Aqueous-based synthesis of gallium tungsten oxide thin film dielectrics

Gallium tungsten oxide thin films formed from a single aqueous precursor. The highly controllable metal content allowed for fine-tuning of film dielectric and optical properties.

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Structural and tribological properties of tungsten oxide thin film on a silicon substrate

Journal of Chemical Research ◽

10.1177/1747519820923100 ◽

2020 ◽

Vol 44 (11-12) ◽

pp. 744-749

Author(s):

Siamak Ziakhodadadian ◽

Tianhui Ren

Keyword(s):

Thin Film ◽

Thin Films ◽

Substrate Temperature ◽

Tungsten Oxide ◽

Oxide Thin Film ◽

X Ray Diffraction ◽

Oxide Thin Films ◽

X Ray ◽

Tungsten Oxide Thin Films ◽

Scanning Electron

In this work, tungsten oxide thin films are deposited on silicon substrates using the hot filament chemical vapor deposition system. The influence of substrate temperature on the structural, morphological, and elemental composition of the tungsten oxide thin films is investigated using X-ray diffraction, field-emission scanning electron microscopy, and X-ray photoelectron spectroscopy techniques. Also, the mechanical and tribological properties of these thin films are considered using nanoindentation and scratch tests. Based on X-ray diffraction results, it can be concluded that tungsten oxide thin films are synthesized with a cubic WO3 structure. From field-emission scanning electron microscopy images, it can be seen that tungsten oxide thin films are made of crystal clusters which have grown vertically on the substrate surface. In addition, the results exhibit two asymmetric W4d5/2 and W4d7/2 peaks which can be assigned to W5+ and W4+ species, respectively. The mechanical results show that the hardness and the elastic modulus increase on raising the substrate temperature up to 600 °C. From the tribological performances, the friction coefficient of the tungsten oxide thin film decreases on increasing the substrate temperature.

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Tunable high-κ ZrxAl1−xOy thin film dielectrics from all-inorganic aqueous precursor solutions

RSC Advances ◽

10.1039/c7ra08362a ◽

2017 ◽

Vol 7 (62) ◽

pp. 39147-39152 ◽

Cited By ~ 5

Author(s):

K. N. Woods ◽

E. C. Waddington ◽

C. A. Crump ◽

E. A. Bryan ◽

T. S. Gleckler ◽

...

Keyword(s):

Thin Film ◽

Aqueous Solution ◽

Dielectric Properties ◽

Aluminum Oxide ◽

Oxide Thin Film ◽

Solution Route ◽

Thin Film Dielectrics ◽

Film Dielectric ◽

Inorganic Aqueous Solution

An all-inorganic, aqueous solution route enables facile control of composition and optimization of zirconium aluminum oxide thin film dielectric properties.

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Physical Structure and the Electrochromic effect in Tungsten Oxide Films

MRS Proceedings ◽

10.1557/proc-24-221 ◽

1983 ◽

Vol 24 ◽

Cited By ~ 24

Author(s):

A. P. Giri ◽

R. Messier

Keyword(s):

Thin Film ◽

Electron Microscopy ◽

Thin Films ◽

Tungsten Oxide ◽

Physical Structure ◽

Structure Property ◽

Electrochromic Devices ◽

Tungsten Oxide Thin Films ◽

Electrochromic Effect ◽

Evolutionary Growth

ABSTRACTIn all previous studies of tungsten oxide films it has been implicitly assumed that the film is uniform except for grain boundaries in polycrystalline films. In this study we show that amorphous tungsten oxide thin films contain highly anisotropic void networks which not only dominate their physical structure but also control their electrochromic behaviour. The void network structure is controlled primarily through ion bombardment of the growing film during deposition while the film stoichiometry HyWO3−x is controlled by the reactive sputtering processes of tungsten in Ar/O2/H2 atmospheres. The evolutionary growth model of physical structure was studied in detail by both transmission and scanning electron microscopy. On the basis of physical structure-property correlations we are able to consistently explain the basic electrochromic characteristics and chemical stability of the films. Such information leads to better understanding of the problems and limitations inherent in thin film electrochromic devices.

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Optoelectronic properties of highly porous silver oxide thin film

SN Applied Sciences ◽

10.1007/s42452-020-04091-1 ◽

2021 ◽

Vol 3 (1) ◽

Author(s):

Ahmad Al-Sarraj ◽

Khaled M. Saoud ◽

Abdelaziz Elmel ◽

Said Mansour ◽

Yousef Haik

Keyword(s):

Thin Film ◽

Thin Films ◽

Electron Microscope ◽

Plasma Etching ◽

Silver Oxide ◽

Oxidation Time ◽

Oxide Thin Film ◽

X Ray ◽

Porous Silver ◽

Highly Porous

Abstract In this paper, we report oxidation time effect on highly porous silver oxide nanowires thin films fabricated using ultrasonic spray pyrolysis and oxygen plasma etching method. The NW’s morphological, electrical, and optical properties were investigated under different plasma etching periods and the number of deposition cycles. The increase of plasma etching and oxidation time increases the surface roughness of the Ag NWs until it fused to form a porous thin film of silver oxide. AgNWs based thin films were characterized using X-ray diffraction, scanning electron microscope, transmission electron microscope, X-ray photoemission spectroscopy, and UV–Vis spectroscopy techniques. The obtained results indicate the formation of mixed mesoporous Ag2O and AgO NW thin films. The Ag2O phase of silver oxide appears after 300 s of oxidation under the same conditions, while the optical transparency of the thin film decreases as plasma etching time increases. The sheet resistance of the final film is influenced by the oxidation time and the plasma application periodicity. Graphic abstract

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