Comparison of Device Characteristics Between Transition-Metal Dichalcogenide and 2-D Silicon Single-Layer Field-Effect Transistors

2017 ◽  
Vol 67 (10) ◽  
pp. 1200-1204
Author(s):  
Tae Kyun YOO ◽  
Shin Ae HWANG ◽  
Moon Gyu JANG*
Keyword(s):  
Transition Metal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Layer ◽  
Transition Metal Dichalcogenide

First principles studies on electronic and contact properties of Single layer 2H-MoS2/1T'-MX2 heterojunctions

2022 ◽  
Author(s):  
Jiao Yu ◽  
Caijuan Xia ◽  
Zhengyang Hu ◽  
jianping Sun ◽  
Xiaopeng Hao ◽  
...  
Keyword(s):  
Transition Metal ◽  
First Principles ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Layer ◽  
Metal Chalcogenides ◽  
Two Dimensional ◽  
Transition Metal Chalcogenides

With in-plane heterojunction contacts between semiconducting 2H phase (as channel) and the metallic 1T' phase (as electrode), the two-dimensional (2D) transition metal chalcogenides (TMDs) field-effect transistors (FETs) have received much...

Gap state distribution and Fermi level pinning in monolayer to multilayer MoS2 field effect transistors

Nanoscale ◽  
2020 ◽  
Vol 12 (16) ◽  
pp. 8883-8889 ◽  
Author(s):  
Ronen Dagan ◽  
Yonatan Vaknin ◽  
Yossi Rosenwaks
Keyword(s):  
Transition Metal ◽  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Surface ◽  
Volume Ratio ◽  
Transition Metal Dichalcogenide ◽  
State Distribution ◽  
Fermi Level Pinning ◽  
Gap States

Gap states and Fermi level pinning play an important role in all semiconductor devices, but even more in transition metal dichalcogenide-based devices due to their high surface to volume ratio and the absence of intralayer dangling bonds.

Tuning Transition-Metal Dichalcogenide Field-Effect Transistors by Spontaneous Pattern Formation of an Ultrathin Molecular Dopant Film

ACS Nano ◽  
2018 ◽  
Vol 12 (10) ◽  
pp. 10123-10129 ◽  
Author(s):  
Hisashi Ichimiya ◽  
Masahiro Takinoue ◽  
Akito Fukui ◽  
Kohei Miura ◽  
Takeshi Yoshimura ◽  
...  
Keyword(s):  
Pattern Formation ◽  
Transition Metal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenide

Explicit continuous I-V model for 2D transition metal dichalcogenide field-effect transistors

2019 ◽  
Vol 88 ◽  
pp. 61-66
Author(s):  
L.F. Deng ◽  
C.M. Si ◽  
H.Q. Huang ◽  
J. Wang ◽  
H. Wen ◽  
...  
Keyword(s):  
Transition Metal ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transition Metal Dichalcogenide

scholarly journals Schottky Barrier Height and Image Force Lowering in Monolayer MoS2 Field Effect Transistors

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2346
Author(s):  
Yonatan Vaknin ◽  
Ronen Dagan ◽  
Yossi Rosenwaks
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Field Effect ◽  
Schottky Barrier Height ◽  
Field Effect Transistors ◽  
Single Layer ◽  
Image Force ◽  
Transition Metal Dichalcogenide ◽  
Metal Interface ◽  
Effect Transistor

Understanding the nature of the barrier height in a two-dimensional semiconductor/metal interface is an important step for embedding layered materials in future electronic devices. We present direct measurement of the Schottky barrier height and its lowering in the transition metal dichalcogenide (TMD)/metal interface of a field effect transistor. It is found that the barrier height at the gold/ single-layer molybdenum disulfide (MoS2) interfaces decreases with increasing drain voltage, and this lowering reaches 0.5–1 V We also show that increase of the gate voltage induces additional barrier lowering.

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