Improved electrochromic performance of a radio frequency magnetron sputtered NiO thin film with high optical switching speed

A nickel oxide (NiO) thin film with better reversibility, high optical modulation, and enhanced coloration efficiency with fast switching time was prepared using radio frequency (rf) magnetron sputtering technique.

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High coloration efficiency and fast switching speed of poly(amic acid-imide)s containing triphenylamine in acidic electrolyte

RSC Advances ◽

10.1039/c4ra12970a ◽

2015 ◽

Vol 5 (15) ◽

pp. 11071-11076 ◽

Cited By ~ 25

Author(s):

Yanqiu Wang ◽

Yu Liang ◽

Jiaying Zhu ◽

Xuduo Bai ◽

Xiankai Jiang ◽

...

Keyword(s):

Switching Time ◽

Amic Acid ◽

Switching Speed ◽

Coloration Efficiency ◽

Fast Switching ◽

Acidic Electrolyte ◽

Fast Switching Speed

The PAA-IM-1 film showed excellent reversible electrochromic stability and short switching time in acidic electrolyte (MBSA).

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The direct growth of a WO3 nanosheet array on a transparent conducting substrate for highly efficient electrochromic and electrocatalytic applications

CrystEngComm ◽

10.1039/c4ce00404c ◽

2014 ◽

Vol 16 (30) ◽

pp. 6866-6872 ◽

Cited By ~ 42

Author(s):

Guo-fa Cai ◽

Jiang-ping Tu ◽

Ding Zhou ◽

Lu Li ◽

Jia-heng Zhang ◽

...

Keyword(s):

Cycling Performance ◽

Optical Modulation ◽

Switching Speed ◽

Coloration Efficiency ◽

Fast Switching ◽

Nanosheet Array ◽

Transparent Conducting ◽

Direct Growth ◽

Vertically Aligned ◽

Fast Switching Speed

Vertically aligned WO3 nanosheet films are produced via a hydrothermal method. The WO3 nanosheet films exhibit significant optical modulation, fast switching speed, high coloration efficiency and excellent cycling performance. Outstanding electrocatalysis is also achieved by the films.

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Development of a highly transparent, low-resistance lithium-doped nickel oxide triple-layer film deposited by magnetron sputtering

Chemical Communications ◽

10.1039/c6cc08738h ◽

2017 ◽

Vol 53 (10) ◽

pp. 1634-1637 ◽

Cited By ~ 8

Author(s):

Chia-Ching Wu ◽

Wei-Chen Shih

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Nickel Oxide ◽

Transparent Conductive Oxide ◽

Rf Magnetron Sputtering ◽

Oxide Thin Film ◽

Glass Substrates ◽

Triple Layer ◽

Conductive Oxide

This research presents a triple-layer transparent conductive oxide thin film, with a lithium-doped nickel oxide/silver/lithium-doped nickel oxide (L-NiO/Ag/L-NiO) structure using radio-frequency (RF) magnetron sputtering on glass substrates.

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Growth of Highly (112) Oriented Cu2ZnSnS4 Thin Film on Sapphire Substrate by Radio Frequency Magnetron Sputtering

MRS Proceedings ◽

10.1557/opl.2014.405 ◽

2014 ◽

Vol 1640 ◽

Author(s):

Ning Song ◽

Xiaojing Hao ◽

Binesh Puthen-Veettil ◽

Shujuan Huang ◽

Martin A Green

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Structural Investigation ◽

Rf Magnetron Sputtering ◽

Structural Quality ◽

Radio Frequency Magnetron Sputtering ◽

Deposition Parameters ◽

Cu2znsns4 Thin Film ◽

Czts Thin Films

ABSTRACTFor structural investigation, highly (112) oriented tetragonal Cu2ZnSnS4 (CZTS) thin films on hexagonal sapphire (0001) single crystal substrates were obtained by radio frequency (RF) magnetron sputtering. The influences of the deposition parameters, such as substrate temperature (Tsub) and working Ar pressure (PAr) on the chemical composition and structural properties of as deposited CZTS films were investigated. The film sputtered at 500°C has the only orientation of (112), also, it bears the best structural quality with pure CZTS phase and an estimated band gap of 1.51eV.

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Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density

Materials ◽

10.3390/ma12193236 ◽

2019 ◽

Vol 12 (19) ◽

pp. 3236

Author(s):

Kurasaki ◽

Tanaka ◽

Sugisaki ◽

Matsuda ◽

Koretomo ◽

...

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Oxygen Vacancies ◽

Lower Layer ◽

Rf Magnetron Sputtering ◽

Double Layers ◽

Thin Film Device ◽

Oxygen Ratio

We have found a memristive characteristic of an amorphous Ga-Sn-O (α-GTO) thin-film device with double layers of different oxygen density. The double layers are deposited using radio frequency (RF) magnetron sputtering, whose gas for the lower layer contains less oxygen, whereas that for the upper layer contains more oxygen, and it is assumed that the former contains more oxygen vacancies, whereas the latter contains fewer vacancies. The characteristic is explained by drift of oxygen and is stable without forming operation because additional structures such as filament are unnecessary. The fabrication is easy because the double layers are successively deposited simply by changing the oxygen ratio in the chamber.

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