scholarly journals Structural and tribological properties of tungsten oxide thin film on a silicon substrate

2020 ◽  
Vol 44 (11-12) ◽  
pp. 744-749
Author(s):  
Siamak Ziakhodadadian ◽  
Tianhui Ren
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Tungsten Oxide ◽  
Oxide Thin Film ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
X Ray ◽  
Tungsten Oxide Thin Films ◽  
Scanning Electron

In this work, tungsten oxide thin films are deposited on silicon substrates using the hot filament chemical vapor deposition system. The influence of substrate temperature on the structural, morphological, and elemental composition of the tungsten oxide thin films is investigated using X-ray diffraction, field-emission scanning electron microscopy, and X-ray photoelectron spectroscopy techniques. Also, the mechanical and tribological properties of these thin films are considered using nanoindentation and scratch tests. Based on X-ray diffraction results, it can be concluded that tungsten oxide thin films are synthesized with a cubic WO3 structure. From field-emission scanning electron microscopy images, it can be seen that tungsten oxide thin films are made of crystal clusters which have grown vertically on the substrate surface. In addition, the results exhibit two asymmetric W4d5/2 and W4d7/2 peaks which can be assigned to W5+ and W4+ species, respectively. The mechanical results show that the hardness and the elastic modulus increase on raising the substrate temperature up to 600 °C. From the tribological performances, the friction coefficient of the tungsten oxide thin film decreases on increasing the substrate temperature.

The Use of BaF2 Buffer Layers for the Sputter-Deposition of Ticabacuo Thin-Film Superconductors

1989 ◽  
Vol 169 ◽  
Author(s):  
K.M. Hubbard ◽  
P.N. Arendt ◽  
D.R. Brown ◽  
D.W. Cooke ◽  
N.E. Elliott ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sputter Deposition ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Film Substrate ◽  
Ion Backscattering ◽  
Scanning Electron

AbstractThin films of the Tl‐based superconductors often have relatively poor properties because of film/substrate interdiffusion which occurs during the anneal. We have therefore investigated the use of BaF2 as a diffusion barrier. TICaBaCuO thin films were deposited by dc magnetron sputtering onto MgO <100> substrates, both with and without an evaporation‐deposited BaF2 buffer layer, and post‐annealed in a Tl over‐pressure. Electrical properties of the films were determined by four‐point probe analysis, and compositions were measured by ion‐backscattering spectroscopy. Structural analysis was performed by X‐ray diffraction and scanning electron microscopy. The BaF2 buffer layers were found to significantly improve the properties of the TICaBaCuO thin films.

scholarly journals Superconducting YBaCuO thin Films by Cu-Ion Implantation

1990 ◽  
Vol 201 ◽  
Author(s):  
Kevin M. Hubbard ◽  
Nicole Bordes ◽  
Michael Nastasi ◽  
Joseph R. Tesmer
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Ion Implantation ◽  
Normal State ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

AbstractWe have investigated the fabrication of thin-film superconductors by Cu-ion implantation into initially Cu-deficient Y(BaF2)Cu thin films. The precursor films were co-evaporated on SrTiO3 substrates, and subsequently implanted to various doses with 400 keV 63Cu2+. Implantations were preformed at both LN2 temperature and at 380°C. The films were post-annealed in oxygen, and characterized as a function of dose by four-point probe analysis, X-ray diffraction, ion-beam backscattering and channeling, and scanning electron microscopy. It was found that a significant improvement in film quality could be achieved by heating the films to 380°C during the implantation. The best films became fully superconducting at 60–70 K, and exhibited good metallic R vs. T. behavior in the normal state.

Ferroelectric properties in all solution prepared Bi6Fe2Ti3O18/Ba0.92La0.08SnO3 thin films

2016 ◽  
Vol 30 (35) ◽  
pp. 1650394
Author(s):  
Li Zhang ◽  
Yibao Li ◽  
Zhen Tang ◽  
Yan Deng ◽  
Hui Yuan ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Coercive Field ◽  
Ferroelectric Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transparent Conducting ◽  
Scanning Electron

In this paper, all solution processing is used to prepare both the transparent conducting Ba[Formula: see text]La[Formula: see text]SnO3 (BLSO) thin films as bottom electrodes and ferroelectric Bi6Fe2Ti3O[Formula: see text] (BFTO) thin films. The derived BFTO thin films are characterized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM). The derived thin film is polycrystalline with dense microstructures. The remnant polarization [Formula: see text] at the measurement frequency of 2 kHz can reach [Formula: see text] under the 500 kV/cm electric field and the coercive field [Formula: see text] is 410 kV/cm. The results will provide a feasible route to prepare BFTO thin films on transparent conducting bottom electrodes to realize multifunctionality.

Investigation on AZO Films Deposited by Radio-Frequency Reactive Magnetron Sputtering

2013 ◽  
Vol 320 ◽  
pp. 35-39
Author(s):  
Cheng Long Kang ◽  
Jin Xiang Deng ◽  
Min Cui ◽  
Chao Man ◽  
Le Kong ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Doped Zno ◽  
Scanning Electron

The Al2O3-doped ZnO(AZO) films were deposited on the glasses by means of RF magnetron sputtering technology. The films were characterized by scanning electron microscope (SEM), X-ray diffraction (XRD) and Profile-system respectively. The effect of substrate temperature on the structure of the AZO films is investigated.As a result, the properties of the AZO thin films are remarkably influenced by the substrate temperature , especially in the range of 200°C to 500 °C. The film prepared at the substrate temperature of 400°C possesses the best crystalline.

The Influence of Zirconia Substrate Temperature on the Microstructure and Adhesion of Deposited Mg Films

2012 ◽  
Vol 472-475 ◽  
pp. 2834-2838
Author(s):  
Fei Xiong Mao ◽  
Tao Liu ◽  
Shi Wei Liu ◽  
Jing Kun Yu
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Substrate Temperature ◽  
Hexagonal Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Adhesion Performance ◽  
Substrate Temperatures ◽  
Scanning Electron

Mg films were prepared by magnetron sputtering on zirconia substrate. The surface morphology, structure and adhesion performance were determined by scanning electron microscopy (SEM), X-ray diffraction (XRD) and automatic nano scratch tester, respectively. The results show that the Mg films deposited on the substrates at 50 °C, 200 °C, 300 °C are mainly of hexagonal phase with the crystal planes (002) in highly preferred orientation that is weaken with the substrate temperature increased. After annealed at 230 °C, the quality of thin film deposited on the substrate at 50 °C can be improved as crystallizability enhanced and grain size increased. The adhesion of Mg film increases firstly, and then decreases with increasing the substrate temperatures.

Aqueous-based synthesis of gallium tungsten oxide thin film dielectrics

2015 ◽  
Vol 3 (13) ◽  
pp. 3114-3120 ◽  
Author(s):  
Richard P. Oleksak ◽  
William F. Stickle ◽  
Gregory S. Herman
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Tungsten Oxide ◽  
Metal Content ◽  
Fine Tuning ◽  
Oxide Thin Film ◽  
Tungsten Oxide Thin Films ◽  
Thin Film Dielectrics ◽  
Dielectric And Optical Properties ◽  
Film Dielectric

Gallium tungsten oxide thin films formed from a single aqueous precursor. The highly controllable metal content allowed for fine-tuning of film dielectric and optical properties.

Mimicking the Formation of Biomineral Composites through Deposition of Calcium Carbonate Thin-Films on Modified Fiber Net Templates

2003 ◽  
Vol 774 ◽  
Author(s):  
Parayil Kumaran Ajikumar ◽  
Rajamani Lakshminarayanan ◽  
Valiyaveettil Suresh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Calcium Carbonate ◽  
Scanning Electron Microscope ◽  
X Ray Diffraction ◽  
X Ray ◽  
Controlled Deposition ◽  
Scanning Electron

AbstractThin films of calcium carbonate were deposited on the surfaces of synthetic substrates using a simple biomimetic pathway. The Nylon 66 fiber knit pre-adsorbed with acidic polymers was used as a template for the controlled deposition of CaCO3 thin film. The presence of the soluble macromolecules on the fiber knit surface was characterized using ATR-FTIR spectroscopy. The characterization of the mineral films was carried out using scanning electron microscope (SEM), X-ray diffraction (XRD) and energy dispersive Xray scattering (EDX) studies.

Electrical Properties Dependence on Substrate Temperature of Sputtered ZnO Nanoparticles Thin Films on Teflon Substrates

2013 ◽  
Vol 795 ◽  
pp. 403-406 ◽  
Author(s):  
Nur Sa’adah Muhamad Sauki ◽  
Sukreen Hana Herman ◽  
Mohd Hanafi Ani ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage

Zinc oxide (ZnO) thin films were deposited on teflon substrates by RF magnetron sputtering at different substrate temperature. The effect of substrate temperature on ZnO thin films electrical and structural properties were examined using current-voltage (I-V) measurement, and x-ray diffraction (XRD) It was found that the electrical conductivity and resistivity of the ZnO thin film deposited at 40°C was the highest and lowest intensity accordingly. This was supported by the crystalline quality of the films from the x-ray diffraction (XRD) results. The XRD pattern showed that the ZnO thin film deposited at 40°C has the highest intensity with the narrowest full-width-at-half-maximum indicating that the film has the highest quality compared to other thin film.

Effect of Substrate Temperature on the Structural and Electrochromic Properties of Mo Doped WO3 Thin Films

2014 ◽  
Vol 781 ◽  
pp. 95-106 ◽  
Author(s):  
V. Madhavi ◽  
P. Kondaiah ◽  
S. Uthanna
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Substrate Temperature ◽  
Electrochromic Property ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrochromic Properties ◽  
Substrate Temperatures ◽  
Scanning Electron

Thin films of Mo (1.3 at.%) doped WO3 films were deposited on glass and ITO coated glass substrates held at substrate temperatures in the range 473 673 K by RF magnetron sputtering technique. The effect of substrate temperature on the structural and morphological, and electrochromic properties of the deposited films were investigated by X-ray diffraction, scanning electron microscope, Raman spectroscope and with electrochemical cell. X-ray diffraction profiles showed that the films formed at substrate temperature of 473 K consisted of weak (020) reflection related to the orthorhombic phase of WO3 in the amorphous matrix. The films formed at substrate temperatures 473 K were of polycrystalline in nature. The crystallite size of the films increased from 12 to 43 nm with increase of substrate temperature from 473 to 673 K. The scanning electron microscope images of the films formed at 473 K showed the leaf like structure with grain size of 1.2 μm. When substrate temperature increased to 573 K the size of the grains enhanced to 2.4 μm. Raman spectra of the films confirmed the presence of characteristic vibration modes of W = O, W - O - W and O - W - O. The optical band gap of the films increased with increase of substrate temperature. The electrochromic property, that is the color efficiency increased from 42.5 to 50.5 cm2/C with the increase of substrate temperature from 473 to 673 K respectively. The structural and electrochromic properties of the Mo doped WO3 films will be correlated with the substrate temperature maintained during growth of the films.

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