Soluble oxide gate dielectrics prepared using the self-combustion reaction for high-performance thin-film transistors

2014 ◽  
Vol 2 (28) ◽  
pp. 5695-5703 ◽  
Author(s):  
Eun Jin Bae ◽  
Young Hun Kang ◽  
Mijeong Han ◽  
Changjin Lee ◽  
Song Yun Cho
Keyword(s):  
Thin Film ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectrics ◽  
Solution Process ◽  
The Self ◽  
Oxide Thin Film ◽  
Combustion Chemistry ◽  
Metal Oxide Thin Film

We report the fabrication of high-performance metal oxide thin-film transistors (TFTs) with AlOx gate dielectrics using combustion chemistry in a solution process to provide energy to convert oxide precursors into oxides at low temperatures.

Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

2010 ◽  
Vol 10 (1) ◽  
pp. 45-50 ◽  
Author(s):  
K. K. Banger ◽  
Y. Yamashita ◽  
K. Mori ◽  
R. L. Peterson ◽  
T. Leedham ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film ◽  
On Chip

Solution-processed indium-free ZnO/SnO2 bilayer heterostructures as a low-temperature route to high-performance metal oxide thin-film transistors with excellent stabilities

2016 ◽  
Vol 4 (47) ◽  
pp. 11298-11304 ◽  
Author(s):  
Sooji Nam ◽  
Jong-Heon Yang ◽  
Sung Haeng Cho ◽  
Ji Hun Choi ◽  
Oh-Sang Kwon ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film

The ZnO/SnO2 bilayer TFTs exhibited outstanding electron mobilities and excellent electrical stabilities against a variety of bias stresses.

scholarly journals Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors

Materials ◽  
2017 ◽  
Vol 10 (6) ◽  
pp. 612 ◽  
Author(s):  
Jae Heo ◽  
Seungbeom Choi ◽  
Jeong-Wan Jo ◽  
Jingu Kang ◽  
Ho-Hyun Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film ◽  
Mobility Solution

Modulation of aqueous precursor solution temperature for the fabrication of high-performance metal oxide thin-film transistors

2015 ◽  
Vol 8 (8) ◽  
pp. 081101 ◽  
Author(s):  
Keun Ho Lee ◽  
Jee Ho Park ◽  
Young Bum Yoo ◽  
Sun Woong Han ◽  
Se Jong Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Precursor Solution ◽  
Oxide Thin Film ◽  
Solution Temperature ◽  
Metal Oxide Thin Film

Lithium ion assisted hydration of metal ions in non-aqueous sol–gel inks for high performance metal oxide thin-film transistors

2015 ◽  
Vol 3 (24) ◽  
pp. 6276-6283 ◽  
Author(s):  
Jee Ho Park ◽  
Jin Young Oh ◽  
Hong Koo Baik ◽  
Tae Il Lee
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Metal Ions ◽  
Thin Film Transistors ◽  
High Performance ◽  
Sol Gel ◽  
Lithium Ion ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film

Enhanced hydration lowers the dehydroxylation temperature of the sol–gel inks, resulting in high-performance metal oxide thin film transistors.

Solution-processed lanthanum-doped Al2O3 gate dielectrics for high-mobility metal-oxide thin-film transistors

2018 ◽  
Vol 660 ◽  
pp. 814-818 ◽  
Author(s):  
Jaeyoung Kim ◽  
Seungbeom Choi ◽  
Jeong-Wan Jo ◽  
Sung Kyu Park ◽  
Yong-Hoon Kim
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film
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