Role of gallium and yttrium dopants on the stability and performance of solution processed indium oxide thin-film transistors

2019 ◽  
Vol 7 (25) ◽  
pp. 7627-7635 ◽  
Author(s):  
Felix Jaehnike ◽  
Duy Vu Pham ◽  
Claudia Bock ◽  
Ulrich Kunze
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Metal Oxide Thin Film ◽  
And Performance ◽  
The Stability ◽  
Yttrium Doping ◽  
Indium Oxide Thin Film

We study the effect of gallium and yttrium doping on both the electrical performance and the stability of indium based metal-oxide thin-film transistors (MOTFTs) at varied concentrations.

Improved Morphology and Performance of Solution-Processed Metal-Oxide Thin-Film Transistors Due to a Polymer Based Interface Modifier

2014 ◽  
Vol 1 (7) ◽  
pp. 1400137 ◽  
Author(s):  
Corinna Weber ◽  
Moritz Oberberg ◽  
Dennis Weber ◽  
Claudia Bock ◽  
Duy Vu Pham ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film ◽  
And Performance

Tuning the electrical performance of metal oxide thin-film transistors via dielectric interface trap passivation and graded channel modulation doping

2017 ◽  
Vol 5 (5) ◽  
pp. 1206-1215 ◽  
Author(s):  
Zhiheng Wu ◽  
Zhiqiang Yao ◽  
Suilin Liu ◽  
Bin Yuan ◽  
Yake Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Interface Trap ◽  
Modulation Doping ◽  
Channel Modulation ◽  
Metal Oxide Thin Film ◽  
Novel Strategy

A novel strategy to achieve high performance thin-film transistors based on carrier concentration-graded InGaZnO channels using Al2O3-passivated HfO2 as a dielectric layer was established.

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