scholarly journals Reliable resistive switching memory based on oxygen-vacancy-controlled bilayer structures

RSC Advances ◽  
2016 ◽  
Vol 6 (26) ◽  
pp. 21736-21741 ◽  
Author(s):  
Kyuhyun Park ◽  
Jang-Sik Lee
Keyword(s):  
Oxygen Vacancy ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Atomic Layer ◽  
Resistive Switching Memory ◽  
Layer Deposition ◽  
Aluminum Oxide Layer ◽  
Switching Memory

Reliable resistive switching memory devices were developed by controlling the oxygen vacancies in aluminum oxide layer during atomic layer deposition and by adopting bilayer structures.

Atomic Layer Deposition of TiOx/Al2O3Bilayer Structures for Resistive Switching Memory Applications

2014 ◽  
Vol 20 (7-8-9) ◽  
pp. 282-290 ◽  
Author(s):  
Hehe Zhang ◽  
Nabeel Aslam ◽  
Marcel Reiners ◽  
Rainer Waser ◽  
Susanne Hoffmann-Eifert
Keyword(s):  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Resistive Switching Memory ◽  
Layer Deposition ◽  
Memory Applications ◽  
Switching Memory

SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory

2019 ◽  
Vol 114 (18) ◽  
pp. 182102 ◽  
Author(s):  
Chandreswar Mahata ◽  
Min-Hwi Kim ◽  
Suhyun Bang ◽  
Tae-Hyeon Kim ◽  
Dong Keun Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Sio2 Layer ◽  
Resistive Switching Memory ◽  
Layer Deposition ◽  
Layer Effect ◽  
Switching Memory

In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications

2017 ◽  
Vol 9 (15) ◽  
pp. 13286-13292 ◽  
Author(s):  
Konstantin V. Egorov ◽  
Dmitry S. Kuzmichev ◽  
Pavel S. Chizhov ◽  
Yuri Yu. Lebedinskii ◽  
Cheol Seong Hwang ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Oxygen Vacancies ◽  
Atomic Layer ◽  
Resistive Switching Memory ◽  
Layer Deposition ◽  
In Situ Control ◽  
Memory Applications ◽  
Switching Memory

In situcontrol of oxygen vacancies in TiO2by atomic layer deposition for resistive switching devices

2013 ◽  
Vol 24 (29) ◽  
pp. 295202 ◽  
Author(s):  
Sang-Joon Park ◽  
Jeong-Pyo Lee ◽  
Jong Shik Jang ◽  
Hyun Rhu ◽  
Hyunung Yu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Switching Devices
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