Solution-Processed Zinc Tin Oxide Thin-Film Transistors

2014 ◽  
Vol 6 (16) ◽  
pp. 14026-14036 ◽  
Author(s):  
Yoon Jang Kim ◽  
Seungha Oh ◽  
Bong Seob Yang ◽  
Sang Jin Han ◽  
Hong Woo Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Cation Composition ◽  
Solution Processed ◽  
Zinc Tin Oxide

Role of Adsorbed H$_{2}$O on Transfer Characteristics of Solution-Processed Zinc Tin Oxide Thin-Film Transistors

2012 ◽  
Vol 5 (2) ◽  
pp. 021101 ◽  
Author(s):  
DooHyun Kim ◽  
SooBok Yoon ◽  
YeonTaek Jeong ◽  
YoungMin Kim ◽  
BoSung Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Transfer Characteristics ◽  
Zinc Tin Oxide

scholarly journals Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 965
Author(s):  
Yanwei Li ◽  
Chun Zhao ◽  
Deliang Zhu ◽  
Peijiang Cao ◽  
Shun Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Large Scale ◽  
Low Cost ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Solution Processed ◽  
Recent Advances ◽  
Oxide Tfts

Thin-film transistors (TFTs) made of metal oxide semiconductors are now increasingly used in flat-panel displays. Metal oxides are mainly fabricated via vacuum-based technologies, but solution approaches are of great interest due to the advantages of low-cost and high-throughput manufacturing. Unfortunately, solution-processed oxide TFTs suffer from relatively poor electrical performance, hindering further development. Recent studies suggest that this issue could be solved by introducing a novel heterojunction strategy. This article reviews the recent advances in solution-processed heterojunction oxide TFTs, with a specific focus on the latest developments over the past five years. Two of the most prominent advantages of heterostructure oxide TFTs are discussed, namely electrical-property modulation and mobility enhancement by forming 2D electron gas. It is expected that this review will manifest the strong potential of solution-based heterojunction oxide TFTs towards high performance and large-scale electronics.

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