Investigation of sodium insertion into tetracyanoquinodimethane (TCNQ): results for a TCNQ thin film obtained by a surface science approach

Tetracyanoquinodimethane (TCNQ) was exposed to sodium vapour resulting in three phases containing reduced TCNQ with different electronic structures and chemical compositions.

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Fabrication and Photoelectrochemical Characterization of Fe, Co, Ni and Cu-Doped TiO2 Thin Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.764.266 ◽

2013 ◽

Vol 764 ◽

pp. 266-283 ◽

Cited By ~ 8

Author(s):

Ibram Ganesh ◽

Rekha Dom ◽

P.H. Borse ◽

Ibram Annapoorna ◽

G. Padmanabham ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Metal Ions ◽

Band Gap ◽

Metal Ion ◽

Band Gap Energy ◽

Chemical Compositions ◽

Gap Energy ◽

Glass Substrates ◽

Photoelectrochemical Characterization

Different amounts of Fe, Co, Ni and Cu-doped TiO2 thin films were prepared on fluorine doped tin oxide (FTO) coated soda-lime glass substrates by following a conventional sol-gel dip-coating technique followed by heat treatment at 550 and 600°C for 30 min. These thin films were characterized for photo-current, chronoamperometry and band-gap energy values. The chemical compositions of metals-doped TiO2 thin films on FTO glass substrates were confirmed by XPS spectroscopic study. The metal-ions doped TiO2 thin films had a thickness of <200 nm="" optical="" transparency="" of="">80%, band-gap energy of >3.6 eV, and a direct band-to-band energy transition. The photoelectrochemical (PEC) studies revealed that all the metal-ions doped TiO2 thin films exhibit n-type semi-conducting behavior with a quite stable chronoamperometry and photo-currents that increase with the increase of applied voltage but decrease with the dopant metal-ion concentration in the thin film. Furthermore, these thin films exhibited flat-band potentials amenable to water oxidation reaction in a PEC cell. The 0.5 wt.% Cu-doped TiO2 thin film electrode exhibited an highest incident photon-to-current conversion efficiency (IPCE) of about 21%.

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Atomic and electronic structures at ZnO and ZrO2 interface for transparent thin-film transistors

physica status solidi (a) ◽

10.1002/pssa.200983756 ◽

2010 ◽

Vol 207 (7) ◽

pp. 1731-1734 ◽

Cited By ~ 14

Author(s):

S. J. Wang ◽

T. I. Wong ◽

Q. Chen ◽

M. Yang ◽

L. M. Wong ◽

...

Keyword(s):

Thin Film ◽

Electronic Structures ◽

Thin Film Transistors

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A Systematical Study on Photocatalytic Properties of AgMO2 (M = Al, Ga, In): Effects of Chemical Compositions, Crystal Structures, and Electronic Structures

The Journal of Physical Chemistry C ◽

10.1021/jp806513t ◽

2009 ◽

Vol 113 (4) ◽

pp. 1560-1566 ◽

Cited By ~ 111

Author(s):

Shuxin Ouyang ◽

Naoki Kikugawa ◽

Di Chen ◽

Zhigang Zou ◽

Jinhua Ye

Keyword(s):

Crystal Structures ◽

Electronic Structures ◽

Photocatalytic Properties ◽

Chemical Compositions

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ChemInform Abstract: Catalytic Reactions and Reactors: A Surface Science Approach

ChemInform ◽

10.1002/chin.199219339 ◽

2010 ◽

Vol 23 (19) ◽

pp. no-no

Author(s):

L. K. DORAISWAMY

Keyword(s):

Surface Science ◽

Catalytic Reactions ◽

Science Approach

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Spectroscopic studies of the passive film on alkali and alkaline earth metals in non-aqueous solvents: A surface science approach: Final report

10.2172/5554162 ◽

1987 ◽

Author(s):

D. Scherson ◽

G. Chottiner ◽

P. Herrara-Fierro ◽

Xuekun Xing

Keyword(s):

Surface Science ◽

Passive Film ◽

Alkaline Earth ◽

Spectroscopic Studies ◽

Alkaline Earth Metals ◽

Final Report ◽

Science Approach

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Interfacial electronic structures at Fe/pentacene/Fe interfaces

Diamond Light Source Proceedings ◽

10.1017/s2044820111000049 ◽

2011 ◽

Vol 1 (SRMS-7) ◽

Author(s):

Yu-Zhan Wang ◽

Xing-Yu Gao ◽

Andrew Wee ◽

Dong-Chen Qi ◽

Shi Chen

Keyword(s):

Thin Film ◽

Binding Energy ◽

Chemical Reaction ◽

Electronic Structures ◽

Hole Injection ◽

Photoemission Spectroscopy ◽

Core Hole ◽

Band Bending ◽

Screening Effect ◽

Injection Barrier

We investigate the interfacial electronic structures of the heterojunction Fe/pentacene/Fe on Cu(100) substrate, using synchrotron-based photoemission spectroscopy. No chemical reaction is observed at either Fe/pentacene or pentacene/Fe interface. The hole injection barrier was estimated to be about 0.95 eV between pentacene and under the Fe thin film. C K-edge NEXAFS revealed that the long axis of pentacene molecule was almost perpendicular to the surface plane. With increasing Fe thickness deposited on pentacene film, the pentacene's HOMO shifts to higher binding energy whereas the C 1s binding energy showed an interesting unusual behaviour due to the initial band bending gradually suppressed by the increasing core-hole screening effect.

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