High Performance Flexible Organic Field-Effect Transistors with Barium Strontium Titanate Gate Dielectric Deposited at Room Temperature

2020 ◽  
Vol 2 (2) ◽  
pp. 529-536
Author(s):  
Vivek Raghuwanshi ◽  
Deepak Bharti ◽  
Ajay Kumar Mahato ◽  
Amit Kumar Shringi ◽  
Ishan Varun ◽  
...  
Keyword(s):  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Field Effect ◽  
High Performance ◽  
Room Temperature ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Barium Strontium

High performance room temperature ferroelectric barium strontium titanate ceramics by spark-plasma-sintering ultrafine nanocrystals

2019 ◽  
Vol 45 (12) ◽  
pp. 15526-15531 ◽  
Author(s):  
Yunling Zhai ◽  
Xiong Xie ◽  
Rui Zhou ◽  
Xu Li ◽  
Xinxin Liu ◽  
...  
Keyword(s):  
Spark Plasma Sintering ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
High Performance ◽  
Room Temperature ◽  
Barium Strontium ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
Titanate Ceramics

Low temperature cross-linked, high performance polymer gate dielectrics for solution-processed organic field-effect transistors

2015 ◽  
Vol 6 (32) ◽  
pp. 5884-5890 ◽  
Author(s):  
Shengxia Li ◽  
Linrun Feng ◽  
Jiaqing Zhao ◽  
Xiaojun Guo ◽  
Qing Zhang
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Cross Linking ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
High Performance Polymer

Thermal cross-linking the bi-functional polymer thin-films at low temperature for gate dielectric application in solution processed organic field-effect transistors.

scholarly journals Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors

2018 ◽  
Vol 9 (1) ◽  
pp. 2 ◽  
Author(s):  
Sooji Nam ◽  
Yong Jeong ◽  
Joo Kim ◽  
Hansol Yang ◽  
Jaeyoung Jang
Keyword(s):  
Graphene Oxide ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Operating Voltage ◽  
Organic Field Effect Transistors ◽  
Gate Leakage

Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS—a hydrophobic polymer—onto the top surface of GO. The GO/PS gate dielectric shows reduced surface roughness and gate leakage while maintaining a high capacitance of 37.8 nF cm−2. The resulting OFETs show high-performance operation with a high mobility of 1.05 cm2 V−1 s−1 within a low operating voltage of −5 V.

Critical Impact of Gate Dielectric Interfaces on the Contact Resistance of High-Performance Organic Field-Effect Transistors

2013 ◽  
Vol 117 (23) ◽  
pp. 12337-12345 ◽  
Author(s):  
Chuan Liu ◽  
Yong Xu ◽  
Yun Li ◽  
William Scheideler ◽  
Takeo Minari
Keyword(s):  
Contact Resistance ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Dielectric Interfaces

High-Performance Ambipolar Pentacene Organic Field-Effect Transistors on Poly(vinyl alcohol) Organic Gate Dielectric

2005 ◽  
Vol 17 (19) ◽  
pp. 2315-2320 ◽  
Author(s):  
Th. B. Singh ◽  
F. Meghdadi ◽  
S. Günes ◽  
N. Marjanovic ◽  
G. Horowitz ◽  
...  
Keyword(s):  
Vinyl Alcohol ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Poly Vinyl Alcohol ◽  
Organic Field Effect Transistors

High performance organic field-effect transistors with fluoropolymer gate dielectric

2007 ◽  
Author(s):  
Wolfgang L. Kalb ◽  
Thomas Mathis ◽  
Simon Haas ◽  
Arno F. Stassen ◽  
Bertram Batlogg
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

scholarly journals Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates

RSC Advances ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 3169-3175 ◽  
Author(s):  
Han Sol Back ◽  
Min Je Kim ◽  
Jeong Ju Baek ◽  
Do Hwan Kim ◽  
Gyojic Shin ◽  
...  
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Logic Gates ◽  
Organic Field Effect Transistors ◽  
High Quality ◽  
Complementary Inverters

We fabricated a high-quality perhydropolysilazane (PHPS)-derived SiO2 film by intense pulsed UV irradiation and applied it as a gate dielectric layer in high-performance organic field-effect transistors (OFETs) and complementary inverters.

The effect of gate dielectric deposition at different vacuum conditions on the field-effect mobility of pentacene based organic field effect transistors

2017 ◽  
Vol 636 ◽  
pp. 485-489 ◽  
Author(s):  
Sajal Biring ◽  
Ya-Ze Li ◽  
Chih-Chien Lee ◽  
Arvind Pan ◽  
Yan-De Li ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Field Effect Mobility
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