Room temperature NH3 detection of Ti/graphene devices promoted by visible light illumination

2017 ◽  
Vol 5 (5) ◽  
pp. 1113-1120 ◽  
Author(s):  
Min Zhao ◽  
Lanqin Yan ◽  
Xianfeng Zhang ◽  
Lihua Xu ◽  
Zhiwei Song ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Visible Light ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Light Illumination ◽  
Visible Light Illumination ◽  
Grown Graphene ◽  
Graphene Devices

3, 5 and 10 nm thick Ti decorated chemical-vapor-deposition (CVD) grown graphene devices (Ti/Gr) for NH3 detection were fabricated, and their sensing performances were great promoted by visible light illumination.

scholarly journals Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper

2015 ◽  
Vol 1 (6) ◽  
pp. e1500222 ◽  
Author(s):  
Luca Banszerus ◽  
Michael Schmitz ◽  
Stephan Engels ◽  
Jan Dauber ◽  
Martin Oellers ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Copper Substrate ◽  
High Mobility ◽  
Chemical Vapor ◽  
Magnetic Field Sensors ◽  
Exfoliated Graphene ◽  
Cost Efficient ◽  
Grown Graphene ◽  
Graphene Devices

Graphene research has prospered impressively in the past few years, and promising applications such as high-frequency transistors, magnetic field sensors, and flexible optoelectronics are just waiting for a scalable and cost-efficient fabrication technology to produce high-mobility graphene. Although significant progress has been made in chemical vapor deposition (CVD) and epitaxial growth of graphene, the carrier mobility obtained with these techniques is still significantly lower than what is achieved using exfoliated graphene. We show that the quality of CVD-grown graphene depends critically on the used transfer process, and we report on an advanced transfer technique that allows both reusing the copper substrate of the CVD growth and making devices with mobilities as high as 350,000 cm2V–1s–1, thus rivaling exfoliated graphene.

Extraordinary magnetoresistance in shunted chemical vapor deposition grown graphene devices

2011 ◽  
Vol 99 (2) ◽  
pp. 022108 ◽  
Author(s):  
Adam L. Friedman ◽  
Jeremy T. Robinson ◽  
F. Keith Perkins ◽  
Paul M. Campbell
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Extraordinary Magnetoresistance ◽  
Grown Graphene ◽  
Graphene Devices

Superior characteristics of graphene field effect transistor enclosed by chemical-vapor-deposition-grown hexagonal boron nitride

2014 ◽  
Vol 2 (37) ◽  
pp. 7776-7784 ◽  
Author(s):  
Muhammad Waqas Iqbal ◽  
Muhammad Zahir Iqbal ◽  
Xiaozhan Jin ◽  
Jonghwa Eom ◽  
Chanyong Hwang
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Grown Graphene ◽  
Graphene Devices

We report the characterization of high-quality chemical-vapor-deposition (CVD)-grown graphene devices on CVD-grown hexagonal boron nitride (h-BN).

scholarly journals Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition

2021 ◽  
Vol 7 (16) ◽  
pp. eabf7358
Author(s):  
Meng Peng ◽  
Runzhang Xie ◽  
Zhen Wang ◽  
Peng Wang ◽  
Fang Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Spectral Response ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Infrared Detection ◽  
Infrared Photodetectors ◽  
Bandgap Semiconductors ◽  
Low Dimensional

Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition. The low-dimensional Te shows high hole mobility and broadband detection. The blackbody-sensitive infrared detection of Te devices was demonstrated. A high responsivity of 6650 A W−1 (at 1550-nm laser) and the blackbody responsivity of 5.19 A W−1 were achieved. High-resolution imaging based on Te photodetectors was successfully obtained. All the results suggest that the chemical vapor deposition–grown low-dimensional Te is one of the competitive candidates for sensitive focal-plane-array infrared photodetectors at room temperature.

Room temperature observation of the correlation between atomic and electronic structure of graphene on Cu(110)

RSC Advances ◽  
2016 ◽  
Vol 6 (100) ◽  
pp. 98001-98009 ◽  
Author(s):  
Thais Chagas ◽  
Thiago H. R. Cunha ◽  
Matheus J. S. Matos ◽  
Diogo D. dos Reis ◽  
Karolline A. S. Araujo ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Chemical Vapor Deposition ◽  
Scanning Tunneling Microscopy ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Temperature Observation ◽  
Atomic And Electronic Structure

We have used atomically-resolved scanning tunneling microscopy and spectroscopy to study the interplay between the atomic and electronic structure of graphene formed on copper via chemical vapor deposition.

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