Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper

Graphene research has prospered impressively in the past few years, and promising applications such as high-frequency transistors, magnetic field sensors, and flexible optoelectronics are just waiting for a scalable and cost-efficient fabrication technology to produce high-mobility graphene. Although significant progress has been made in chemical vapor deposition (CVD) and epitaxial growth of graphene, the carrier mobility obtained with these techniques is still significantly lower than what is achieved using exfoliated graphene. We show that the quality of CVD-grown graphene depends critically on the used transfer process, and we report on an advanced transfer technique that allows both reusing the copper substrate of the CVD growth and making devices with mobilities as high as 350,000 cm2V–1s–1, thus rivaling exfoliated graphene.

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Room temperature NH3 detection of Ti/graphene devices promoted by visible light illumination

Journal of Materials Chemistry C ◽

10.1039/c6tc04416f ◽

2017 ◽

Vol 5 (5) ◽

pp. 1113-1120 ◽

Cited By ~ 13

Author(s):

Min Zhao ◽

Lanqin Yan ◽

Xianfeng Zhang ◽

Lihua Xu ◽

Zhiwei Song ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Visible Light ◽

Vapor Deposition ◽

Room Temperature ◽

Chemical Vapor ◽

Light Illumination ◽

Visible Light Illumination ◽

Grown Graphene ◽

Graphene Devices

3, 5 and 10 nm thick Ti decorated chemical-vapor-deposition (CVD) grown graphene devices (Ti/Gr) for NH3 detection were fabricated, and their sensing performances were great promoted by visible light illumination.

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Low-Temperature Chemical Vapor Deposition Growth of Graphene Layers on Copper Substrate Using Camphor Precursor

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2020.18862 ◽

2020 ◽

Vol 20 (12) ◽

pp. 7698-7704

Author(s):

K. Kavitha ◽

Akanksha R. Urade ◽

Gurjinder Kaur ◽

Indranil Lahiri

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Graphene Layer ◽

Copper Substrate ◽

Chemical Vapor ◽

Large Area ◽

Chemical Vapor Deposition Growth ◽

Graphene Layers ◽

Grown Graphene

A two-step, low-temperature thermal chemical vapor deposition (CVD) process, which uses camphor for synthesizing continuous graphene layer on Cu substrate is reported. The growth process was performed at lower temperature (800 °C) using camphor as the source of carbon. A threezone CVD system was used for controlled heating of precursor, in order to obtain uniform graphene layer. As-grown samples were characterized by X-ray diffraction (XRD), Raman spectroscopy and transmission electron microscopy (TEM). The results show the presence of 4–5 layers of graphene. As-grown graphene transferred onto a glass substrate through a polymer-free wet-etching process, demonstrated transmittance ~91% in visible spectra. This process of synthesizing large area, 4–5 layer graphene at reduced temperature represents an energy-efficient method of producing graphene for possible applications in opto-electronic industry.

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Evolution of Cu Surface Morphology and its Effect on Graphene Synthesized by Chemical Vapor Deposition

Advances in Science and Technology ◽

10.4028/www.scientific.net/ast.95.17 ◽

2014 ◽

Vol 95 ◽

pp. 17-22 ◽

Cited By ~ 2

Author(s):

Ahmed Ibrahim ◽

A. Owais ◽

M. Atieh ◽

R. Karnik ◽

Tahar Laoui

Keyword(s):

Chemical Vapor Deposition ◽

Surface Morphology ◽

Vapor Deposition ◽

Substrate Surface ◽

Copper Substrate ◽

Chemical Vapor ◽

Synthesis Process ◽

Graphene Growth ◽

Graphene Synthesis ◽

Grown Graphene

Chemical Vapor Deposition (CVD) is generally utilized for producing large area, good quality graphene films on suitable substrates. Copper (Cu) substrate is used mainly as a substrate and catalyst during graphene synthesis process by CVD method. The purpose of the present work is to investigate the evolution of Cu surface morphology after graphene growth and its influence on grown graphene quality. In this study, graphene was grown using methane as the carbon source at temperature 1040 °C for 5 minutes. Scanning electron microscopy (SEM), Optical Microscopy (OM) and atomic force microscopy (AFM) were utilized to analyze the change of Cu surface morphology after graphene synthesis. Raman spectroscopy was used to characterize the characteristics of grown graphene. SEM and AFM results showed that copper substrate surface morphology was modified after graphene growth associated by formation of large size Cu particles located basically on the surface terraces, resulting in deposition of multilayer, very small graphene domains aligned linearly along rolling marks direction.

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Extraordinary magnetoresistance in shunted chemical vapor deposition grown graphene devices

Applied Physics Letters ◽

10.1063/1.3610565 ◽

2011 ◽

Vol 99 (2) ◽

pp. 022108 ◽

Cited By ~ 13

Author(s):

Adam L. Friedman ◽

Jeremy T. Robinson ◽

F. Keith Perkins ◽

Paul M. Campbell

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Extraordinary Magnetoresistance ◽

Grown Graphene ◽

Graphene Devices

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Optoelectronic properties of graphene-MoS2 hybrid

MRS Proceedings ◽

10.1557/opl.2013.477 ◽

2013 ◽

Vol 1505 ◽

Cited By ~ 2

Author(s):

Medini Padmanabhan ◽

Kallol Roy ◽

Srijit Goswami ◽

T. Phanindra Sai ◽

Gopalakrishnan Ramalingam ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electrical Response ◽

Chemical Vapor ◽

Layered Materials ◽

Strong Function ◽

Exfoliated Graphene ◽

Device Architecture ◽

Graphene Flakes ◽

Grown Graphene

ABSTRACTUltra-thin flakes of layered materials have recently been attracting widespread research interest due to their exotic properties. In this work, we study the optoelectronic response of a hybrid of two such materials – graphene and MoS2. Our devices consist of mechanically exfoliated graphene flakes transferred on top of similarly exfoliated MoS2. The electrical response of the hybrid is studied in the presence of white light. We show that the four-point resistance of graphene is modulated in the presence of light. This effect is observed to be a strong function of gate voltage. We have also extended our studies to CVD (chemical vapor deposition) - grown graphene transferred onto MoS2 which show qualitatively similar features, thereby attesting to the scalability of the device architecture.

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